On The Einstein relation In Superlattices Of Kane - Type Semiconductors In The Presence Of A Quantizing Magnetic Field

Author(s):  
S. N. Biswas ◽  
K. P. Ghatak
1989 ◽  
Vol 67 (1) ◽  
pp. 72-75 ◽  
Author(s):  
M. Mondal ◽  
S. N. Banik ◽  
K. P. Ghatak

An attempt is made to study the Einstein relation of the carriers in bismuth under magnetic quantization on the basis of the Abrikosov dispersion relation, which includes various types of anisotropics in the energy spectrum. It is found, taking spin and broadening into account, that the same ratio oscillates with the inverse quantizing magnetic field and increases with increasing carrier degeneracy respectively. In addition, the corresponding well-known result of parabolic energy bands is also obtained from the generalized expression as a special case.


1992 ◽  
Vol 242 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
Badal De

ABSTRACTin this paper we study the Einstein relation in superlattices of wide-band gap semiconductors under crossfield configuration and the for.-ning materials incorporating spin and broadening of Landau levels, it is found, taking GaAs/AÀAs superlattice as an example that the diffusivity-mobility ratio increases with increasing electron concentration and oscillates with inverse quantizing magnetic field due to SdH effect. Thetheoretical analysis is in agreement with the suggested experimental method of determining the same ratio in degenerate materials having arbitrary dispersion laws.


Sign in / Sign up

Export Citation Format

Share Document