High performance organic field-effect transistors using high-Κ dielectrics grown by atomic layer deposition (ALD)

Mapping Intimacies ◽

10.1117/12.735238 ◽

2007 ◽

Cited By ~ 1

Author(s):

Xiao-Hong Zhang ◽

Benoit Domercq ◽

Xudong Wang ◽

Seunghyup Yoo ◽

Takeshi Kondo ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Atomic Layer ◽

Organic Field Effect Transistors ◽

Layer Deposition

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Organic Field-Effect Transistors with a Bilayer Gate Dielectric Comprising an Oxide Nanolaminate Grown by Atomic Layer Deposition

ACS Applied Materials & Interfaces ◽

10.1021/acsami.6b10603 ◽

2016 ◽

Vol 8 (44) ◽

pp. 29872-29876 ◽

Cited By ~ 12

Author(s):

Cheng-Yin Wang ◽

Canek Fuentes-Hernandez ◽

Minseong Yun ◽

Ankit Singh ◽

Amir Dindar ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Atomic Layer ◽

Organic Field Effect Transistors ◽

Layer Deposition

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Low-voltage solution-processed n-channel organic field-effect transistors with high-k HfO2 gate dielectrics grown by atomic layer deposition

Applied Physics Letters ◽

10.1063/1.3269579 ◽

2009 ◽

Vol 95 (22) ◽

pp. 223303 ◽

Cited By ~ 33

Author(s):

Shree Prakash Tiwari ◽

Xiao-Hong Zhang ◽

William J. Potscavage ◽

Bernard Kippelen

Keyword(s):

Atomic Layer Deposition ◽

Field Effect ◽

Low Voltage ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Atomic Layer ◽

Organic Field Effect Transistors ◽

Solution Processed ◽

Layer Deposition ◽

High K

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Thin-film passivation by atomic layer deposition for organic field-effect transistors

Applied Physics Letters ◽

10.1063/1.3000017 ◽

2008 ◽

Vol 93 (16) ◽

pp. 163304 ◽

Cited By ~ 26

Author(s):

Hayoung Jeon ◽

Kwonwoo Shin ◽

Chanwoo Yang ◽

Chan Eon Park ◽

Sang-Hee Ko Park

Keyword(s):

Thin Film ◽

Atomic Layer Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Organic Field Effect Transistors ◽

Layer Deposition

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High-performance pentacene field-effect transistors using Al2O3 gate dielectrics prepared by atomic layer deposition (ALD)

Organic Electronics ◽

10.1016/j.orgel.2007.06.009 ◽

2007 ◽

Vol 8 (6) ◽

pp. 718-726 ◽

Cited By ~ 117

Author(s):

Xiao-Hong Zhang ◽

Benoit Domercq ◽

Xudong Wang ◽

Seunghyup Yoo ◽

Takeshi Kondo ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Field Effect ◽

High Performance ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Atomic Layer ◽

Layer Deposition

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Efficient Charge Injection in Organic Field-Effect Transistors Enabled by Low-Temperature Atomic Layer Deposition of Ultrathin VOx Interlayer

Advanced Functional Materials ◽

10.1002/adfm.201600482 ◽

2016 ◽

Vol 26 (25) ◽

pp. 4456-4463 ◽

Cited By ~ 24

Author(s):

Yuanhong Gao ◽

Youdong Shao ◽

Lijia Yan ◽

Hao Li ◽

Yantao Su ◽

...

Keyword(s):

Low Temperature ◽

Atomic Layer Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Injection ◽

Atomic Layer ◽

Organic Field Effect Transistors ◽

Layer Deposition ◽

Efficient Charge

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Metal/Organic Interfaces: Efficient Charge Injection in Organic Field-Effect Transistors Enabled by Low-Temperature Atomic Layer Deposition of Ultrathin VOx Interlayer (Adv. Funct. Mater. 25/2016)

Advanced Functional Materials ◽

10.1002/adfm.201670160 ◽

2016 ◽

Vol 26 (25) ◽

pp. 4615-4615

Author(s):

Yuanhong Gao ◽

Youdong Shao ◽

Lijia Yan ◽

Hao Li ◽

Yantao Su ◽

...

Keyword(s):

Low Temperature ◽

Atomic Layer Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Organic Field Effect Transistors ◽

Organic Interfaces ◽

Layer Deposition ◽

Efficient Charge ◽

Metal Organic

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The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal–Oxide–Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c009 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C009 ◽

Cited By ~ 5

Author(s):

Shuang-Yuan Chen ◽

Hung-Wen Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Layer Deposition ◽

Hot Carrier Stress

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Homogeneous dual-gate MoS2 field-effect transistors integrated by atomic layer deposition-based film synthesis

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-020-03113-3 ◽

2020 ◽

Vol 31 (7) ◽

pp. 5485-5491 ◽

Cited By ~ 1

Author(s):

Tao Chen ◽

Yang Wang ◽

Tianbao Zhang ◽

Hao Zhu ◽

Lin Chen ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Layer Deposition ◽

Dual Gate ◽

Film Synthesis

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GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition

Journal of Electronic Materials ◽

10.1007/s11664-004-0220-9 ◽

2004 ◽

Vol 33 (8) ◽

pp. 912-915 ◽

Cited By ~ 12

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

B. Yang ◽

J. Kwo ◽

H. -J. L. Gossmann ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition

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Atomic layer deposition effect on the electrical properties of Al2O3-passivated PbS quantum dot field-effect transistors

Applied Physics Letters ◽

10.1063/1.4914304 ◽

2015 ◽

Vol 106 (9) ◽

pp. 093507 ◽

Cited By ~ 17

Author(s):

Hye-Mi So ◽

Hyekyoung Choi ◽

Hyung Cheoul Shim ◽

Seung-Mo Lee ◽

Sohee Jeong ◽

...

Keyword(s):

Electrical Properties ◽

Atomic Layer Deposition ◽

Quantum Dot ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Layer Deposition ◽

Deposition Effect ◽

Pbs Quantum Dot

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