Investigation By Transmission Electron Microscopy Of The Al-SiO 2 Thin-Film Reaction Induced By in-situ Rapid Thermal Processing

1990 ◽  
Author(s):  
V. Baranauskas
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Transmission Electron

Factors affecting Ge nanocrystal size in co-sputtered Ge+SiO2films

2000 ◽  
Vol 638 ◽  
Author(s):  
WK Choi ◽  
V Ng ◽  
YW Ho ◽  
TB Chen ◽  
V Ho
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Annealing Duration ◽  
Factors Affecting ◽  
Transmission Electron ◽  
Germanium Nanocrystals ◽  
Ge Nanocrystals

AbstractThe high resolution transmission electron microscopy and Raman spectroscopy results of germanium nanocrystals embedded in SiO2 synthesized by rapid thermal processing (RTA) have been presented. From the results of samples with different Ge concentrations, it was concluded that there is a narrow window in the Ge concentration that can produce nanocrystals. We also showed that it is possible to vary RTA duration or temperature to produce Ge nanocrystals with varying sizes. Our results therefore suggest that it is possible to utilize (i) annealing duration and; (ii) temperature to tune crystal sizes for optoelectronic applications.

Metastable Phases and the Molecular Beam Epitaxy of Metal Silicides

1987 ◽  
Vol 104 ◽  
Author(s):  
J. M. Gibson
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Interface Energy ◽  
Metastable Phases ◽  
Transmission Electron ◽  
Metal Silicides

ABSTRACTThe growth of the epitaxial silicides NiSi2 and CoSi2 on Si is discussed from observations made by in-situ transmission electron microscopy. In particular, we observe the occurrence of epitaxial metastable phases which arise from the dominance of interface energy in extremely thin films. Such phases relate to the thickness dependence of the microstructure in these silicides and may be expected to occur in many binary and more complex thin film systems.

Finite element modeling of stress variation in multilayer thin-film specimens for in situ transmission electron microscopy experiments

2007 ◽  
Vol 22 (10) ◽  
pp. 2737-2741 ◽  
Author(s):  
H. Mei ◽  
J.H. An ◽  
R. Huang ◽  
P.J. Ferreira
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Finite Element Method ◽  
Transmission Electron Microscopy ◽  
Finite Element ◽  
Residual Stresses ◽  
Multilayer Thin Film ◽  
Stress Variation ◽  
Transmission Electron

Multilayer thin-film materials with various thicknesses, compositions, and deposition methods for each layer typically exhibit residual stresses. In situ transmission electron microscopy (TEM) is a powerful technique that has been used to determine correlations between residual stresses and the microstructure. However, to produce electron transparent specimens for TEM, one or more layers of the film are sacrificed, thus altering the state of stresses. By conducting a stress analysis of multilayer thin-film TEM specimens, using a finite element method, we show that the film stresses can be considerably altered after TEM sample preparation. The stress state depends on the geometry and the interactions among multiple layers.

scholarly journals Nanocrystal Diffusion in a Liquid Thin Film Observed by in Situ Transmission Electron Microscopy

Nano Letters ◽  
2009 ◽  
Vol 9 (6) ◽  
pp. 2460-2465 ◽  
Author(s):  
Haimei Zheng ◽  
Shelley A. Claridge ◽  
Andrew M. Minor ◽  
A. Paul Alivisatos ◽  
Ulrich Dahmen
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Transmission Electron

Lateral Reactions of Gaas with Ni Studied by Transmission Electron Microscopy

1985 ◽  
Vol 54 ◽  
Author(s):  
S. H. Chen ◽  
C. B. Carter ◽  
C. J. Palmstrøm ◽  
T. Ohashi
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Annealing Temperature ◽  
Lateral Diffusion ◽  
Diffusion Couples ◽  
Product Phase ◽  
Transmission Electron ◽  
Good Agreement

ABSTRACTA new method has been developed for making self-supporting, thin films which can be used for the in situ study, by hot-stage, transmission electron microscopy, of the reaction between Ni and GaAs. The thin-film, lateral diffusion-couples have been used to study both the kinetics and the formation of new phases. The growth rate of the ternary compound, N2GaAs showed a parabolic time dependence. At an annealing temperature of 300*C, the present experimental results show that Ni is the diffusing species and that the Ga and As remain essentially immobile. Diffusion coefficients obtained by this method are in very good agreement with those which have been obtained using conventional thin-film techniques. The results of this new technique are particularly important in view of the difficulty in identifying the composition of the product phase by methods which do not have the same lateral resolution.

Comparative Studies of Thin-Film Ti-Si and Ti-SiO2 Rapid Thermal Reactions Using the RIP/TEM Technique

1986 ◽  
Vol 74 ◽  
Author(s):  
Menachem Natan
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thermal Processing ◽  
Metal Film ◽  
Rapid Thermal Processing ◽  
Nucleation And Growth ◽  
Thin Metal Film ◽  
Processing Temperature ◽  
Thermal Reactions ◽  
Transmission Electron

AbstractOne requirement of self-aligned microelectronics metallization processes is selectivity of reactions, e.g., a deposited, thin metal film must react with Si to form a silicide, yet avoid reaction with SiO2 Rapid thermal processing (RTP) techniques may enhance selectivity by utiliz-ing differences in competing reaction kinetics. In this paper, we apply the RTP/transmission electron microscopy (RTP/TEM) technique to determine processing temperature (T)/time (t) “win-dows” for selective sulicide formation in Ti-Si vs Ti-SiO2 reactions. Free-lying Si/Ti/Si and SiO2/Ti/SiO2 films deposited on electron microscope grids were RTP'd in pairs and immediately examined by TEM. The products of the interfacial reactions, their sequence of appearance, and the T/t conditions for silicide nucleation and growth in each system are described.

Thermal Stability of Atomic Layer Deposited Zr:Al Mixed Oxide Thin Films: An in Situ Transmission Electron Microscopy Study

2005 ◽  
Vol 20 (7) ◽  
pp. 1741-1750
Author(s):  
L.C. Nistor ◽  
O. Richard ◽  
C. Zhao ◽  
H. Bender ◽  
G. Van Tendeloo
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Thermal Stability ◽  
Transmission Electron Microscopy ◽  
Atomic Layer ◽  
Silicon Surfaces ◽  
Transmission Electron ◽  
Thermal Stability Of

The thermal stability of amorphous Zr:Al mixed oxide films of different composition, produced on (001) silicon wafers by the atomic layer deposition method is studied by transmission electron microscopy during in situ heating experiments. The temperatures at which phase separation and crystallization occur are composition dependent. The crystallization of thick films (55–70 nm), deposited on HF-treated silicon surfaces covered with a 15 cycles Al2O3 layer, results in the formation of cubic ZrO2 and cubic γ–Al2O3. In very thin films (5 nm), deposited on silicon surfaces covered with a 0.5 nm SiO2 thin film, the formation of tetragonal zirconium disilicide (ZrSi2) is observed in the microscope vacuum, at temperatures above 900 °C. This effect depends on the thickness of the as deposited thin film.

scholarly journals Damage and recovery induced by a high energy e-beam in a silicon nanofilm

RSC Advances ◽  
2017 ◽  
Vol 7 (59) ◽  
pp. 37032-37038 ◽  
Author(s):  
Xianlin Qu ◽  
Qingsong Deng
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
High Energy ◽  
Silicon Thin Film ◽  
Transmission Electron

Herein, electron beam-induced damage and recovery of a silicon thin film was investigatedin situ viatransmission electron microscopy (TEM).

Sign in / Sign up

Export Citation Format

Share Document