High performance blue light-emitting diodes on patterned Si substrate

2008 ◽  
Author(s):  
Zhanguo Li ◽  
Guojun Liu ◽  
Minghui You ◽  
Lin Li ◽  
Mei Li ◽  
...  
Keyword(s):  
Blue Light ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Si Substrate ◽  
Light Emitting

(K0.5Na0.5)NbO3:Eu3+/Bi3+: a novel, highly efficient, red light-emitting material with superior water resistance behavior

RSC Advances ◽  
2015 ◽  
Vol 5 (6) ◽  
pp. 4707-4715 ◽  
Author(s):  
Qiwei Zhang ◽  
Haiqin Sun ◽  
Tao Kuang ◽  
Ruiguang Xing ◽  
Xihong Hao
Keyword(s):  
Blue Light ◽  
White Light ◽  
High Performance ◽  
Water Resistance ◽  
Light Emitting Diodes ◽  
Red Light ◽  
Light Emitting ◽  
Highly Efficient ◽  
White Light Emitting Diodes

Materials emitting red light (∼611 nm) under excitation with blue light (440–470 nm) are highly desired for fabricating high-performance white light-emitting diodes (LEDs).

Highly efficient single-layer blue polymer light-emitting diodes based on hole-transporting group substituted poly(fluorene-co-dibenzothiophene-S,S-dioxide)

2017 ◽  
Vol 5 (37) ◽  
pp. 9680-9686 ◽  
Author(s):  
Feng Peng ◽  
Na Li ◽  
Lei Ying ◽  
Wenkai Zhong ◽  
Ting Guo ◽  
...  
Keyword(s):  
Blue Light ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Single Layer ◽  
Random Copolymer ◽  
Hole Transport ◽  
Light Emitting ◽  
Hole Transporting ◽  
Polymer Light Emitting Diodes ◽  
Copolymer Poly

We developed a series of high-performance blue light-emitting polymers that contain hole-transport moieties comprising carbazole or triphenylamine substituents in the side chains of random copolymer poly(fluorene-co-dibenzothiophene-S,S-dioxide) (PFSO).

Aggregation-enhanced emission active tetraphenylbenzene-cored efficient blue light emitter

2017 ◽  
Vol 196 ◽  
pp. 245-253 ◽  
Author(s):  
Lingzhi Li ◽  
Han Nie ◽  
Ming Chen ◽  
Jingzhi Sun ◽  
Anjun Qin ◽  
...  
Keyword(s):  
Blue Light ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Organic Light Emitting Diodes ◽  
Emission Characteristics ◽  
Blue Light Emission ◽  
Light Emitting ◽  
Light Emitter ◽  
Organic Light

A tetraphenylbenzene (TPB) cored luminophore of TPB-AC with aggregation-enhanced emission characteristics was designed and synthesized. TPB-AC could be potentially applied for the fabrication of high performance organic light-emitting diodes (OLEDs) with blue light emission.

InGaN/GaN Blue Light Emitting Diodes Using Freestanding GaN Extracted from a Si Substrate

ACS Photonics ◽  
2018 ◽  
Vol 5 (4) ◽  
pp. 1453-1459 ◽  
Author(s):  
Moonsang Lee ◽  
Mino Yang ◽  
Keun Man Song ◽  
Sungsoo Park
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Si Substrate ◽  
Light Emitting

High performance blue light-emitting diodes based on conjugated polymer blends

2001 ◽  
Vol 121 (1-3) ◽  
pp. 1729-1730 ◽  
Author(s):  
L.C. Palilis ◽  
D.G. Lidzey ◽  
M. Redecker ◽  
D.D.C. Bradley ◽  
M. Inbasekaran ◽  
...  
Keyword(s):  
Polymer Blends ◽  
Blue Light ◽  
Conjugated Polymer ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Light Emitting

scholarly journals Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate

Nanomaterials ◽  
2018 ◽  
Vol 8 (7) ◽  
pp. 543 ◽  
Author(s):  
Moonsang Lee ◽  
Hyunkyu Lee ◽  
Keun Song ◽  
Jaekyun Kim
Keyword(s):  
Leakage Current ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Forward Bias ◽  
Si Substrate ◽  
Temperature Dependent ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Characteristics ◽  
Recombination Current

We report forward tunneling characteristics of InGaN/GaN blue light emitting diodes (LEDs) on freestanding GaN detached from a Si substrate using temperature-dependent current–voltage (T-I-V) measurements. T-I-V analysis revealed that the conduction mechanism of InGaN/GaN LEDs using the homoepitaxial substrate can be distinguished by tunneling, diffusion and recombination current, and series resistance regimes. Their improved crystal quality, inherited from the nature of homoepitaxy, resulted in suppression of forward leakage current. It was also found that the tunneling via heavy holes in InGaN/GaN LEDs using the homoepitaxial substrate can be the main transport mechanism under low forward bias, consequentially leading to the improved forward leakage current characteristics.

High Performance Quasi‐2D Perovskite Sky‐Blue Light‐Emitting Diodes Using a Dual‐Ligand Strategy

Small ◽  
2020 ◽  
Vol 16 (32) ◽  
pp. 2002940 ◽  
Author(s):  
Fuzhi Wang ◽  
Zhenye Wang ◽  
Wenda Sun ◽  
Zhibin Wang ◽  
Yiming Bai ◽  
...  
Keyword(s):  
Blue Light ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Light Emitting
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