Scanning Laser And Optical Beam Induced Current Methods For Failure Analysis Of Electronic Devices (#)

1989 ◽  
Author(s):  
Gaetano Grasso ◽  
Michele Muschitiello ◽  
Michele Stucchi ◽  
Enrico Zanoni
Keyword(s):  
Failure Analysis ◽  
Electronic Devices ◽  
Optical Beam ◽  
Scanning Laser ◽  
Induced Current ◽  
Optical Beam Induced Current

Hot Spots In 4H Sic P+N Diodes Studied By The Optical Beam Induced Current Technique

1998 ◽  
Vol 512 ◽  
Author(s):  
M. Frischholz ◽  
K. Nordgren ◽  
K. Rottner ◽  
J. Seidel ◽  
A. Schöner ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Leakage Current ◽  
High Voltage ◽  
Hot Spots ◽  
Operating Conditions ◽  
Optical Beam ◽  
Reverse Bias Voltage ◽  
Induced Current ◽  
Reverse Leakage Current ◽  
Optical Beam Induced Current

ABSTRACTThe optical beam induced current (OBIC) technique allows a direct imaging of high voltage PN junctions at a microscopic level under reverse operating conditions by measuring the local variation of the photocurrent. In this paper we focus on the application of the UV-OBIC technique for failure analysis of 4H SiC high voltage P+N diodes.4H SiC P+N diodes with a 2-zone junction termination extension were used. The diodes were characterized in terms of reverse leakage current and breakdown voltage. Various devices were chosen for failure analysis on the base of early breakdown and/or excessive leakage current for OBIC measurements to study extrinsic failures. As a reference we selected diodes that blocked more than 2 kV with a leakage current density of typically less than 0.1 μA/cm2.OBIC measurements have been used to detect failures in devices that manifest themselves as peaks or “hot spots” in the photocurrent distribution. Early breakdown of diodes could be attributed to formation of hot spots in the periphery of the diodes. The appearance of a hot spot preceded any noticeable increase in reverse leakage current and is thus a very sensitive tool to identify defective diodes already at low voltage levels.The photocurrent generated by illumination of hot spots has been measured as a function of reverse bias voltage and the current multiplication factor has been determined.

scholarly journals Interest of Using a Micro-Meter Spatial Resolution to Study SiC Semi-Conductor Devices by Optical Beam Induced Current (OBIC)

2020 ◽  
Vol 1004 ◽  
pp. 290-298
Author(s):  
Camille Sonneville ◽  
Dominique Planson ◽  
Luong Viet Phung ◽  
Pascal Bevilacqua ◽  
Besar Asllani
Keyword(s):  
Band Gap ◽  
Spatial Resolution ◽  
High Voltage ◽  
Test Bench ◽  
Wide Band ◽  
Optical Beam ◽  
Induced Current ◽  
Wide Band Gap ◽  
Optical Beam Induced Current

In this paper we present a new test bench called micro-OBIC used to characterized wide band gap semi-conductor. Micro-OBIC allows to get an Optical Beam Induced Current (OBIC) signal with a microscopic spatial resolution. We used micro-OBIC to characterize peripheral protection such as MESA, JTE or JTE in high voltage SiC device.

scholarly journals Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current

2015 ◽  
Vol 821-823 ◽  
pp. 223-228 ◽  
Author(s):  
Hassan Hamad ◽  
Christophe Raynaud ◽  
Pascal Bevilacqua ◽  
Sigo Scharnholz ◽  
Dominique Planson
Keyword(s):  
Temperature Dependence ◽  
Optical Beam ◽  
Induced Current ◽  
Power Devices ◽  
Multiplication Coefficient ◽  
Pn Junctions ◽  
Ionization Rates ◽  
Optical Beam Induced Current

The behavior of 4H-SiC power devices in severe environment with varying temperature is a key characteristic indicating their reliability. This paper shows the dependence of the ionization rates of 4H-SiC with respect to temperature. Optical Beam Induced Current (OBIC) measurements have been performed on PN junctions to determine the multiplication coefficient for temperature varying between 100 and 450K. That allows extracting the ionization rates by fitting the curves of multiplication coefficient.

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