Comparative Studies of Thin-Film Ti-Si and Ti-SiO2 Rapid Thermal Reactions Using the RIP/TEM Technique

1986 ◽  
Vol 74 ◽  
Author(s):  
Menachem Natan
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thermal Processing ◽  
Metal Film ◽  
Rapid Thermal Processing ◽  
Nucleation And Growth ◽  
Thin Metal Film ◽  
Processing Temperature ◽  
Thermal Reactions ◽  
Transmission Electron

AbstractOne requirement of self-aligned microelectronics metallization processes is selectivity of reactions, e.g., a deposited, thin metal film must react with Si to form a silicide, yet avoid reaction with SiO2 Rapid thermal processing (RTP) techniques may enhance selectivity by utiliz-ing differences in competing reaction kinetics. In this paper, we apply the RTP/transmission electron microscopy (RTP/TEM) technique to determine processing temperature (T)/time (t) “win-dows” for selective sulicide formation in Ti-Si vs Ti-SiO2 reactions. Free-lying Si/Ti/Si and SiO2/Ti/SiO2 films deposited on electron microscope grids were RTP'd in pairs and immediately examined by TEM. The products of the interfacial reactions, their sequence of appearance, and the T/t conditions for silicide nucleation and growth in each system are described.

Factors affecting Ge nanocrystal size in co-sputtered Ge+SiO2films

2000 ◽  
Vol 638 ◽  
Author(s):  
WK Choi ◽  
V Ng ◽  
YW Ho ◽  
TB Chen ◽  
V Ho
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Annealing Duration ◽  
Factors Affecting ◽  
Transmission Electron ◽  
Germanium Nanocrystals ◽  
Ge Nanocrystals

AbstractThe high resolution transmission electron microscopy and Raman spectroscopy results of germanium nanocrystals embedded in SiO2 synthesized by rapid thermal processing (RTA) have been presented. From the results of samples with different Ge concentrations, it was concluded that there is a narrow window in the Ge concentration that can produce nanocrystals. We also showed that it is possible to vary RTA duration or temperature to produce Ge nanocrystals with varying sizes. Our results therefore suggest that it is possible to utilize (i) annealing duration and; (ii) temperature to tune crystal sizes for optoelectronic applications.

Effect of Rapid Thermal Processing on the Crystallization Properties of PbTiO3 Ferroelectric Thin Film

1996 ◽  
Vol 433 ◽  
Author(s):  
Jianguo Zhu ◽  
Meng Chen ◽  
Wenbing Peng ◽  
Fahua Lan ◽  
E.V. Sviridov ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Processing ◽  
Interfacial Layer ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Rapid Thermal Processing ◽  
Ferroelectric Thin Film ◽  
Processing Temperature ◽  
Time Duration

AbstractThe fabrication methods of ferroelectric (FE) thin films have received special attention in recent years because of the needs of FE thin films integrated with semiconductor devices. Rapid thermal processing (RTP) has developed in fabrication of FE thin films because it can reduce processing temperature and time duration, and it also improves the properties of FE thin films compatible with semiconductor devices. The thin film samples used were prepared by a multi-ion-beam reactive cosputtering system (MIBRECS) at room temperature. The samples were then subjected to a post-deposition annealing in a RTP system. It was found that PbTiO3 (PT) thin film could grow on amorphous or polycrystal interfacial layer and the PT thin films annealed by RTP showed the prefered [110] and [100] textures. The effect of interfacial layer on the crystallization and microstructure of the films was also discussed.

Disordering and Ordering in a Severely Deformed FePd Alloy

2011 ◽  
Vol 172-174 ◽  
pp. 703-708 ◽  
Author(s):  
Abdelahad Chbihi ◽  
Xavier Sauvage ◽  
Cécile Genevois ◽  
Didier Blavette ◽  
Dmitriy Gunderov ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Long Range ◽  
High Pressure Torsion ◽  
Domain Size ◽  
Nucleation And Growth ◽  
Processing Temperature ◽  
Ordered Structure ◽  
Transmission Electron ◽  
Deformed State ◽  
Lower Temperature

A Fe50Pd50alloy was severely deformed by High Pressure Torsion (HPT). For a processing temperature ranging from 20°C to 300°C, the Severe Plastic Deformation (SPD) induces a significant grain size reduction (in a range of 50 to 150 nm) but also a strong disordering of the long range ordered L10phase. However, Transmission Electron Microscopy (TEM) data clearly show that few ordered nanocrystals remain in the deformed state. The deformed material was annealed to achieve a nanoscaled long range ordered structure. The transformation proceeds via the nucleation and growth of ordered domains along grain boundaries. Aging at lower temperature (400°C) gives rise to a smallest domain size and thus the highest coercivity.

Transmission Electron Microscopy of oriented Co84Cr14Ta2 thin films for longitudinal magnetic recording

1991 ◽  
Vol 49 ◽  
pp. 756-757
Author(s):  
T. P. Nolan
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Cost ◽  
Low Noise ◽  
Information Storage ◽  
High Coercivity ◽  
Magnetic Alloy ◽  
Magnetic Media ◽  
Transmission Electron

Thin film magnetic media are being used as low cost, high density forms of information storage. The development of this technology requires the study, at the sub-micron level, of morphological, crystallographic, and magnetic properties, throughout the depth of the deposited films. As the microstructure becomes increasingly fine, widi grain sizes approaching 100Å, the unique characterization capabilities of transmission electron microscopy (TEM) have become indispensable to the analysis of such thin film magnetic media.Films were deposited at 225°C, on two NiP plated Al substrates, one polished, and one circumferentially textured with a mean roughness of 55Å. Three layers, a 750Å chromium underlayer, a 600Å layer of magnetic alloy of composition Co84Cr14Ta2, and a 300Å amorphous carbon overcoat were then sputter deposited using a dc magnetron system at a power of 1kW, in a chamber evacuated below 10-6 torr and filled to 12μm Ar pressure. The textured medium is presently used in industry owing to its high coercivity, Hc, and relatively low noise. One important feature is that the coercivity in the circumferential read/write direction is significandy higher than that in the radial direction.

Some early history of replica techniques for electron microscopy

1992 ◽  
Vol 50 (2) ◽  
pp. 1076-1077
Author(s):  
Robert M. Fisher
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Optical Microscope ◽  
Early History ◽  
Bulk Materials ◽  
Thin Sections ◽  
Transmission Electron ◽  
Reflected Light ◽  
History Of ◽  
Electron Microscopes

By 1940, a half dozen or so commercial or home-built transmission electron microscopes were in use for studies of the ultrastructure of matter. These operated at 30-60 kV and most pioneering microscopists were preoccupied with their search for electron transparent substrates to support dispersions of particulates or bacteria for TEM examination and did not contemplate studies of bulk materials. Metallurgist H. Mahl and other physical scientists, accustomed to examining etched, deformed or machined specimens by reflected light in the optical microscope, were also highly motivated to capitalize on the superior resolution of the electron microscope. Mahl originated several methods of preparing thin oxide or lacquer impressions of surfaces that were transparent in his 50 kV TEM. The utility of replication was recognized immediately and many variations on the theme, including two-step negative-positive replicas, soon appeared. Intense development of replica techniques slowed after 1955 but important advances still occur. The availability of 100 kV instruments, advent of thin film methods for metals and ceramics and microtoming of thin sections for biological specimens largely eliminated any need to resort to replicas.

Electron Microscopy Studies of The Chemistry And Microstructure of BaF2 / YBa2Cu3O7-x Thin Films

1994 ◽  
Vol 52 ◽  
pp. 796-797
Author(s):  
J. L. Lee ◽  
C. A. Weiss ◽  
R. A. Buhrman ◽  
J. Silcox
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Transmission Electron Microscope ◽  
Atomic Scale ◽  
Island Growth ◽  
Multilayer Systems ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Mgo Substrate

BaF2 thin films are being investigated as candidates for use in YBa2Cu3O7-x (YBCO) / BaF2 thin film multilayer systems, given the favorable dielectric properties of BaF2. In this study, the microstructural and chemical compatibility of BaF2 thin films with YBCO thin films is examined using transmission electron microscopy and microanalysis. The specimen was prepared by using laser ablation to first deposit an approximately 2500 Å thick (0 0 1) YBCO thin film onto a (0 0 1) MgO substrate. An approximately 7500 Å thick (0 0 1) BaF2 thin film was subsequendy thermally evaporated onto the YBCO film.Images from a VG HB501A UHV scanning transmission electron microscope (STEM) operating at 100 kV show that the thickness of the BaF2 film is rather uniform, with the BaF2/YBCO interface being quite flat. Relatively few intrinsic defects, such as hillocks and depressions, were evident in the BaF2 film. Moreover, the hillocks and depressions appear to be faceted along {111} planes, suggesting that the surface is smooth and well-ordered on an atomic scale and that an island growth mechanism is involved in the evolution of the BaF2 film.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

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