Resonant tunneling diode optoelectronic integrated circuits

2010 ◽  
Author(s):  
C. N. Ironside ◽  
J. M. L. Figueiredo ◽  
B. Romeira ◽  
T. J. Slight ◽  
L. Wang ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Optoelectronic Integrated Circuits ◽  
Tunneling Diode

A Novel Resonant Tunneling Diode Based on AlGaAsP/GaAs and its Circuit Level Design

2013 ◽  
Vol 346 ◽  
pp. 35-41
Author(s):  
Qi Wang ◽  
Yang Li ◽  
Si Dan Du
Keyword(s):  
Integrated Circuits ◽  
Physical Model ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
High Frequency Oscillation ◽  
Material Structure ◽  
Nonlinear Fitting ◽  
Tunneling Diode ◽  
Oscillation Circuit ◽  
New Material

RTD (resonant tunneling diode) is a nonlinear device in nm scale level and operates at ps time level which is promising to be used into integrated circuits in the coming years. J.N.Schulmans physical model has beenproven to be suitable to emulate the device accurately. In this paper, a novelRTD based on new material structure is proposed which could reach a relative high PVCR (peak-valley-current-ratio). Then NFP (Nonlinear Fitting based on Physical model) method which is suitable to calculate the parameters for Schulmans physical model more quickly is proposed. At the end of paper the SPICE model of the proposed RTD is proven that it could emulate the RTD device, and shows its application ability in high frequency oscillation circuit.

Analysis of Spin-Polarized Current Using InSb/AlInSb Resonant Tunneling Diode

2012 ◽  
Vol E95.C (5) ◽  
pp. 871-878
Author(s):  
Masanari FUJITA ◽  
Mitsufumi SAITO ◽  
Michihiko SUHARA
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Tunneling Diode ◽  
Spin Polarized
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