Point defects in GaN and related group-III nitrides studied by means of positron annihilation

2011 ◽  
Author(s):  
Akira Uedono ◽  
Shoji Ishibashi ◽  
Shigefusa F. Chichibu ◽  
Katsuhiro Akimoto
Keyword(s):  
Positron Annihilation ◽  
Point Defects ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
Related Group

Process simulation ofp -doping in GaN and related group III nitrides

2007 ◽  
Vol 4 (5) ◽  
pp. 1694-1697 ◽  
Author(s):  
Y. J. Zhou ◽  
Z. Q. Li ◽  
A. EL Boukili ◽  
Z. M. Simon Li
Keyword(s):  
Process Simulation ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
Related Group

Point defects in group-III nitride semiconductors studied by positron annihilation

2009 ◽  
Vol 311 (10) ◽  
pp. 3075-3079 ◽  
Author(s):  
A. Uedono ◽  
S. Ishibashi ◽  
T. Ohdaira ◽  
R. Suzuki
Keyword(s):  
Positron Annihilation ◽  
Point Defects ◽  
Nitride Semiconductors ◽  
Group Iii ◽  
Group Iii Nitride

Point defects in group III nitrides: A comparative first-principles study

2019 ◽  
Vol 125 (21) ◽  
pp. 215705 ◽  
Author(s):  
Yinlu Gao ◽  
Dan Sun ◽  
Xue Jiang ◽  
Jijun Zhao
Keyword(s):  
Point Defects ◽  
First Principles ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
First Principles Study

TEM and AFM studies of structural defects in α-GaN films

1995 ◽  
Vol 53 ◽  
pp. 456-457
Author(s):  
W. Qian ◽  
M. Skowronski ◽  
M. De Graef ◽  
G. Rohrer ◽  
K. Doverspike ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Defect Density ◽  
Wide Band ◽  
Group Iii Nitrides ◽  
Structural Defects ◽  
Group Iii ◽  
Transmission Electron ◽  
Potential Applications ◽  
Related Group

Interest in wide band-gap GaN and related group-III nitrides has grown recently due to their potential applications for short wavelength optoelectronic devices. One of the main obstacles for their application is the high density of defects formed during heteroepitaxy. Though important progress has been made by using a low temperature A1N buffer layer% recently reported films still contain a defect density (mainly threading dislocations) on the order of 1010 cm-2. This paper reports our current studies of structural defects in α-GaN thin films grown on a-plane (110) and c-plane (0001) sapphire substrates by organometallic vapor phase epitaxy (OMVPE). Atomic force microscopy (AFM), conventional and high resolution transmission electron microscopy (TEM) were used to investigate the nature and origin of these defects.Single crystal α-GaN films were grown using a low temperature A1N or GaN buffer layer in an inductively-heated, water cooled, vertical OMVPE reactor operated at 57 torr.

Plasma characteristics and the growth of group III-nitrides by metalorganic molecular beam epitaxy

1997 ◽  
Vol 26 (11) ◽  
pp. 1266-1269 ◽  
Author(s):  
J. D. Mackenzie ◽  
L. Abbaschian ◽  
C. R. Abernathy ◽  
S. M. Donovan ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Plasma Characteristics

Low-density nanoporous phases of group-III nitrides built from sodalite cage clusters

2013 ◽  
Vol 15 (21) ◽  
pp. 8186 ◽  
Author(s):  
Zhifeng Liu ◽  
Xinqiang Wang ◽  
Gaobin Liu ◽  
Ping Zhou ◽  
Jian Sui ◽  
...  
Keyword(s):  
Group Iii Nitrides ◽  
Low Density ◽  
Group Iii
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