Comparison Among Multilayer Soft X-Ray Mirrors Fabricated By Electron Beam, Dc-, Rf-Magnetron Sputtering And Ion Beam Sputtering Deposition

1988 ◽  
Author(s):  
Shigetaro Ogura ◽  
Masahito Niibe ◽  
Yutaka Watanabe ◽  
Masami Hayashida ◽  
Takashi Iizuka
Keyword(s):  
Electron Beam ◽  
Magnetron Sputtering ◽  
Ion Beam ◽  
Rf Magnetron Sputtering ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
X Ray ◽  
Beam Sputtering

The Characterization of CIGS Thin Films Prepared by Ion Beam Sputtering Deposition from a Quaternary Target

2013 ◽  
Vol 734-737 ◽  
pp. 2545-2548
Author(s):  
Chao Ming Chen ◽  
Ping Fan ◽  
Guang Xing Liang ◽  
Zhuang Hao Zheng ◽  
Dong Ping Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Hall Effect Measurement ◽  
Beam Current ◽  
Chalcopyrite Structure ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
X Ray ◽  
Beam Sputtering ◽  
Beam Currents

This study reports the successful preparation of Cu (In, Ga)Se2(CIGS) thin film solar cells by ion beam sputtering with a chalcopyrite CIGS quaternary target. The films were fabricated with different beam currents. The thin films were characterized with X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM) and hall effect-measurement system to study the microstructures, composition, surface morphology and electrical properties, respectively. Experimental results show that both the films are chalcopyrite structure, the Ga/(In+Ga) ratio, Cu/(In+Ga) ratio and Se/(Cu+In+Ga) ratio are decrease with the beam currents increase, the surfaces morphology of the films are dense, and the resistivity of the film deposited with the beam current of 40mA is 0.56Ωcm, with a carrier concentration of 4.11Χ1018cm-3and mobility of 2.73cm2V-1s-1. The resulting film exhibited p-type conductivity.

Investigation of YSZ Thin Films on Silicon Wafer and NiO/YSZ Deposited by Ion Beam Sputtering Deposition (IBSD)

2007 ◽  
Vol 336-338 ◽  
pp. 1788-1790
Author(s):  
Yu Ju Chen ◽  
Wen Cheng J. Wei
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Sputtering Deposition ◽  
X Ray ◽  
Crystal Growth Process ◽  
Transmission Electron ◽  
Beam Sputtering

Ion-beam sputtering deposition is a physical deposited method which uses accelerated ionbeam to sputter oxide or metal targets, and deposits atoms on substrate. Thin films of yttrium-stabilized zirconia (YSZ) were deposited on Si (100) wafer and NiO/YSZ plate. Scanning electron microscopy and transmission electron microscopy with EDS were employed to study the microstructural and chemically stoichiometric results of the films and the crystal growth process by various heat treatments. X-ray diffraction was also used to analysis crystalline phase of the YSZ films. The influence of different targets, substrates deposited efficiency and the properties of the film will be presented and discussed.

Characterization of molybdenum/silicon multilayers deposited by ion beam sputtering and rf magnetron sputtering

1993 ◽  
Author(s):  
Katsuhiko Murakami ◽  
Hiroshi Nakamura ◽  
Tetsuya Oshino ◽  
Masayuki Ohtani ◽  
Hiroshi Nagata
Keyword(s):  
Magnetron Sputtering ◽  
Ion Beam ◽  
Rf Magnetron Sputtering ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Study on the Surface Quality of Al2O3 Nano-Films by Ion Beam Sputtering Deposition

2011 ◽  
Vol 148-149 ◽  
pp. 54-57
Author(s):  
Xiao Ping Lin ◽  
Yun Dong ◽  
Lian Wei Yang
Keyword(s):  
Surface Quality ◽  
Ion Beam ◽  
Three Dimensional ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Atomic Force ◽  
Beam Sputtering ◽  
Dimensional Growth ◽  
Different Thickness

The Al2O3 nano-films of different thicknesses (1~100nm) were successfully deposited on the monocrystalline Si surface by using ion beam sputtering deposition. The surface topography and the component of nano-films with different thickness were analyzed. The quality of the surface of nano-films was systematically studied. When the films’ thickness increase, the studies by atomic force microscope (AFM), X-ray photoelectron spectrum（XPS） show that the gathering grain continually grows up and transits from acerose cellula by two-dimensional growth to globularity by three-dimensional growth. The elements O, Al and Si were found on the surface of Al2O3 nano-films. With the thickness of the films increasing, the content of Al gradually increases and the intensity peak of Si wears off, the surface quality of the deposited films is ceaselessly improved

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