Optical Crossconnect Circuit With Intersecting Waveguides On InP Substrate

1989 ◽  
Author(s):  
M Erman ◽  
P. Jarry ◽  
H. Angenent ◽  
C. Graver ◽  
J. M. Auger ◽  
...  
Keyword(s):  
Optical Crossconnect ◽  
Inp Substrate

InP growth on ion-implanted InP substrate: a new method to achieve selective area MOVPE

1997 ◽  
Vol 170 (1-4) ◽  
pp. 655-660 ◽  
Author(s):  
A. Behres ◽  
H. Werner ◽  
A. Kohl ◽  
K. Heime
Keyword(s):  
New Method ◽  
Selective Area ◽  
Inp Substrate ◽  
Ion Implanted

1.3 [micro sign]m laser diodes with butt-jointed selectively grown spot-size converters uniformly fabricated on a 2 in InP substrate

1996 ◽  
Vol 32 (12) ◽  
pp. 1099 ◽  
Author(s):  
H. Okamoto ◽  
Y. Suzuki ◽  
Y. Tohmori ◽  
M. Okamoto ◽  
Y. Kondo ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Spot Size ◽  
Inp Substrate

Semi-insulating InP: Fe regrowth by the hydride VPE technique aroundp-InP substrate laser mesas fabricated by reactive ion etching

1991 ◽  
Vol 20 (12) ◽  
pp. 1025-1027 ◽  
Author(s):  
S. Lourdudoss ◽  
S. Nilsson ◽  
L. Bäckbom ◽  
T. Klinga ◽  
O. Kjebon ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
Inp Substrate

Improved reproducibility of AiGalnAs laser threshold by InP substrate deoxidation under phosphorous flux

1997 ◽  
Vol 26 (5) ◽  
pp. L9-L12 ◽  
Author(s):  
J. C. Harmand ◽  
E. Idiart-Alhor ◽  
J. M. Moison ◽  
F. Barthe
Keyword(s):  
Laser Threshold ◽  
Inp Substrate

Fabrication/Characterization of a Pseudomorphic Ga0.1In0.9P/InP MESFET

1993 ◽  
Vol 300 ◽  
Author(s):  
M. S. Feng ◽  
Y. M. Hsin ◽  
C. H. Wu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Energy Gap ◽  
Chemical Vapor ◽  
Drain Current ◽  
Low Pressure ◽  
Inp Substrate ◽  
Metalorganic Chemical

ABSTRACTA pseudomorphic Ga0.1In0.9P/InP MESFET grown by low pressure metalorganic chemical vapor deposition(LP-MOCVD) has been fabricated and characterized. The results indicated a transconductance of 66.7 ms/mm and a saturation drain current (Idss) of 55.6 mA have been achieved; furthermore, the Schottky barrier on InGaP as high as 0.67eV can be obtained using Pt2Si as the gate material. For comparison, a conventional InP MESFET with 5μm gate length has also been fabricated on InP epitaxial layer grown by low pressure metalorganic chemical vapor deposition on Fe-doped semi-insulating InP substrate. The transconductance and Idss were found to be 46.7 mS/mm and 43.1 mA at zero gate, respectively, for the depletion mode n-channel MESFET with Au as the gate metal; whereas, for the MESFET using Pt2Si as the gate metal, a transconductance of 40.3 mS/mm and a saturation drain current of 41.1 mA at zero gate bias have been obtained. The results indicated that Ga0.1In0.9P/lnP MESFET has better performance than InP MESFET because of higher energy gap of Ga0.1In0.9P.

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