III-V strain layer superlattice based band engineered avalanche photodiodes (Presentation Recording)

2015 ◽  
Author(s):  
Sid Ghosh
Keyword(s):  
Avalanche Photodiodes ◽  
Strain Layer ◽  
Strain Layer Superlattice

Dual-carrier multiplication high-gain MWIR strain layer superlattice impact ionization engineered avalanche photodiodes

2010 ◽  
Author(s):  
Siddhartha Ghosh ◽  
Koushik Banerjee ◽  
Qing Duan ◽  
Christoph H. Grein ◽  
Elena A. Plis ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
High Gain ◽  
Carrier Multiplication ◽  
Strain Layer ◽  
Strain Layer Superlattice

Single Carrier Initiated Low Excess Noise Mid-Wavelength Infrared Avalanche Photodiode using InAs-GaSb Strained Layer Superlattice

2008 ◽  
Vol 1076 ◽  
Author(s):  
Koushik Banerjee ◽  
Shubhrangshu Mallick ◽  
Siddhartha Ghosh ◽  
Elena Plis ◽  
Jean Baptiste Rodriguez ◽  
...  
Keyword(s):  
Indium Arsenide ◽  
Gallium Antimonide ◽  
Avalanche Photodiodes ◽  
Avalanche Photodiode ◽  
Excess Noise ◽  
Single Carrier ◽  
Strained Layer Superlattice ◽  
Strain Layer ◽  
Strain Layer Superlattice ◽  
Noise Factors

ABSTRACTMid-wavelength infrared (MWIR) avalanche photodiodes (APDs) were fabricated using Indium Arsenide- Gallium Antimonide (InAs-GaSb) based strain layer superlattice (SLS) structures. They were engineered specifically to have either electron or hole dominated ionization. The gain characteristics and the excess noise factors were measured for both devices. The electron dominated p+-n−-n APD with a cut-off wavelength of 4.13 μm at 77 K had a maximum multiplication gain of 1800 measured at -20 V while that of the hole dominated n+-p--p structure with a cut-off wavelength of 4.98 μm at 77 K was 21.1 at -5 V at 77 K. Excess noise factors were measured between 1-1.2 up to a gain of 800 and between 1-1.18 up to a gain of 7 for electron and hole dominated APDs respectively.

Low operating bias InAs/GaSb strain layer superlattice LWIR detector

2015 ◽  
Vol 70 ◽  
pp. 58-61 ◽  
Author(s):  
Neil Baril ◽  
Sumith Bandara ◽  
Linda Hoeglund ◽  
Nathan Henry ◽  
Alexander Brown ◽  
...  
Keyword(s):  
Strain Layer ◽  
Strain Layer Superlattice

Optical waveguide modulation in an (In,Ga)As strain layer superlattice structure

1992 ◽  
Author(s):  
K. T. Lee ◽  
C. R. Stanley ◽  
Richard M. De La Rue ◽  
P. A. Claxton
Keyword(s):  
Optical Waveguide ◽  
Superlattice Structure ◽  
Strain Layer ◽  
Strain Layer Superlattice

Type-II InAs/GaSb strain layer superlattice detectors for higher operating temperatures

2007 ◽  
Author(s):  
J. B. Rodriguez ◽  
E. Plis ◽  
S. J. Lee ◽  
H. Kim ◽  
G. Bishop ◽  
...  
Keyword(s):  
Type Ii ◽  
Strain Layer ◽  
Operating Temperatures ◽  
Strain Layer Superlattice

scholarly journals Modeling of electrical characteristics of midwave type II InAs∕GaSb strain layer superlattice diodes

2008 ◽  
Vol 104 (12) ◽  
pp. 124506 ◽  
Author(s):  
V. Gopal ◽  
E. Plis ◽  
J.-B. Rodriguez ◽  
C. E. Jones ◽  
L. Faraone ◽  
...  
Keyword(s):  
Type Ii ◽  
Electrical Characteristics ◽  
Strain Layer ◽  
Strain Layer Superlattice

Electrochemical sulphur passivation of InAs/GaSb strain layer superlattice detectors

2006 ◽  
Vol 42 (21) ◽  
pp. 1248 ◽  
Author(s):  
E. Plis ◽  
J.-B. Rodriguez ◽  
S.J. Lee ◽  
S. Krishna
Keyword(s):  
Strain Layer ◽  
Strain Layer Superlattice

Bias dependent dual band response from InAs∕Ga(In)Sb type II strain layer superlattice detectors

2007 ◽  
Vol 91 (26) ◽  
pp. 263504 ◽  
Author(s):  
A. Khoshakhlagh ◽  
J. B. Rodriguez ◽  
E. Plis ◽  
G. D. Bishop ◽  
Y. D. Sharma ◽  
...  
Keyword(s):  
Dual Band ◽  
Type Ii ◽  
Strain Layer ◽  
Strain Layer Superlattice
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