Diagnostics tools for subsurface damage characterization of ground silica parts

2009 ◽  
Author(s):  
P. Cormont ◽  
J. Neauport ◽  
N. Darbois ◽  
J. Destribats ◽  
C. Ambard ◽  
...  
2012 ◽  
Vol 39 (3) ◽  
pp. 0303007
Author(s):  
杨明红 Yang Minghong ◽  
赵元安 Zhao Yuan′an ◽  
易葵 Yi Kui ◽  
邵建达 Shao Jianda

1999 ◽  
Author(s):  
Andreas Wuttig ◽  
Joerg Steinert ◽  
Angela Duparre ◽  
Horst Truckenbrodt

2000 ◽  
Vol 631 ◽  
Author(s):  
Yoh-Ichiro Ogita ◽  
Ken-Ichi Kobayashi ◽  
Masaki Kurokawa ◽  
Hideyuki Kondo ◽  
Takeo Katoh

ABSTRACTThe UV/mm-wave technique composed of ultraviolet photoexcitation and millimeter wave probe was examined with photoconductivity amplitude (PCA) to characterize the slight subsurface damage induced by implanting H2+ ion into the subsurface at sub micron depth of Si wafers. The identical samples were also characterized using pulse photoconductivity amplitude (PPCA) obtained by another technique which is specified by blue laser photoexcitation and microwave probe. PCA decreased with increase of ion dose, which coincided well with the result in PPCA. PPCA decreased with increase of implantation energy as 90 to 120 keV, but PCA increased at 120keV. Both PCA and PPCA well reflected the damage at sub micron depth. PCA reflected damage in shallower depth compared to PPCA.


2018 ◽  
Vol 18 (3) ◽  
pp. 702-712 ◽  
Author(s):  
G.H. Majzoobi ◽  
M. Kashfi ◽  
N. Bonora ◽  
G. Iannitti ◽  
A. Ruggiero ◽  
...  

2014 ◽  
Vol 56 ◽  
pp. 821-829 ◽  
Author(s):  
Masoud Yekani Fard ◽  
Seid Mohammadali Sadat ◽  
Brian B. Raji ◽  
Aditi Chattopadhyay

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