Design of a silicon avalanche photodiode pixel with integrated laser diode using back-illuminated crystallographically etched silicon-on-sapphire with monolithically integrated microlens for dual-mode passive and active imaging arrays

2010 ◽  
Author(s):  
Alvin G. Stern
Keyword(s):  
Laser Diode ◽  
Avalanche Photodiode ◽  
Dual Mode ◽  
Imaging Arrays ◽  
Monolithically Integrated ◽  
Active Imaging ◽  
Etched Silicon ◽  
Back Illuminated

GaAs-Based Nanoneedle Light Emitting Diode and Avalanche Photodiode Monolithically Integrated on a Silicon Substrate

Nano Letters ◽  
2011 ◽  
Vol 11 (2) ◽  
pp. 385-390 ◽  
Author(s):  
Linus C. Chuang ◽  
Forrest G. Sedgwick ◽  
Roger Chen ◽  
Wai Son Ko ◽  
Michael Moewe ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Light Emitting Diode ◽  
Avalanche Photodiode ◽  
Light Emitting ◽  
Monolithically Integrated

7.4 Gbit/s monolithically integrated GaAs/AlGaAs laser diode-laser driver structure

1993 ◽  
Vol 29 (19) ◽  
pp. 1694 ◽  
Author(s):  
J. Hornung ◽  
Z.-G. Wang ◽  
W. Bronner ◽  
E. Olander ◽  
K. Köhler ◽  
...  
Keyword(s):  
Diode Laser ◽  
Laser Diode ◽  
Monolithically Integrated ◽  
Laser Driver

scholarly journals A 45 nm CMOS Avalanche Photodiode with 8.4-GHz Bandwidth

Micromachines ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 65
Author(s):  
Wenhao Zhi ◽  
Qingxiao Quan ◽  
Pingping Yu ◽  
Yanfeng Jiang
Keyword(s):  
Optical Communication ◽  
Integrated Circuit ◽  
Communication Systems ◽  
Complementary Metal Oxide Semiconductor ◽  
Avalanche Photodiode ◽  
Cmos Technology ◽  
Optical Signal ◽  
Oxide Semiconductor ◽  
Monolithically Integrated ◽  
Process Modification

Photodiode is one of the key components in optoelectronic technology, which is used to convert optical signal into electrical ones in modern communication systems. In this paper, an avalanche photodiode (APD) is designed and fulfilled, which is compatible with Taiwan Semiconductor Manufacturing Company (TSMC) 45-nm standard complementary metal–oxide–semiconductor (CMOS) technology without any process modification. The APD based on 45 nm process is beneficial to realize a smaller and more complex monolithically integrated optoelectronic chip. The fabricated CMOS APD operates at 850 nm wavelength optical communication. Its bandwidth can be as high as 8.4 GHz with 0.56 A/W responsivity at reverse bias of 20.8 V. Its active area is designed to be 20 × 20 μm2. The Simulation Program with Integrated Circuit Emphasis (SPICE) model of the APD is also proposed and verified. The key parameters are extracted based on its electrical, optical and frequency responses by parameter fitting. The device has wide potential application for optical communication systems.

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