Thermal annealing effects on electrical properties of Ir/Ru Schottky contacts on n-InGaN

2013 ◽  
Author(s):  
R. Padma ◽  
B. Prasanna lakshmi ◽  
V. Rajagopal Reddy
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Schottky Contacts ◽  
Annealing Effects

Thermal annealing effects on structural, optical and electrical properties of V2O5 nanorods for photodiode application

Optik ◽  
2018 ◽  
Vol 157 ◽  
pp. 410-420 ◽  
Author(s):  
M. Sethu Raman ◽  
N. Senthil kumar ◽  
J. Chandrasekaran ◽  
R. Priya ◽  
P. Baraneedharan ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Optical And Electrical Properties ◽  
Annealing Effects

scholarly journals Thermal Annealing Effects on the Electrical and Structural Properties of Ni/Pt Schottky Contacts on the Quaternary AlInGaN Epilayer

2018 ◽  
Vol 48 (2) ◽  
pp. 887-897 ◽  
Author(s):  
Engin Arslan ◽  
Şemsettin Altındal ◽  
Sertaç Ural ◽  
Ömer A. Kayal ◽  
Mustafa Öztürk ◽  
...  
Keyword(s):  
Structural Properties ◽  
Thermal Annealing ◽  
Schottky Contacts ◽  
Annealing Effects

The Microstructure of ZrN/GaAs Schottky Contacts and its Correlation with Electrical Properties.

1991 ◽  
Vol 240 ◽  
Author(s):  
Prashant Phatak ◽  
Mitsuru Imaizumi ◽  
E. R. Weber ◽  
N. Newman ◽  
Z. Liliental-Weber
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Treatment ◽  
Schottky Contacts ◽  
High Resolution Tem ◽  
Thermal Annealing Treatment ◽  
Effect Transistor ◽  
Abrupt Interface ◽  
Rapid Thermal Annealing Treatment

ABSTRACTThe self-aligned GaAs metal-semiconductor field-effect transistor technology requires that the gate material maintains a good rectifying contact with the GaAs substrate when subjected to high-temperature annealing around 800–900° C. ZrN Schottky contacts to GaAs were previously shown to have excellent electrical properties at high tempratures. An increase of barrier height and a decrease in the reverse breakdown voltage with rapid thermal annealing at temperatures up to 900° C has been observed. The ideality factor increases after rapid thermal annealing at 900° C.In an attempt to explain the above observations, we investigated the interface structure of such contacts under as-deposited and annealed conditions. By high resolution TEM it was found that the interface of as-deposited samples is fairly flat but protrusions form after rapid thermal annealing treatment at 850 and 900° C. The selected area diffraction analysis shows the presence of ZrO2 near the interface.It is therefore likely that protrusions are the cause of the degradation of electrical properties of the contacts. These protrusions may be caused by the presence of a residual oxide layer before deposition. Indeed, a deposition of ZrN after sputter cleaning the substrates before deposition procedure resulted in an abrupt interface even after annealing at 900° C.

Rapid thermal annealing effects on electrical and structural properties of Pd/Au Schottky contacts to n-type InP(111)

2008 ◽  
Vol 206 (2) ◽  
pp. 250-255 ◽  
Author(s):  
M. Bhaskar Reddy ◽  
V. Janardhanam ◽  
A. Ashok Kumar ◽  
V. Rajagopal Reddy ◽  
P. Narasimha Reddy
Keyword(s):  
Structural Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Contacts ◽  
Annealing Effects
Sign in / Sign up

Export Citation Format

Share Document