Half-micrometer gate-length ion-implanted GaAs MESFET with 0.8-dB noise figure at 16 GHz

1989 ◽  
Vol 10 (9) ◽  
pp. 409-411 ◽  
Author(s):  
C.L. Lau ◽  
M. Feng ◽  
T.R. Lepkowski ◽  
G.W. Wang ◽  
Y. Chang ◽  
...  
Keyword(s):  
Noise Figure ◽  
Gate Length ◽  
Gaas Mesfet ◽  
Ion Implanted

scholarly journals Design and Validation of 100 nm GaN-On-Si Ka-Band LNA Based on Custom Noise and Small Signal Models

Electronics ◽  
2020 ◽  
Vol 9 (1) ◽  
pp. 150 ◽  
Author(s):  
Lorenzo Pace ◽  
Sergio Colangeli ◽  
Walter Ciccognani ◽  
Patrick Ettore Longhi ◽  
Ernesto Limiti ◽  
...  
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Gate Length ◽  
Small Signal ◽  
Linear Measurements ◽  
Ka Band ◽  
Noise Amplifier ◽  
Gan On Si ◽  
Noise Models

In this paper a GaN-on-Si MMIC Low-Noise Amplifier (LNA) working in the Ka-band is shown. The chosen technology for the design is a 100 nm gate length HEMT provided by OMMIC foundry. Both small-signal and noise models had been previously extracted by the means of an extensive measurement campaign, and were then employed in the design of the presented LNA. The amplifier presents an average noise figure of 2.4 dB, a 30 dB average gain value, and input/output matching higher than 10 dB in the whole 34–37.5 Ghz design band, while non-linear measurements testify a minimum output 1 dB compression point of 23 dBm in the specific 35–36.5 GHz target band. This shows the suitability of the chosen technology for low-noise applications.

d.c. Performance of short-channel ion-implanted GaAs MESFETs (The role of gate length shortening)

1990 ◽  
Vol 33 (10) ◽  
pp. 1223-1227 ◽  
Author(s):  
J. Kuzmik ◽  
T. Lalinský ◽  
Z. Mozolova ◽  
M. Porges
Keyword(s):  
Gate Length ◽  
Short Channel ◽  
Ion Implanted

Ion-implanted planar-gate GaAs MESFET optimized for single-voltage-supply operation

2001 ◽  
Vol 30 (1) ◽  
pp. 44-46
Author(s):  
C. C. Meng ◽  
J. W. Chen ◽  
S. J. Liu
Keyword(s):  
Voltage Supply ◽  
Gaas Mesfet ◽  
Ion Implanted

A super low-noise ion-implanted planar GaAs MESFET MMIC amplifier

2002 ◽  
Author(s):  
T. Sawai ◽  
M. Nishida ◽  
T. Hirai ◽  
K. Honda ◽  
T. Yamaguchi ◽  
...  
Keyword(s):  
Low Noise ◽  
Gaas Mesfet ◽  
Ion Implanted

Optically-controlled ion-implanted GaAs MESFET characteristic with opaque gate

1998 ◽  
Vol 45 (1) ◽  
pp. 78-84 ◽  
Author(s):  
Shubha ◽  
B.B. Pal ◽  
R.U. Khan
Keyword(s):  
Gaas Mesfet ◽  
Ion Implanted

Effect of STI, DSL and SMT onfTand noise-figure in 30 nm gate length NMOSFET

2008 ◽  
Vol 95 (10) ◽  
pp. 1103-1109 ◽  
Author(s):  
R. Srinivasan ◽  
Arup Ratan Saha
Keyword(s):  
Noise Figure ◽  
Gate Length
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