The properties of ZnO thin films fabricated by ion beam sputtering and RF magnetron sputtering

2008 ◽  
Author(s):  
X. X. He ◽  
H. Q. Li ◽  
J. B. Gu ◽  
S. B. Wu ◽  
B. Cao
2011 ◽  
Vol 233-235 ◽  
pp. 2399-2402 ◽  
Author(s):  
Shen Jiang Wu ◽  
Wei Shi ◽  
Jun Hong Su ◽  
Wen Qi Wang

Based on the ion beam sputtering deposition technology, we adopted the reactive sputtering deposition method to accomplish the coating on the glass substrata with ZnO thin films. We used the four-factor and three-level L9(34) orthogonal experiment to obtain the best technological parameters of deposited ZnO thin films: discharge voltage 3.5KV, oxygen current capacity 8SCCM, the coil current 8A, the distance between target and substrata 140mm. The purity of the deposited ZnO thin film is 85.77%, and it has the good crystallization in orientation. The experimental results show that research and development of the ion beam sputtering source is advanced and has a good application value, and the ion beam sputtering deposition technology can be used to deposit the preferred orientation thin films with good performance. The findings have provided the experimental result and the beneficial reference for the ion beam sputtering deposition research.


2007 ◽  
Vol 1012 ◽  
Author(s):  
Liang-chiun Chao ◽  
Chung-chi Liau

AbstractZnO thin films have been prepared by thermal oxidation of metal zinc films with different porosity. High and low porosity metal zinc films are prepared by DC magnetron sputtering and capillaritron ion beam sputtering, respectively. Near bandgap UV emission of ZnO thin films prepared from thermal oxidation of the low porosity film exhibit a maximum PL intensity after thermal oxidation at 410°C, while ZnO films prepared by thermal oxidation of the high porosity films exhibit a maximum PL intensity at oxidation temperature of 900°C. SEM micrographs indicate that ZnO prepared by thermal oxidation of low porosity films have a smooth surface morphology after thermal oxidation at 410°C, while ZnO prepared by thermal oxidation of high porosity zinc films exhibit a grain size of ∼ 800 nm after thermal oxidation at 1000°C.


2013 ◽  
Vol 114 (16) ◽  
pp. 163107 ◽  
Author(s):  
Sushil Kumar Pandey ◽  
Saurabh Kumar Pandey ◽  
Vishnu Awasthi ◽  
Ashish Kumar ◽  
Uday P. Deshpande ◽  
...  

2014 ◽  
Vol 37 (5) ◽  
pp. 983-989 ◽  
Author(s):  
Sushil Kumar Pandey ◽  
Saurabh Kumar Pandey ◽  
Vishnu Awasthi ◽  
Ashish Kumar ◽  
Uday P. Deshpande ◽  
...  

2011 ◽  
Vol 40 (3) ◽  
pp. 267-273 ◽  
Author(s):  
Guang-Xing Liang ◽  
Ping Fan ◽  
Xing-Min Cai ◽  
Dong-Ping Zhang ◽  
Zhuang-Hao Zheng

Shinku ◽  
1987 ◽  
Vol 30 (5) ◽  
pp. 508-511
Author(s):  
Yoshihiko SUZUKI ◽  
Tsutom YOTSUYA ◽  
Soichi OGAWA ◽  
Akira IWATA ◽  
Masakuni TOKAI ◽  
...  

1993 ◽  
Author(s):  
Katsuhiko Murakami ◽  
Hiroshi Nakamura ◽  
Tetsuya Oshino ◽  
Masayuki Ohtani ◽  
Hiroshi Nagata

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