Process technology for monolithic high-speed Schottky/resonant tunneling diode logic integrated circuits

1996 ◽  
Vol 14 (6) ◽  
pp. 3497 ◽  
Author(s):  
P.-M. Lei
Keyword(s):  
Integrated Circuits ◽  
Resonant Tunneling ◽  
High Speed ◽  
Resonant Tunneling Diode ◽  
Process Technology ◽  
Tunneling Diode

scholarly journals Numerical Modelling of a Graphene - Resonant Tunneling Diode as a High Frequency Oscillator

2019 ◽  
Author(s):  
Shakirudeen Lasisi
Keyword(s):  
High Frequency ◽  
Resonant Tunneling ◽  
High Speed ◽  
Hexagonal Boron Nitride ◽  
Domain Boundary ◽  
Resonant Tunneling Diode ◽  
Total Output ◽  
High Electron ◽  
Tunneling Diode ◽  
Output Synchronization

New solid-state sources of Gigahertz-Terahertz electromagnetic radiation continue to have many applications in high-speed electronics, communications, security, and medicine. To develop new devices, it is important to understand the coupling of such high-frequency sources not only with each other but also with their environment e.g. to achieve increased power output, synchronization, and to control interference. Using Graphene-based materials is particularly promising due to its high electron mobility and configurability of the device structures. However, accurately modelling its electromagnetic behavior computationally along with the inherent complexities of the device itself (e.g. non-linearities, and quantum effects) can be quite challenging using current tools. To address this, we use a simplified approximate model to reduce the complexity of the structure and derive new formulations that describe its electromagnetic and intrinsic behaviours. In this poster, we report new formulations, finite element spaces and general progress in modelling a graphene hexagonal-boron-nitride resonant tunneling diode (GRTD) using the time-domain boundary element method. We also explore the possibility of mutual coupling and synchronization between two GRTD devices as well as their radiation patterns and total output power.

Resonant tunneling diode optoelectronic integrated circuits

2010 ◽  
Author(s):  
C. N. Ironside ◽  
J. M. L. Figueiredo ◽  
B. Romeira ◽  
T. J. Slight ◽  
L. Wang ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Optoelectronic Integrated Circuits ◽  
Tunneling Diode

A Novel Resonant Tunneling Diode Based on AlGaAsP/GaAs and its Circuit Level Design

2013 ◽  
Vol 346 ◽  
pp. 35-41
Author(s):  
Qi Wang ◽  
Yang Li ◽  
Si Dan Du
Keyword(s):  
Integrated Circuits ◽  
Physical Model ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
High Frequency Oscillation ◽  
Material Structure ◽  
Nonlinear Fitting ◽  
Tunneling Diode ◽  
Oscillation Circuit ◽  
New Material

RTD (resonant tunneling diode) is a nonlinear device in nm scale level and operates at ps time level which is promising to be used into integrated circuits in the coming years. J.N.Schulmans physical model has beenproven to be suitable to emulate the device accurately. In this paper, a novelRTD based on new material structure is proposed which could reach a relative high PVCR (peak-valley-current-ratio). Then NFP (Nonlinear Fitting based on Physical model) method which is suitable to calculate the parameters for Schulmans physical model more quickly is proposed. At the end of paper the SPICE model of the proposed RTD is proven that it could emulate the RTD device, and shows its application ability in high frequency oscillation circuit.

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