Spin split-off band-based high operating temperature IR detectors in 3-5 µm and beyond

2010 ◽  
Author(s):  
A. G. U. Perera ◽  
S. G. Matsik ◽  
M. S. Shishodia ◽  
R. C. Jayasinghe ◽  
P. K. D. D. P. Pitigala
Keyword(s):  
Operating Temperature ◽  
Ir Detectors ◽  
High Operating Temperature

Status of IR detectors for high operating temperature produced by MOVPE growth of MCT on GaAs substrates

2012 ◽  
Author(s):  
P. Knowles ◽  
L. Hipwood ◽  
N. Shorrocks ◽  
I. M. Baker ◽  
L. Pillans ◽  
...  
Keyword(s):  
Operating Temperature ◽  
Ir Detectors ◽  
High Operating Temperature ◽  
Gaas Substrates ◽  
Movpe Growth

New IR detectors with small pixel pitch and high operating temperature

2010 ◽  
Author(s):  
David Billon-Lanfrey ◽  
Philippe Trinolet ◽  
Frédéric Pistone ◽  
Laurent Rubaldo ◽  
Hubert Huet
Keyword(s):  
Operating Temperature ◽  
Ir Detectors ◽  
High Operating Temperature ◽  
Pixel Pitch ◽  
Small Pixel

Improved high operating temperature MCT MWIR modules

2014 ◽  
Author(s):  
H. Lutz ◽  
R. Breiter ◽  
H. Figgemeier ◽  
T. Schallenberg ◽  
W. Schirmacher ◽  
...  
Keyword(s):  
Operating Temperature ◽  
High Operating Temperature

GaAs and GaN based high operating temperature spin split-off band infrared detectors

2010 ◽  
Author(s):  
A. G. Unil Perera ◽  
S. G. Matsik ◽  
M. S. Shishodia ◽  
R. C. Jayasinghe
Keyword(s):  
Infrared Detectors ◽  
Operating Temperature ◽  
High Operating Temperature

Mid-wavelength high operating temperature barrier infrared detector and focal plane array

2018 ◽  
Vol 113 (2) ◽  
pp. 021101 ◽  
Author(s):  
David Z. Ting ◽  
Alexander Soibel ◽  
Arezou Khoshakhlagh ◽  
Sir B. Rafol ◽  
Sam A. Keo ◽  
...  
Keyword(s):  
Focal Plane ◽  
Operating Temperature ◽  
Infrared Detector ◽  
Focal Plane Array ◽  
High Operating Temperature

Microstructure stability of TLPS interconnects in high operating temperature applications

2017 ◽  
Vol 2017 (HiTEN) ◽  
pp. 000226-000233
Author(s):  
Catherine Shearer
Keyword(s):  
Operating Temperature ◽  
Failure Mechanisms ◽  
Intermetallic Phases ◽  
Liquid Phase Sintering ◽  
Interfacial Structure ◽  
High Operating Temperature ◽  
Thermal Work ◽  
Operating Temperatures ◽  
High Lead ◽  
Temperature Applications

Abstract Interconnect materials for high operating temperature applications are becoming a limiting factor within the chain of materials. While materials such as capacitor dielectrics, semiconductor platforms (e.g. SiC), and baseplate materials (e.g. SiN composites) have paved a pathway to deploying electronics in high operating temperature applications, interconnect materials are a clearly identified weak link. As is often the case in advancements in technology, the materials technologies that were the bottlenecks to advancement give way to new solutions that create new bottlenecks in the material supply chain. Rather than a fluid march towards advancements in new frontiers in electronics, the high operating temperature sphere, like much of advanced electronic, suffers from a ‘slip-fault’ mode of development where advances occur in one segment while others lag behind creating drag on implementation. For high operating temperature applications the available interconnect solutions are becoming the jarring stop to the smooth tectonic shift. Current solutions are diverse: high-lead, gold-based, and nano-sintering and its hybrids, but none are ideal. Even disregarding he toxicity of lead and the ongoing limbo of its regulatory status, the operating temperatures of the high-lead solders are on the low end of the requirements for future harsh environment electronics applications; whereas, the gold and nano-based alternatives have significant cost barriers - either at from the constituent materials perspective or the required investment in new processes. There is also the concern about the assessment of the action of nanomaterials in the waste stream due to their fundamentally different surface reactivity in a variety of situations. Reliance on conventional, solder-type interconnection structures, regardless of composition, introduces the perennial problem of the growth of the interfacial phases due to the essentially unlimited volume of the bulk solder material. The changes in the interfacial structure with additional thermal work - as is provided by high operating temperature applications - creates an environment that is ripe for growth of a variety of failure mechanisms. These failure mechanisms are often related to the uncontrolled laminar growth of intermetallic phases at the interfaces and the mechanical characteristics of these intermetallic phases in comparison with the materials joined and the bulk constituent material of the solder. An alternative class of interconnect materials, transient liquid phase sintering (TLPS) pastes, introduce a joint microstructure that is homogeneous throughout. The interfacial metallurgical reactions with the solderable surfaces are fundamentally similar to those that occur throughout the bulk of the joint. A reactant metal is included in the composition. This reactant metal, most often copper, reacts with and converts the bulk tin in the bulk of the solder interconnect to alloy structures with melting points well above the operating temperatures currently contemplated. At the conclusion of the joining process, which is generally a near drop-in for existing solder reflow processes, there is no large source of unreacted metal (e.g. Sn) that can continue to drive major microstructural changes with the continued thermal work provided by the application environment. For this reason the joints are homogeneous and do not have the free reactants necessary to drive substantial changes in joint morphology during cycling and use conditions. In this paper, we will explore the differences between TLPS joints and solder-type joints with the anticipated thermal work that would be introduced in a high operating temperature environment.

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