Surface Emission And Band-Bending In Shallow Junction GaAs LEDs As Affected By Type Of Gas And Pressure

1987 ◽  
Author(s):  
S. Hava
Keyword(s):  
Band Bending ◽  
Shallow Junction ◽  
Surface Emission

Tire Treadwear — A Comprehensive Evaluation of the Factors: Generic Type, Aspect Ratio, Tread Pattern, and Tread Composition Part IV: Laboratory Measurement of Mechanical Properties and Mechanical Actions of Tires Relating to Treadwear

1986 ◽  
Vol 14 (4) ◽  
pp. 264-291
Author(s):  
K. L. Oblizajek ◽  
A. G. Veith
Keyword(s):  
Mechanical Properties ◽  
Shear Stress ◽  
Contact Zone ◽  
Flexural Rigidity ◽  
Comprehensive Evaluation ◽  
Shear Stiffness ◽  
Shear Stresses ◽  
Lateral Shear ◽  
Band Bending ◽  
Tread Rubber

Abstract Treadwear is explained by specific mechanical properties and actions of tires. Rubber shear stresses in the contact zone between the tire and the road become large at large slip angles. When normal stresses are insufficient to prevent sliding at the rear of the footprint, wear occurs at a rate that depends on test severity. Two experimental approaches are described to relate treadwear to tire characteristics. The first uses transducers imbedded in a simulated road surface to obtain direct measurements of contact stresses on the loaded, freely-rolling, steered tires. The second approach is developed with the aid of a simple carcass, tread-band, tread-rubber tire model. Various tire structural configurations; characterized by carcass spring rate, edgewise flexural band stiffness, and tread rubber shear stiffness; are simulated and lateral shear stress response in the contact zone is determined. Tires featuring high band stiffness and low carcass stiffness generate lower lateral shear stress levels. Furthermore, coupling of tread-rubber stiffness and band flexural rigidity are important in determining level of shear stresses. Laboratory measurements with the described apparatus produced values of tread-band bending and carcass lateral stiffness for several tire constructions. Good correlation is shown between treadwear and a broad range of tire stiffness and test course severities.

Failure Analysis of Vertical Cavity Surface Emission Laser Diodes

2003 ◽  
Author(s):  
F. Siegelin ◽  
C. Brillert
Keyword(s):  
Failure Analysis ◽  
Complete Analysis ◽  
Cavity Surface ◽  
Dislocation Network ◽  
Plan View ◽  
Surface Emission ◽  
Optical Output ◽  
Vertical Cavity Surface ◽  
Vcsel Arrays ◽  
Vertical Cavity

Abstract A failure analysis case study for oxide confined vertical cavity surface emitting laser (VCSEL) arrays will be presented. The focus of this work is on devices failing with a reduced optical output due to a rapid degradation of the laser diode. The complete analysis flow will be shown, including electrical and optical characterization as well as detailed investigations on a nanometer scale. It is known that these fails are caused by dislocations. An advanced FIB preparation method enabled cross-section and plan view TEM to successfully visualize the complete extent of a dislocation network.

Dendritic Growth Failure of a Mesa Diode

1997 ◽  
Author(s):  
P. Singh ◽  
V. Cozzolino ◽  
G. Galyon ◽  
R. Logan ◽  
K. Troccia ◽  
...  
Keyword(s):  
Electric Fields ◽  
Dendritic Growth ◽  
Silicon Oxide ◽  
Impact Ionization ◽  
Electron Tunneling ◽  
Growth Failure ◽  
Side Wall ◽  
Oxide Interface ◽  
Band Bending ◽  
Cross Section Area

Abstract The time delayed failure of a mesa diode is explained on the basis of dendritic growth on the oxide passivated diode side walls. Lead dendrites nucleated at the p+ side Pb-Sn solder metallization and grew towards the n side metallization. The infinitesimal cross section area of the dendrites was not sufficient to allow them to directly affect the electrical behavior of the high voltage power diodes. However, the electric fields associated with the dendrites caused sharp band bending near the silicon-oxide interface leading to electron tunneling across the band gap at velocities high enough to cause impact ionization and ultimately the avalanche breakdown of the diode. Damage was confined to a narrow path on the diode side wall because of the limited influence of the electric field associated with the dendrite. The paper presents experimental details that led to the discovery of the dendrites. The observed failures are explained in the context of classical semiconductor physics and electrochemistry.

Laser thermal processing for shallow junction and silicide formation

1998 ◽  
Author(s):  
Somit Talwar ◽  
Gaurav Verma ◽  
Kurt H. Weiner ◽  
Carol Gelatos
Keyword(s):  
Thermal Processing ◽  
Silicide Formation ◽  
Shallow Junction ◽  
Laser Thermal Processing

Screening and band bending effects in the Stark control of electrons at interfaces (SCELI)

2021 ◽  
Vol 103 (23) ◽  
Author(s):  
Antonio J. Garzón-Ramírez ◽  
Francisco Fernández Villoria ◽  
Ignacio Franco
Keyword(s):  
Band Bending

Fermi level pinning and band bending in δ-doped BaSnO3

2021 ◽  
Vol 118 (5) ◽  
pp. 052101
Author(s):  
Youjung Kim ◽  
Hyeongmin Cho ◽  
Kookrin Char
Keyword(s):  
Fermi Level ◽  
Band Bending ◽  
Fermi Level Pinning

Nano-scale Depth Profiles of Electrical Properties of Phosphorus Doped Silicon for Ultra-Shallow Junction Evaluation

2021 ◽  
pp. 1-1
Author(s):  
Hung-Yuan Chang ◽  
Yew-Chung Sermon Wu ◽  
Chia-He Chang ◽  
Kun-Lin Lin ◽  
Abhijeet Joshi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Shallow Junction ◽  
Depth Profiles ◽  
Nano Scale ◽  
Doped Silicon ◽  
Phosphorus Doped

scholarly journals Influence of surface band bending on a narrow band gap semiconductor: Tunneling atomic force studies of graphite with Bernal and rhombohedral stacking orders

2021 ◽  
Vol 5 (4) ◽  
Author(s):  
Regina Ariskina ◽  
Michael Schnedler ◽  
Pablo D. Esquinazi ◽  
Ana Champi ◽  
Markus Stiller ◽  
...  
Keyword(s):  
Band Gap ◽  
Narrow Band ◽  
Surface Band ◽  
Band Bending ◽  
Atomic Force

Using point defect engineering to reduce the effects of energy nonmonochromaticity of B ion beams on shallow junction formation

2004 ◽  
Vol 96 (1) ◽  
pp. 919-921 ◽  
Author(s):  
Lin Shao ◽  
John Chen ◽  
Jianming Zhang ◽  
D. Tang ◽  
Sanjay Patel ◽  
...  
Keyword(s):  
Point Defect ◽  
Ion Beams ◽  
Defect Engineering ◽  
Shallow Junction ◽  
Junction Formation
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