scholarly journals Mueller matrix ellipsometry of artificial non-periodic line edge roughness in presence of finite numerical aperture

2011 ◽  
Author(s):  
Martin Foldyna ◽  
Thomas A. Germer ◽  
Brent C. Bergner
Keyword(s):  
Numerical Aperture ◽  
Mueller Matrix ◽  
Line Edge Roughness ◽  
Edge Roughness

scholarly journals Dielectric Response Spectroscopy as Means to Investigate Interfacial Effects for Ultra-Thin Film Polymer-Based High NA EUV Lithography

Polymers ◽  
2020 ◽  
Vol 12 (12) ◽  
pp. 2971
Author(s):  
Joren Severi ◽  
Danilo De Simone ◽  
Stefan De Gendt
Keyword(s):  
Film Thickness ◽  
Dielectric Response ◽  
Numerical Aperture ◽  
Ultra Violet ◽  
Leading Edge ◽  
Line Edge Roughness ◽  
Euv Lithography ◽  
Edge Roughness ◽  
Main Component ◽  
And Behavior

Extreme ultra-violet lithography (EUVL) is the leading-edge technology to produce advanced nanoelectronics. The further development of EUVL is heavily based on implementing the so-called high numerical aperture (NA) EUVL, which will enable even smaller pitches up to 8 nm half pitch (HP). In anticipation of this high NA technology, it is crucial to assess the readiness of the current resist materials for the high NA regime to comply with the demanding requirements of resolution, line-edge roughness, and sensitivity (RLS). The achievable tighter pitches require lower film thicknesses for both resist and underlying transfer layers. A concern that is tied to the thinning down is the potential change in resist properties and behavior due to the interaction with the underlayer. To increase the fundamental understanding of ultra-thin films for high NA EUVL, a method to investigate the interplay of reduced film thickness and different patterning-relevant underlayers is developed by looking at the glass transition temperature (Tg) of polymer-based resists. To minimize the ambiguity of the results due to resist additives (i.e., photoacid generator (PAG) and quencher), it was opted to move forward with polymer-only samples, the main component of the resist, at this stage of the investigation. By using dielectric response spectroscopy, the results obtained show that changing the protection group of the polymer, as well as altering the polymer film thickness impacts the dynamics of the polymer mobility, which can be assessed through the Tg of the system. Unexpectedly, changing the underlayer did not result in a clear change in the polymer mobility at the tested film thicknesses.

Nondestructive analysis of lithographic patterns with natural line edge roughness from Mueller matrix ellipsometric data

2016 ◽  
Vol 388 ◽  
pp. 524-530 ◽  
Author(s):  
Xiuguo Chen ◽  
Yating Shi ◽  
Hao Jiang ◽  
Chuanwei Zhang ◽  
Shiyuan Liu
Keyword(s):  
Mueller Matrix ◽  
Line Edge Roughness ◽  
Nondestructive Analysis ◽  
Edge Roughness

Formulation of trade-off relationships between resolution, line edge roughness, and sensitivity in sub-10 nm half-pitch region for chemically amplified extreme ultraviolet resists

2021 ◽  
Author(s):  
Takahiro KOZAWA
Keyword(s):  
Extreme Ultraviolet ◽  
Numerical Aperture ◽  
Line Edge Roughness ◽  
Chemical Gradient ◽  
Trade Off ◽  
Chemically Amplified ◽  
Optical Images ◽  
Euv Lithography ◽  
Edge Roughness ◽  
The Relationship

Abstract The manufacturing of semiconductor devices using extreme ultraviolet (EUV) lithography started in 2019. A high numerical aperture (NA) tool under development is capable of resolving 8 nm line-and-space optical images and will extend the application of EUV lithography. However, resist materials have not been yet applicable to the production with 8 nm resolution. In this study, the relationships among the half-pitch of line-and-space patterns (resolution), chemical gradient [an indicator of line edge roughness (LER)], and sensitivity were investigated in the sub-10 nm half-pitch region for chemically amplified EUV resists. The chemical gradient was simulated on the basis of their sensitization and reaction mechanisms. The relationship was formulated as a function of total sensitizer concentration (the sum of photoacid generator and photodecomposable quencher concentrations) and the thermalization distance of secondary electrons. The effect of thermalized electrons was well incorporated into the trade-off relationships between resolution, LER, and sensitivity.

High-NA EUV lithography: current status and outlook for the future

2022 ◽  
Author(s):  
Harry Jay Levinson
Keyword(s):  
High Resolution ◽  
Extreme Ultraviolet ◽  
Numerical Aperture ◽  
High Volume ◽  
Current Status ◽  
Light Sources ◽  
Line Edge Roughness ◽  
Optical Scanners ◽  
Euv Lithography ◽  
Edge Roughness

Abstract High-NA extreme ultraviolet (EUV) lithography is currently in development. Fabrication of exposure tools and optics with a numerical aperture (NA) equal to 0.55 has started at ASML and Carl Zeiss. Lenses with such high NA will have very small depths-of-focus, which will require improved focus systems and significant improvements in wafer flatness during processing. Lenses are anamorphic to address mask 3D issues, which results in wafer field sizes of 26 mm × 16.5 mm, half that of lower NA EUV tools and optical scanners. Production of large die will require stitching. Computational infrastructure is being created to support high-NA lithography, including simulators that use Tatian polynomials to characterize the aberrations of lenses with central obscurations. High resolution resists that meet the line-edge roughness (LER) and defect requirements for high-volume manufacturing (HVM) also need to be developed. High power light sources will also be needed to limit photon shot noise.

Application of Mueller matrix spectroscopic ellipsometry to determine line edge roughness on photomasks

2013 ◽  
Author(s):  
A. Heinrich ◽  
I. Dirnstorfer ◽  
J. Bischoff ◽  
U. Richter ◽  
H. Ketelson ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Mueller Matrix ◽  
Line Edge Roughness ◽  
Edge Roughness

Characterization of Line-Edge Roughness in Cu/Low-kInterconnect Pattern

2008 ◽  
Vol 47 (4) ◽  
pp. 2501-2505 ◽  
Author(s):  
Atsuko Yamaguchi ◽  
Daisuke Ryuzaki ◽  
Ken-ichi Takeda ◽  
Jiro Yamamoto ◽  
Hiroki Kawada ◽  
...  
Keyword(s):  
Line Edge Roughness ◽  
Edge Roughness
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