InGaN/GaN Blue Light Emitting Diodes Using Freestanding GaN Extracted from a Si Substrate

ACS Photonics ◽  
2018 ◽  
Vol 5 (4) ◽  
pp. 1453-1459 ◽  
Author(s):  
Moonsang Lee ◽  
Mino Yang ◽  
Keun Man Song ◽  
Sungsoo Park
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Si Substrate ◽  
Light Emitting

High performance blue light-emitting diodes on patterned Si substrate

2008 ◽  
Author(s):  
Zhanguo Li ◽  
Guojun Liu ◽  
Minghui You ◽  
Lin Li ◽  
Mei Li ◽  
...  
Keyword(s):  
Blue Light ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Si Substrate ◽  
Light Emitting

scholarly journals Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate

Nanomaterials ◽  
2018 ◽  
Vol 8 (7) ◽  
pp. 543 ◽  
Author(s):  
Moonsang Lee ◽  
Hyunkyu Lee ◽  
Keun Song ◽  
Jaekyun Kim
Keyword(s):  
Leakage Current ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Forward Bias ◽  
Si Substrate ◽  
Temperature Dependent ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Characteristics ◽  
Recombination Current

We report forward tunneling characteristics of InGaN/GaN blue light emitting diodes (LEDs) on freestanding GaN detached from a Si substrate using temperature-dependent current–voltage (T-I-V) measurements. T-I-V analysis revealed that the conduction mechanism of InGaN/GaN LEDs using the homoepitaxial substrate can be distinguished by tunneling, diffusion and recombination current, and series resistance regimes. Their improved crystal quality, inherited from the nature of homoepitaxy, resulted in suppression of forward leakage current. It was also found that the tunneling via heavy holes in InGaN/GaN LEDs using the homoepitaxial substrate can be the main transport mechanism under low forward bias, consequentially leading to the improved forward leakage current characteristics.

scholarly journals Effect of plasma surface treatment on embedded n-contact for GaN-based blue light-emitting diodes grown on Si substrate

2017 ◽  
Vol 66 (4) ◽  
pp. 047801
Author(s):  
Feng Bo ◽  
Deng Biao ◽  
Liu Le-Gong ◽  
Li Zeng-Cheng ◽  
Feng Mei-Xin ◽  
...  
Keyword(s):  
Surface Treatment ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Si Substrate ◽  
Light Emitting ◽  
Plasma Surface ◽  
Plasma Surface Treatment

Blue light-emitting diodes in hair regrowth: the first prospective study

2021 ◽  
Author(s):  
G. Lodi ◽  
M. Sannino ◽  
G. Cannarozzo ◽  
A. Giudice ◽  
E. Del Duca ◽  
...  
Keyword(s):  
Prospective Study ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Hair Regrowth

scholarly journals Air stable and highly efficient Bi3+-doped Cs2SnCl6 for blue light-emitting diodes

RSC Advances ◽  
2021 ◽  
Vol 11 (42) ◽  
pp. 26415-26420
Author(s):  
Yue Yao ◽  
Si-Wei Zhang ◽  
Zijian Liu ◽  
Chun-Yun Wang ◽  
Ping Liu ◽  
...  
Keyword(s):  
Quantum Yield ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Color Coordinates ◽  
Blue Led ◽  
Highly Efficient ◽  
Photoluminescence Quantum Yield ◽  
Long Life

A Bi3+-doped Cs2SnCl6 exhibits photoluminescence at around 456 nm and a photoluminescence quantum yield of 31%. The blue LED based on the Bi3+-doped Cs2SnCl6 phosphor exhibits a long life of 120 hours and a CIE color coordinates of (0.14, 0.11).

scholarly journals Device Modeling of Quantum Dot–Organic Light Emitting Diodes for High Green Color Purity

2021 ◽  
Vol 11 (6) ◽  
pp. 2828
Author(s):  
Byoung-Seong Jeong
Keyword(s):  
Quantum Dot ◽  
Emission Spectrum ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Color Purity ◽  
Wavelength Band ◽  
Light Emitting ◽  
Green Color ◽  
Organic Light

In this study, the optimal structure for obtaining high green color purity was investigated by modeling quantum dot (QD)–organic light-emitting diodes (OLED). It was found that even if the green quantum dot (G-QD) density in the G-QD layer was 30%, the full width at half maximum (FWHM) in the green wavelength band could be minimized to achieve a sharp emission spectrum, but it was difficult to completely block the blue light leakage with the G-QD layer alone. This blue light leakage problem was solved by stacking a green color filter (G-CF) layer on top of the G-QD layer. When G-CF thickness 5 μm was stacked, blue light leakage was blocked completely, and the FWHM of the emission spectrum in the green wavelength band was minimized, resulting in high green color purity. It is expected that the overall color gamut of QD-OLED can be improved by optimizing the device that shows such excellent green color purity.

High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer

2003 ◽  
Vol 42 (Part 2, No. 3A) ◽  
pp. L226-L228 ◽  
Author(s):  
Baijun Zhang ◽  
Takashi Egawa ◽  
Hiroyasu Ishikawa ◽  
Yang Liu ◽  
Takashi Jimbo
Keyword(s):  
Quantum Well ◽  
Buffer Layer ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Algan Buffer
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