Cubic Zn x Mg 1-x O and Ni y Mg 1-y O thin films grown by molecular beam epitaxy for deep-UV optoelectronic applications

2010 ◽  
Author(s):  
J. W. Mares ◽  
C. R. Boutwell ◽  
A. Scheurer ◽  
W. V. Schoenfeld
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Uv ◽  
Optoelectronic Applications

scholarly journals Erratum: “Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors” [J. Appl. Phys. 122, 095302 (2017)]

2018 ◽  
Vol 124 (13) ◽  
pp. 139901
Author(s):  
Susmita Ghose ◽  
Shafiqur Rahman ◽  
Liang Hong ◽  
Juan Salvador Rojas-Ramirez ◽  
Hanbyul Jin ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Uv Photodetectors ◽  
Deep Uv

Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors

2017 ◽  
Vol 122 (9) ◽  
pp. 095302 ◽  
Author(s):  
Susmita Ghose ◽  
Shafiqur Rahman ◽  
Liang Hong ◽  
Juan Salvador Rojas-Ramirez ◽  
Hanbyul Jin ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Uv Photodetectors ◽  
Deep Uv

scholarly journals Atmospheric oxygen in Mn doped GaAs/GaAs(001) thin films grown by molecular beam epitaxy

2007 ◽  
Vol 301-302 ◽  
pp. 54-57 ◽  
Author(s):  
J.F. Xu ◽  
P.M. Thibado ◽  
C. Awo-Affouda ◽  
R. Moore ◽  
V.P. LaBella
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atmospheric Oxygen ◽  
Mn Doped

scholarly journals Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy

AIP Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 105020 ◽  
Author(s):  
Z. P. Zhang ◽  
Y. X. Song ◽  
Y. Y. Li ◽  
X. Y. Wu ◽  
Z. Y. S. Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Molecular Beam

As-Grown Superconducting SmFeAs(O,F) Thin Films by Molecular Beam Epitaxy

2012 ◽  
Vol 5 (5) ◽  
pp. 053101 ◽  
Author(s):  
Shinya Ueda ◽  
Soichiro Takeda ◽  
Shiro Takano ◽  
Michio Naito
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

Formation and Structure of Thin Mo Layers and Mo-Ni Multilayers on Ni(001) by Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
Y.H. Lee ◽  
R.P. Burns ◽  
J.B. Posthill ◽  
K.J. Bachmann
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Nucleation And Growth ◽  
Multilayer Heterostructures ◽  
Annealing Experiments ◽  
Small Period

AbstractThe growth of Mo overtayers and Mo-Ni multilayers on single crystal Ni(001) substrates is described. The nucleation and growth processes of these thin films were analyzed by LEED, XPS, AES and SEM and High Resolution AES investigations without breaking vacuum. Growth of Mo-Ni multilayer heterostructures on Ni(001) with ≈20Å periodicity is possible at low temperature (≈200 °C). At high temperature (≈550 °C) the growth proceeds by the Volmer-Weber mechanism preventing the deposition of small period multilayers. Annealing experiments on ultra-thin (<20Å) Mo overiayers deposited at 200 °C show an onset of interdiffusion at ≈ 550°C coupled to the generation of a new surface periodicity.

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