GaAs-Based Nanoneedle Light Emitting Diode and Avalanche Photodiode Monolithically Integrated on a Silicon Substrate

Nano Letters ◽  
2011 ◽  
Vol 11 (2) ◽  
pp. 385-390 ◽  
Author(s):  
Linus C. Chuang ◽  
Forrest G. Sedgwick ◽  
Roger Chen ◽  
Wai Son Ko ◽  
Michael Moewe ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Light Emitting Diode ◽  
Avalanche Photodiode ◽  
Light Emitting ◽  
Monolithically Integrated

Tunable, full-color nanowire light emitting diode arrays monolithically integrated on Si and sapphire

2016 ◽  
Author(s):  
Renjie Wang ◽  
Yong-Ho Ra ◽  
Yuanpeng Wu ◽  
Songrui Zhao ◽  
Hieu P. T. Nguyen ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Light Emitting ◽  
Monolithically Integrated ◽  
Full Color

Silicon substrate with TSV for light emitting diode packaging

2012 ◽  
Author(s):  
Zhicheng Lv ◽  
Xiaogang Liu ◽  
Liang Yang ◽  
Jiaojiao Yuan ◽  
Xuefang Wang ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Light Emitting Diode ◽  
Light Emitting

scholarly journals Flexible and monolithically integrated multicolor light emitting diodes using morphology-controlled GaN microstructures grown on graphene films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Keundong Lee ◽  
Dongha Yoo ◽  
Hongseok Oh ◽  
Gyu-Chul Yi
Keyword(s):  
Mechanical Stability ◽  
Growth Parameters ◽  
Light Emitting Diode ◽  
Growth Time ◽  
Controlled Growth ◽  
Light Emitting ◽  
Cvd Graphene ◽  
Monolithically Integrated ◽  
Graphene Films ◽  
Led Arrays

AbstractWe report flexible and monolithically integrated multicolor light-emitting diode (LED) arrays using morphology-controlled growth of GaN microstructures on chemical-vapor-deposited (CVD) graphene films. As the morphology-controlled growth template of GaN microstructures, we used position-controlled ZnO nanostructure arrays with different spacings grown on graphene substrates. In particular, we investigated the effect of the growth parameters, including micropattern spacings and growth time and temperature, on the morphology of the GaN microstructures when they were coated on ZnO nanostructures on graphene substrates. By optimizing the growth parameters, both GaN microrods and micropyramids formed simultaneously on the graphene substrates. Subsequent depositions of InGaN/GaN quantum well and p-GaN layers and n- and p-type metallization yielded monolithic integration of microstructural LED arrays on the same substrate, which enabled multicolor emission depending on the shape of the microstructures. Furthermore, the CVD graphene substrates beneath the microstructure LEDs facilitated transfer of the LED arrays onto any foreign substrate. In this study, Cu foil was used for flexible LEDs. The flexible devices exhibited stable electroluminescence, even under severe bending conditions. Cyclic bending tests demonstrated the excellent mechanical stability and reliability of the devices.

scholarly journals High-speed III-V nanowire photodetector monolithically integrated on Si

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Svenja Mauthe ◽  
Yannick Baumgartner ◽  
Marilyne Sousa ◽  
Qian Ding ◽  
Marta D. Rossell ◽  
...  
Keyword(s):  
High Speed ◽  
Light Emitting Diode ◽  
Spectral Response ◽  
Optical Data ◽  
Fully Integrated ◽  
Light Emitting ◽  
Optical Links ◽  
Monolithically Integrated ◽  
Integrated Optical ◽  
Local Integration

Abstract Direct epitaxial growth of III-Vs on silicon for optical emitters and detectors is an elusive goal. Nanowires enable the local integration of high-quality III-V material, but advanced devices are hampered by their high-aspect ratio vertical geometry. Here, we demonstrate the in-plane monolithic integration of an InGaAs nanostructure p-i-n photodetector on Si. Using free space coupling, photodetectors demonstrate a spectral response from 1200-1700 nm. The 60 nm thin devices, with footprints as low as ~0.06 μm2, provide an ultra-low capacitance which is key for high-speed operation. We demonstrate high-speed optical data reception with a nanostructure photodetector at 32 Gb s−1, enabled by a 3 dB bandwidth exceeding ~25 GHz. When operated as light emitting diode, the p-i-n devices emit around 1600 nm, paving the way for future fully integrated optical links.

scholarly journals Heat transfer and structure stress analysis of micro packaging component of high power light emitting diode

2013 ◽  
Vol 17 (5) ◽  
pp. 1277-1283 ◽  
Author(s):  
Chih-Neng Hsu ◽  
Yu-Hao Chang ◽  
Chang-Yuan Liu ◽  
Shih-Hao Fang ◽  
Chun-Chieh Huang
Keyword(s):  
Heat Transfer ◽  
Stress Analysis ◽  
High Power ◽  
Silicon Substrate ◽  
Heat Dissipation ◽  
Light Emitting Diode ◽  
Material Structure ◽  
Light Emitting ◽  
Micro Scale ◽  
Chip Temperature

This paper focuses on the heat transfer and structural stress analysis of the micro- scale packaging structure of a high-power light emitting diode. The thermal-effect and thermal-stress of light emitting diode are determined numerically. Light emitting diode is attached to the silicon substrate through the wire bonding process by using epoxy as die bond material. The silicon substrate is etched with holes at the bottom and filled with high conductivity copper material. The chip temperature and structure stress increase with input power consumption. The micro light emitting diode is mounted on the heat sink to increase the heat dissipation performance, to decrease chip temperature, to enhance the material structure reliability and safety, and to avoid structure failure as well. This paper has successfully used the finite element method to the micro-scale light emitting diode heat transfer and stress concentration at the edges through etched holes.

Electrically Driven Single Pyramid InGaN/GaN Micro Light-Emitting Diode Grown on Silicon Substrate

2015 ◽  
Vol 11 (3) ◽  
pp. 285-291 ◽  
Author(s):  
Weijie Chen ◽  
Guoheng Hu ◽  
Jianliang Jiang ◽  
Minggang Liu ◽  
Yibin Yang ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Light Emitting Diode ◽  
Light Emitting

scholarly journals Color-tunable, phosphor-free InGaN nanowire light-emitting diode arrays monolithically integrated on silicon

2014 ◽  
Vol 22 (S7) ◽  
pp. A1768 ◽  
Author(s):  
Renjie Wang ◽  
Hieu P. T. Nguyen ◽  
Ashfiqua T. Connie ◽  
J. Lee ◽  
Ishiang Shih ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Light Emitting ◽  
Monolithically Integrated ◽  
Color Tunable
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