A Deep UV Imaging System For Lithography And Process Development

1988 ◽  
Author(s):  
Paul Michaloski ◽  
Paul Dewa
1996 ◽  
Vol 112 ◽  
pp. 431 ◽  
Author(s):  
Karen O'Neil ◽  
G. D. Bothun ◽  
Eric P. Smith ◽  
T. P. Stecher
Keyword(s):  
Deep Uv ◽  

2009 ◽  
Author(s):  
J.-L. Reverchon ◽  
S. Bansropun ◽  
J. A. Robo ◽  
J. P. Truffer ◽  
E. Costard ◽  
...  

Author(s):  
Steve Wang ◽  
Frederick Duewer ◽  
Shashidar Kamath ◽  
Christopher Kelly ◽  
Alan Lyon ◽  
...  

Abstract Xradia has developed a laboratory table-top transmission x-ray microscope, TXM 54-80, that uses 5.4 keV x-ray radiation to nondestructively image buried submicron structures in integrated circuits with at better than 80 nm 2D resolution. With an integrated tomographic imaging system, a series of x-ray projections through a full IC stack, which may include tens of micrometers of silicon substrate and several layers of Cu interconnects, can be collected and reconstructed to produce a 3D image of the IC structure at 100 nm resolution, thereby allowing the user to detect, localize, and characterize buried defects without having to conduct layer by layer deprocessing and inspection that are typical of conventional destructive failure analysis. In addition to being a powerful tool for both failure analysis and IC process development, the TXM may also facilitate or supplant investigations using scanning electron microscopy (SEM), transmission electron microscopy (TEM), and focused ion beam (FIB) tools, which generally require destructive sample preparation and a vacuum environment.


Author(s):  
Soheil Soltani ◽  
Ashkan Ojaghi ◽  
Adeboye O. Osunkoya ◽  
Francisco E. Robles

2012 ◽  
Vol 51 (12) ◽  
pp. 1982 ◽  
Author(s):  
René Reichle ◽  
Christof Pruss ◽  
Christopher Gessenhardt ◽  
Christof Schulz ◽  
Wolfgang Osten

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 641
Author(s):  
Jingqing Zhang ◽  
Yong Shang ◽  
Xuehang Li ◽  
Yali Dong ◽  
Yanling Pei

Synchronous measurement of full-field temperature and deformation at high temperature especially more than 1273 K is of much significance especially for part applications of turbine structures and materials. Non-contact optical methods attract more and more attention, however, current methods all face different challenges, such as strong light reflection on the surface of the specimen, disturbing radiation from environment, complex equipment setup, limited measured temperature not higher than 900 ℃ and so on. In this work, we develop an innovative technique to overcome some current problems. The measurement system employing an ultraviolet (UV) imaging system is composed of a scientific complementary metal oxide semiconductor (sCMOS) camera, a lens and a UV bandpass filter. The UV bandpass filter was used for thermal radiation elimination to acquire high quality images at elevated temperatures for deformation field calculation suitable for digital image correlation (DIC) method. The UV sensitive sCMOS camera without using active illumination was employed to collect enough UV radiation energy and eliminate the interference of the external ambient light, which is applicable for high accuracy temperature field measurement. Our system can realize the synchronous capture of image and temperature acquisition with passive UV imaging system at temperature not lower than 1473K. The feasibility of the method was verified through heating molybdenum (Mo) and Ni-based superalloy IC21 materials. The temperature fields of Mo measured by the established imaging system up to 1835 K with error less than 0.25% showed the effectiveness for temperature measurement. The estimated deformation and temperature field of Ni-based superalloy IC21 up to 1473 K with measured temperature error less than 0.5% demonstrated well the great potential of the UV imaging system in simultaneous measurement of temperature and deformation fields at elevated temperatures.


Author(s):  
J. P. Truffer ◽  
F. Semond ◽  
J. Y. Duboz ◽  
J. L. Reverchon ◽  
G. Lehoucq ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document