Process simulation ofp -doping in GaN and related group III nitrides

2007 ◽  
Vol 4 (5) ◽  
pp. 1694-1697 ◽  
Author(s):  
Y. J. Zhou ◽  
Z. Q. Li ◽  
A. EL Boukili ◽  
Z. M. Simon Li
Keyword(s):  
Process Simulation ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
Related Group

Point defects in GaN and related group-III nitrides studied by means of positron annihilation

2011 ◽  
Author(s):  
Akira Uedono ◽  
Shoji Ishibashi ◽  
Shigefusa F. Chichibu ◽  
Katsuhiro Akimoto
Keyword(s):  
Positron Annihilation ◽  
Point Defects ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
Related Group

TEM and AFM studies of structural defects in α-GaN films

1995 ◽  
Vol 53 ◽  
pp. 456-457
Author(s):  
W. Qian ◽  
M. Skowronski ◽  
M. De Graef ◽  
G. Rohrer ◽  
K. Doverspike ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Defect Density ◽  
Wide Band ◽  
Group Iii Nitrides ◽  
Structural Defects ◽  
Group Iii ◽  
Transmission Electron ◽  
Potential Applications ◽  
Related Group

Interest in wide band-gap GaN and related group-III nitrides has grown recently due to their potential applications for short wavelength optoelectronic devices. One of the main obstacles for their application is the high density of defects formed during heteroepitaxy. Though important progress has been made by using a low temperature A1N buffer layer% recently reported films still contain a defect density (mainly threading dislocations) on the order of 1010 cm-2. This paper reports our current studies of structural defects in α-GaN thin films grown on a-plane (110) and c-plane (0001) sapphire substrates by organometallic vapor phase epitaxy (OMVPE). Atomic force microscopy (AFM), conventional and high resolution transmission electron microscopy (TEM) were used to investigate the nature and origin of these defects.Single crystal α-GaN films were grown using a low temperature A1N or GaN buffer layer in an inductively-heated, water cooled, vertical OMVPE reactor operated at 57 torr.

Plasma characteristics and the growth of group III-nitrides by metalorganic molecular beam epitaxy

1997 ◽  
Vol 26 (11) ◽  
pp. 1266-1269 ◽  
Author(s):  
J. D. Mackenzie ◽  
L. Abbaschian ◽  
C. R. Abernathy ◽  
S. M. Donovan ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Plasma Characteristics

Low-density nanoporous phases of group-III nitrides built from sodalite cage clusters

2013 ◽  
Vol 15 (21) ◽  
pp. 8186 ◽  
Author(s):  
Zhifeng Liu ◽  
Xinqiang Wang ◽  
Gaobin Liu ◽  
Ping Zhou ◽  
Jian Sui ◽  
...  
Keyword(s):  
Group Iii Nitrides ◽  
Low Density ◽  
Group Iii

Group III Nitrides

2017 ◽  
pp. 209-228
Author(s):  
Ferdinand Scholz
Keyword(s):  
Group Iii Nitrides ◽  
Group Iii

Growth Kinetics and Thermal Stress in AlN Bulk Crystal Growth

2002 ◽  
Author(s):  
Bei Wu ◽  
Ronghui Ma ◽  
Hui Zhang ◽  
Michael Dudley ◽  
Raoul Schlesser ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Crystal Growth ◽  
Temperature Distribution ◽  
Stress Level ◽  
Grown Crystal ◽  
Power Level ◽  
Chemical Species ◽  
Group Iii Nitrides ◽  
Minor Effect ◽  
Group Iii

Group III nitrides, such as GaN, AlN and InGaN, have attracted a lot of attention due to the development of blue-green and ultraviolet light emitting diodes (LEDs) and lasers. In this paper, an integrated model has developed based on the conservation of momentum, mass, chemical species and energy together with necessary boundary conditions that account for heterogeneous chemical reactions both at the source and seed surfaces. The simulation results have been compared with temperature measurements for different power levels and flow rates in a reactor specially designed for nitride crystal growth at NCSU. It is evident that the heat power level affects the entire temperature distribution greatly while the flow rate has minor effect on the temperature distribution. The results also show that the overall thermal stress level is higher than the critical resolved shear stress, which means thermal elastic stress can be a major source of dislocation density in the as-grown crystal. The stress level is strongly dependent on the temperature gradient in the as-grown crystal. Results are correlated well with defects showing in an X-ray topograph for the AlN wafer.

Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System

2018 ◽  
Vol 52 (7) ◽  
pp. 942-949 ◽  
Author(s):  
V. V. Emtsev ◽  
E. V. Gushchina ◽  
V. N. Petrov ◽  
N. A. Tal’nishnih ◽  
A. E. Chernyakov ◽  
...  
Keyword(s):  
Group Iii Nitrides ◽  
Group Iii ◽  
Fractal Percolation ◽  
Device Structures
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