An Improved Technique For 1/4 Micrometer Gate Length Gaas Mesfet Fabrication By Optical Lithography

1987 ◽  
Author(s):  
Brad D. Cantos ◽  
Ronald D. Remba
Keyword(s):  
Optical Lithography ◽  
Gate Length ◽  
Gaas Mesfet ◽  
Improved Technique

Half-micrometer gate-length ion-implanted GaAs MESFET with 0.8-dB noise figure at 16 GHz

1989 ◽  
Vol 10 (9) ◽  
pp. 409-411 ◽  
Author(s):  
C.L. Lau ◽  
M. Feng ◽  
T.R. Lepkowski ◽  
G.W. Wang ◽  
Y. Chang ◽  
...  
Keyword(s):  
Noise Figure ◽  
Gate Length ◽  
Gaas Mesfet ◽  
Ion Implanted

A sub-half-micron gate-length GaAs MESFET with new gate structure

1983 ◽  
Vol 4 (4) ◽  
pp. 99-101 ◽  
Author(s):  
Y. Imai ◽  
M. Uchida ◽  
K. Yamamoto ◽  
M. Hirayama
Keyword(s):  
Gate Length ◽  
Gaas Mesfet ◽  
Gate Structure

Dependence of GaAs MESFET model parameters on gate length

1994 ◽  
Vol 142 (2) ◽  
pp. K113-K116
Author(s):  
L. DobrzańSki
Keyword(s):  
Model Parameters ◽  
Gate Length ◽  
Gaas Mesfet

0.3µm Gate length super low noise GaAs MESFET

1982 ◽  
Author(s):  
H. Ishiuchi ◽  
H. Mizuno ◽  
Y. Kaneko ◽  
K. Arai ◽  
K. Suzuki
Keyword(s):  
Low Noise ◽  
Gate Length ◽  
Gaas Mesfet

scholarly journals Depletion Layer Modeling for Short Gate Length Non-Uniformly Doped GaAs MESFET Under Dark and Illuminated Condition

2014 ◽  
Vol 1 (1) ◽  
pp. 37-43
Author(s):  
Shweta Tripathi ◽  
S. Jit
Keyword(s):  
Depletion Region ◽  
Depletion Layer ◽  
Doping Profile ◽  
Gate Length ◽  
Model Formulation ◽  
Analytical Expression ◽  
Gaas Mesfet ◽  
Channel Region ◽  
Uniform Doping

This paper presents an analytical expression for the depletion region height of short gate length GaAs MESFET with non-uniform doping profile in the channel region. Both, dark as well as illuminated conditions have been considered for model formulation. Depletion region height sensitivities on the doping parameters have also been demonstrated.

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