Effect of heterostructure design on current-voltage characteristics in AlxGa1−xN/GaN double-barriers resonant tunneling diode

2012 ◽  
Vol 112 (11) ◽  
pp. 114305 ◽  
Author(s):  
M. Boucherit ◽  
A. Soltani ◽  
M. Rousseau ◽  
J.-L. Farvacque ◽  
J.-C. DeJaeger
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Tunneling Diode ◽  
Current Voltage ◽  
Current Voltage Characteristics

Simulation of Polarization Effect in GaN/AlN Resonant Tunneling Diode

2013 ◽  
Vol 774-776 ◽  
pp. 691-694
Author(s):  
Nai Yun Tang
Keyword(s):  
Electronic Properties ◽  
Resonant Tunneling ◽  
Polarization Effect ◽  
Resonant Tunneling Diode ◽  
Band Diagram ◽  
Poisson Equations ◽  
Tunneling Diode ◽  
Current Voltage ◽  
Self Consistent ◽  
Current Voltage Characteristics

Influence of polarization effect on current across GaN/AlNresonant tunneling diode (RTD) is simulated by self-consistent calculations ofSchrödinger and Poisson equations. When taking into account polarization chargesat the heterointerface, the band diagram and electronic properties of RTD areobviously changed. As a result, the current-voltage characteristics showsasymmetrical phenomenon. As the polarization effect is enhanced, the resonancepeak is shifted accordingly and even disappears.

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