The variation of short-gate-length gaas mesfet intrinsic noise parameters with BIAS

1993 ◽  
Vol 6 (16) ◽  
pp. 892-895 ◽  
Author(s):  
S. D. Greaves ◽  
R. T. Unwin
Keyword(s):  
Intrinsic Noise ◽  
Gate Length ◽  
Noise Parameters ◽  
Gaas Mesfet

WAVE-BASED APPROACH FOR MICROWAVE NOISE CHARACTERIZATION

2008 ◽  
Vol 08 (01) ◽  
pp. R1-R14 ◽  
Author(s):  
C. H. CHEN ◽  
Y. L. WANG ◽  
M. H. BAKR
Keyword(s):  
Intrinsic Noise ◽  
Noise Parameters ◽  
Noise Characterization ◽  
Measurement Approach ◽  
Microwave Noise

The noise behavior of a two-port is usually described through the conventional set of noise parameters Fmin, Rn, and the complex Yopt. However, noise parameters developed using wave-based techniques also have their merit as they could offer different insights to a two-port's noise behavior. Unlike the conventional noise parameters, these wave-based noise parameters could be terminal-invariant and describe only the intrinsic noise behavior of a two-port. In this paper, several important noise parameters derived from wave-based approaches are reviewed. The derivation of each set of parameters is discussed and illustrated. The measurement approach of each set of parameters is also briefly covered.

Half-micrometer gate-length ion-implanted GaAs MESFET with 0.8-dB noise figure at 16 GHz

1989 ◽  
Vol 10 (9) ◽  
pp. 409-411 ◽  
Author(s):  
C.L. Lau ◽  
M. Feng ◽  
T.R. Lepkowski ◽  
G.W. Wang ◽  
Y. Chang ◽  
...  
Keyword(s):  
Noise Figure ◽  
Gate Length ◽  
Gaas Mesfet ◽  
Ion Implanted

ON THE INFLUENCE OF SPACE-QUANTIZATION EFFECTS ON THE RF NOISE BEHAVIOUR OF DG MOSFETS

2004 ◽  
Vol 04 (04) ◽  
pp. L561-L569 ◽  
Author(s):  
RAUL RENGEL ◽  
TOMAS GONZALEZ ◽  
MARIA J. MARTIN
Keyword(s):  
High Frequency ◽  
Quantum Confinement ◽  
Microwave Frequency ◽  
Intrinsic Noise ◽  
Frequency Noise ◽  
Noise Sources ◽  
Noise Parameters ◽  
Monte Carlo Investigation ◽  
Quantum Phenomena ◽  
Rf Noise

We present a particle-based Monte Carlo investigation of the high frequency noise behavior of a double gate MOSFET. The effective potential approach has been considered for the description of vertical quantum confinement of carriers within the channel. The intrinsic noise sources and the main circuital noise parameters are studied, together with the static and dynamic parameters, thus allowing to provide a full comprehension of the inner physics of the device and elucidating the consequences of quantum mechanical space-quantization effects (like charge repulsion from the gate-oxide boundaries). Results show that neglecting quantum phenomena leads to an important overestimation of gate capacitance and device transconductance and an underestimation of the final influence of induced gate noise (via the normalized parameter R) on the circuital noise parameters at RF and microwave frequency ranges.

scholarly journals An analytical approach to the HEMT noise wave model parameter determination

2017 ◽  
Vol 14 (1) ◽  
pp. 35-49
Author(s):  
Vladica Djordjevic ◽  
Zlatica Marinkovic ◽  
Olivera Pronic-Rancic ◽  
Vera Markovic
Keyword(s):  
Analytical Approach ◽  
Wave Model ◽  
High Electron Mobility Transistor ◽  
Intrinsic Noise ◽  
Parameter Determination ◽  
Second Step ◽  
Model Parameters ◽  
High Electron ◽  
Noise Parameters

This paper presents an analytical approach to determination of the noise wave model parameters for a high electron-mobility transistor working under different temperature and frequency conditions. The presented approach is composed of two steps and provides more efficient determination of these parameters than in the case of optimization procedures commonly applied for that purpose in circuit simulators. The first step is extraction of the noise parameters of transistor intrinsic circuit from the measured noise parameters of whole transistor using an analytical noise de-embedding procedure. The second step is calculation of the noise wave model parameters from the de-embedded intrinsic noise parameters using existing formulas. The accuracy of the presented approach is validated in a wide frequency and temperature range by comparison of the transistor noise parameters simulated for the determined noise wave model parameters with the measured noise parameters.

Sign in / Sign up

Export Citation Format

Share Document