Improved hydrogen detection sensitivity of a Pt/Ga 2 O 3 /GaN diode

2009 ◽  
Author(s):  
Jheng-Tai Yan ◽  
Chun-Yen Tseng ◽  
Chia-Hsun Chen ◽  
Ching-Ting Lee
Keyword(s):  
Detection Sensitivity ◽  
Hydrogen Detection

Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes

2009 ◽  
Vol 94 (21) ◽  
pp. 212108 ◽  
Author(s):  
Yu-Lin Wang ◽  
F. Ren ◽  
U. Zhang ◽  
Q. Sun ◽  
C. D. Yerino ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Detection Sensitivity ◽  
Hydrogen Detection

Effect of Coated Platinum Thickness on Hydrogen Detection Sensitivity of Graphene-Based Sensors

2011 ◽  
Vol 14 (7) ◽  
pp. K43 ◽  
Author(s):  
Byung Hwan Chu ◽  
Justin Nicolosi ◽  
C. F. Lo ◽  
W. Strupinski ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Detection Sensitivity ◽  
Hydrogen Detection

Palladium configuration dependence of hydrogen detection sensitivity based on graphene FET for breath analysis

2018 ◽  
Vol 57 (4S) ◽  
pp. 04FP05 ◽  
Author(s):  
Yuri Sakamoto ◽  
Kohei Uemura ◽  
Takashi Ikuta ◽  
Kenzo Maehashi
Keyword(s):  
Breath Analysis ◽  
Detection Sensitivity ◽  
Hydrogen Detection ◽  
Graphene Fet

Hydrogen Detection by a GaAs-Based Transistor with a Palladium (Pd) Thin Film Gate Structure

2006 ◽  
Vol 15-17 ◽  
pp. 275-280 ◽  
Author(s):  
C.W. Hung ◽  
S.Y. Cheng ◽  
Kun Wei Lin ◽  
Y.Y. Tsai ◽  
P.H. Lai ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Hydrogen Sensor ◽  
Detection Sensitivity ◽  
Density Level ◽  
Hydrogen Atoms ◽  
Hydrogen Detection ◽  
High Hydrogen ◽  
Sensor Applications ◽  
Hydrogen Molecules

By combining the advantages of a catalytic palladium (Pd thin film) with a high-performance GaAs-based transistor, an interesting hydrogen sensor is fabricated and demonstrated. For the studied device, a 50 Å undoped GaAs cap layer is grown to prevent the Al0.24Ga0.76As Schottky layer from oxidizing and to suppress the Fermi level pinning effect. The sensing mechanism can be described as the dissociation of hydrogen molecules and the polarization of hydrogen atoms. The drain-source variation ΔIDS is caused by the polarization of a dipolar layer resulting in the modulation of the gate potential and carrier density level. Experimentally, a high hydrogen detection sensitivity SJ value of 275.8 mA/mm-ppm H2/air can be obtained under the 14ppm H2/air gas. Even under a very low hydrogen concentration (≤4.3 ppm H2/air) at 303K, the considerable current variation can be observed. Moreover, the fast hydrogen response is found. Therefore, the studied device reveals the promise for high-performance hydrogen sensor applications.

Erratum: “Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes” [Appl. Phys. Lett. 94, 212108 (2009)]

2009 ◽  
Vol 95 (1) ◽  
pp. 019903 ◽  
Author(s):  
Yu-Lin Wang ◽  
F. Ren ◽  
Yu Zhang ◽  
Q. Sun ◽  
C. D. Yerino ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Detection Sensitivity ◽  
Hydrogen Detection

Applications of SIMS to electronic materials and devices

1992 ◽  
Vol 50 (2) ◽  
pp. 1682-1683
Author(s):  
S.F. Corcoran
Keyword(s):  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Device ◽  
Electronic Materials ◽  
Profile Analysis ◽  
Semiconductor Industry ◽  
Small Diameter ◽  
Depth Resolution ◽  
Detection Sensitivity

Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.

Ferromagnetic Resonance Biosensor for Homogeneous and Volumetric Detection of DNA

2017 ◽  
Author(s):  
Bo Tian ◽  
Peter Svedlindh ◽  
Mattias Strömberg ◽  
Erik Wetterskog
Keyword(s):  
Magnetic Nanoparticles ◽  
Ferromagnetic Resonance ◽  
Limit Of Detection ◽  
Point Of Care ◽  
Rolling Circle Amplification ◽  
Resonance Field ◽  
Isothermal Amplification ◽  
Detection Sensitivity ◽  
Serum Samples ◽  
Rolling Circle

In this work, we demonstrate for the first time, a ferromagnetic resonance (FMR) based homogeneous and volumetric biosensor for magnetic label detection. Two different isothermal amplification methods, <i>i.e.</i>, rolling circle amplification (RCA) and loop-mediated isothermal amplification (LAMP) are adopted and combined with a standard electron paramagnetic resonance (EPR) spectrometer for FMR biosensing. For RCA-based FMR biosensor, binding of RCA products of a synthetic Vibrio cholerae target DNA sequence gives rise to the formation of aggregates of magnetic nanoparticles. Immobilization of nanoparticles within the aggregates leads to a decrease of the net anisotropy of the system and a concomitant increase of the resonance field. A limit of detection of 1 pM is obtained with an average coefficient of variation of 0.16%, which is superior to the performance of other reported RCA-based magnetic biosensors. For LAMP-based sensing, a synthetic Zika virus target oligonucleotide is amplified and detected in 20% serum samples. Immobilization of magnetic nanoparticles is induced by their co-precipitation with Mg<sub>2</sub>P<sub>2</sub>O<sub>7</sub> (a by-product of LAMP) and provides a detection sensitivity of 100 aM. The fast measurement, high sensitivity and miniaturization potential of the proposed FMR biosensing technology makes it a promising candidate for designing future point-of-care devices.<br>

Fast Turn-around Failure Analysis of Metal Interconnection Using FIB and LA ICP-MS

2010 ◽  
Author(s):  
Zixiao Pan ◽  
Wei Wei ◽  
Fuhe Li
Keyword(s):  
Failure Analysis ◽  
Inductively Coupled Plasma ◽  
Structural Damage ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Detection Sensitivity ◽  
Chemical Contamination ◽  
Inductively Coupled ◽  
Minimal Sample ◽  
Icp Ms

Abstract This paper introduces our effort in failure analysis of a 200 nm thick metal interconnection on a glass substrate and covered with a passivation layer. Structural damage in localized areas of the metal interconnections was observed with the aid of focused ion beam (FIB) cross-sectioning. Laser ablation inductively coupled plasma mass spectroscopy (LA ICP-MS) was then applied to the problematic areas on the interconnection for chemical survey. LA ICP-MS showed direct evidence of localized chemical contamination, which has likely led to corrosion (or over-etching) of the metal interconnection and the assembly failure. Due to the high detection sensitivity of LA ICP-MS and its compatibility with insulating material analysis, minimal sample preparation is required. As a result, the combination of FIB and LA ICP-MS enabled successful meso-scale failure analysis with fast turnaround and reasonable cost.

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