Functional failure analysis on analog device by optical beam induced current technique

2002 ◽  
Author(s):  
K.T. Tan ◽  
S.H. Tan ◽  
S.H. Ong
Keyword(s):  
Failure Analysis ◽  
Optical Beam ◽  
Induced Current ◽  
Analog Device ◽  
Functional Failure ◽  
Current Technique ◽  
Optical Beam Induced Current

Detection of defects in metal interconnects by the nonbias-optical beam induced current technique

1999 ◽  
Vol 86 (11) ◽  
pp. 5949-5956 ◽  
Author(s):  
Tohru Koyama ◽  
Kenichiro Sonoda ◽  
Junko Komori ◽  
Yoji Mashiko ◽  
Masataka Umeno
Keyword(s):  
Optical Beam ◽  
Induced Current ◽  
Current Technique ◽  
Metal Interconnects ◽  
Optical Beam Induced Current ◽  
Detection Of Defects

Degradation Analysis of 2-$\mu\hbox{m}$ DFB Laser Using Optical Beam-Induced Current Technique

2007 ◽  
Vol 54 (10) ◽  
pp. 2644-2649 ◽  
Author(s):  
Tatsuya Takeshita ◽  
Tomonari Sato ◽  
Manabu Mitsuhara ◽  
Yasuhiro Kondo ◽  
Mitsuru Sugo ◽  
...  
Keyword(s):  
Optical Beam ◽  
Induced Current ◽  
Current Technique ◽  
Degradation Analysis ◽  
Dfb Laser ◽  
Optical Beam Induced Current

Hot Spots In 4H Sic P+N Diodes Studied By The Optical Beam Induced Current Technique

1998 ◽  
Vol 512 ◽  
Author(s):  
M. Frischholz ◽  
K. Nordgren ◽  
K. Rottner ◽  
J. Seidel ◽  
A. Schöner ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Leakage Current ◽  
High Voltage ◽  
Hot Spots ◽  
Operating Conditions ◽  
Optical Beam ◽  
Reverse Bias Voltage ◽  
Induced Current ◽  
Reverse Leakage Current ◽  
Optical Beam Induced Current

ABSTRACTThe optical beam induced current (OBIC) technique allows a direct imaging of high voltage PN junctions at a microscopic level under reverse operating conditions by measuring the local variation of the photocurrent. In this paper we focus on the application of the UV-OBIC technique for failure analysis of 4H SiC high voltage P+N diodes.4H SiC P+N diodes with a 2-zone junction termination extension were used. The diodes were characterized in terms of reverse leakage current and breakdown voltage. Various devices were chosen for failure analysis on the base of early breakdown and/or excessive leakage current for OBIC measurements to study extrinsic failures. As a reference we selected diodes that blocked more than 2 kV with a leakage current density of typically less than 0.1 μA/cm2.OBIC measurements have been used to detect failures in devices that manifest themselves as peaks or “hot spots” in the photocurrent distribution. Early breakdown of diodes could be attributed to formation of hot spots in the periphery of the diodes. The appearance of a hot spot preceded any noticeable increase in reverse leakage current and is thus a very sensitive tool to identify defective diodes already at low voltage levels.The photocurrent generated by illumination of hot spots has been measured as a function of reverse bias voltage and the current multiplication factor has been determined.

Erratum to “Degradation Analysis of 2 $\mu$m DFB Laser Using Optical Beam Induced Current Technique” [Oct 07 2644-2649]

2008 ◽  
Vol 55 (2) ◽  
pp. 701-701
Author(s):  
Tatsuya Takeshita ◽  
Tomonari Sato ◽  
Manabu Mitsuhara ◽  
Yasuhiro Kondo ◽  
Mitsuru Sugo ◽  
...  
Keyword(s):  
Optical Beam ◽  
Induced Current ◽  
Current Technique ◽  
Degradation Analysis ◽  
Dfb Laser ◽  
Optical Beam Induced Current
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