Using point defect engineering to reduce the effects of energy nonmonochromaticity of B ion beams on shallow junction formation

2004 ◽  
Vol 96 (1) ◽  
pp. 919-921 ◽  
Author(s):  
Lin Shao ◽  
John Chen ◽  
Jianming Zhang ◽  
D. Tang ◽  
Sanjay Patel ◽  
...  
Keyword(s):  
Point Defect ◽  
Ion Beams ◽  
Defect Engineering ◽  
Shallow Junction ◽  
Junction Formation

Ultra-shallow junction formation by Point Defect Engineering

2002 ◽  
Author(s):  
Wei-Kan Chu Wei-Kan Chu ◽  
Lin Shao Lin Shao ◽  
J. Liu ◽  
P.E. Thompson ◽  
X. Wang ◽  
...  
Keyword(s):  
Point Defect ◽  
Defect Engineering ◽  
Shallow Junction ◽  
Junction Formation

Point Defect Engineering and Its Application in Shallow Junction Formation

2002 ◽  
Vol 5 (10) ◽  
pp. G93 ◽  
Author(s):  
Lin Shao ◽  
J. R. Liu ◽  
P. E. Thompson ◽  
X. M. Wang ◽  
I. Rusakova ◽  
...  
Keyword(s):  
Point Defect ◽  
Defect Engineering ◽  
Shallow Junction ◽  
Junction Formation

Ultrashallow junction formation by point defect engineering

2004 ◽  
Vol 22 (1) ◽  
pp. 302 ◽  
Author(s):  
Lin Shao ◽  
Phillip E. Thompson ◽  
P. A. W. van der Heide ◽  
Sanjay Patel ◽  
Quak. Y. Chen ◽  
...  
Keyword(s):  
Point Defect ◽  
Defect Engineering ◽  
Junction Formation ◽  
Ultrashallow Junction

Point Defect Engineering Applied to Shallow Junction ULSI Processing

1989 ◽  
Vol 147 ◽  
Author(s):  
George A. Rozgonyi ◽  
J. W. Honeycutt
Keyword(s):  
Point Defect ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Defect Engineering ◽  
Process Technology ◽  
Plan View ◽  
Dopant Activation ◽  
Qualitative Understanding ◽  
Junction Formation ◽  
Induced Defects

AbstractWe describe how a simple qualitative understanding of the interfacial reactions occurring during typical ULSI processes for junction formation, dopant activation, and contact silicidation can be used to eliminate end-of-range interstitial dislocation loops and beneficially impact the diffusion of dopants. Following a brief discussion of the well-documented effects of oxidation and nitridation on extended defects and dopant diffusion, conditions for elimination of implantation-induced defects are specified. Cross-section and plan-view TEM along with angle lapping and chemical etching of implanted and diffused junctions are presented to illustrate the application of point defect engineering to process technology.

Shallow junction formation by preamorphization with tin implantation

1986 ◽  
Vol 49 (10) ◽  
pp. 575-577 ◽  
Author(s):  
M. Delfino ◽  
D. K. Sadana ◽  
A. E. Morgan
Keyword(s):  
Shallow Junction ◽  
Junction Formation
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