Light emission and structural properties of undoped and erbium-doped nanostructured silica with SnO 2 nanoparticles

2007 ◽  
Author(s):  
Sergio Brovelli ◽  
Norberto Chiodini ◽  
Alessandro Lauria ◽  
Francesco Meinardi ◽  
Angelo Monguzzi ◽  
...  
Keyword(s):  
Structural Properties ◽  
Light Emission ◽  
Erbium Doped ◽  
Nanostructured Silica

Visible Light Emission from Erbium Doped Yttria Stabilized Zirconia

2003 ◽  
Vol 789 ◽  
Author(s):  
Michael Cross ◽  
Walter Varhue
Keyword(s):  
Band Gap ◽  
Light Emission ◽  
Green Light ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Rare Earth Ion ◽  
Device Structure ◽  
Insulating Layer ◽  
Light Emitting ◽  
Erbium Doped

ABSTRACT: One of the major shortcomings of silicon (Si) as a semiconductor material is its inability to yield efficient light emission. There has been a continued interest in adding rare earth ion impurities such as erbium (Er) to the Si lattice to act as light emitting centers. The low band gap of Si however has complicated this practice by quenching and absorbing this possible emission. Increasing the band gap of the host has been successfully tried in the case of gallium nitride (GaN) [1] and Si-rich oxide (SRO) [2] alloys. A similar approach has been tried here, where Er oxide (ErOx) nanocrystals have been formed in a yttria stabilized zirconia (YSZ) host deposited on a Si (100) substrate. The YSZ is deposited as a heteroepitaxial, insulating layer on the Si substrate by a reactive sputtering technique. The Er is also incorporated by a sputtering process from a metallic target and its placement in the YSZ host can be easily controlled. The device structure formed is a simple metal contact/insulator/phosphor sandwich. The device has been found to emit visible green light at low bias voltages. The advantage of this material is that it is much more structured than SiO2 which can theoretically lead to higher emission intensity.

scholarly journals Triboluminescence of Centrosymmetric Lanthanide β-Diketonate Complexes with Aggregation-Induced Emission

Molecules ◽  
2019 ◽  
Vol 24 (4) ◽  
pp. 662 ◽  
Author(s):  
Ho-Yin Wong ◽  
Wesley Chan ◽  
Ga-Lai Law
Keyword(s):  
Symmetric Space ◽  
Structural Properties ◽  
Light Emission ◽  
Molecular Packing ◽  
Mechanical Forces ◽  
Space Group ◽  
Aggregation Induced Emission ◽  
Crystal Structural

Triboluminescence (TL) is a form of light emission induced upon mechanical forces on the material. However, our understanding of this phenomenon is still unclear and more examples are therefore needed in order to elucidate its mechanism. In this work, two types of TL complexes, [Eu(pp-dbm-Cl2)3phen] and [Eu(mm-dbm-Cl2)3phen], which also displays aggregation-induced emission (AIE) were synthesized and investigated for its photo-physical and crystal structural properties. These complexes were crystallized in a centro-symmetric space group P21/n, and remarkably, displayed TL upon grinding that may be due to the presence of extensive π···π, C-H···π and C-H···Cl-C interactions in the close molecular packing of its structure. This rare example deviates from the widely accepted mechanism of TL, hence widening the scope of our understanding in the area.

scholarly journals Si-rich-SiO2 layers with high excess silicon content: Light emission and structural properties

2009 ◽  
Vol 2 (2) ◽  
pp. 147-159
Author(s):  
L. Khomenkova ◽  
N. Korsunska ◽  
M. Baran ◽  
T. Stara ◽  
V. Yukhymchuk ◽  
...  
Keyword(s):  
Structural Properties ◽  
Silicon Content ◽  
Light Emission ◽  
Excess Silicon

scholarly journals Enhanced light emission from erbium doped silicon nitride in plasmonic metal-insulator-metal structures

2009 ◽  
Vol 17 (23) ◽  
pp. 20642 ◽  
Author(s):  
Yiyang Gong ◽  
Selçuk Yerci ◽  
Rui Li ◽  
Luca Dal Negro ◽  
Jelena Vuckovic
Keyword(s):  
Silicon Nitride ◽  
Light Emission ◽  
Metal Insulator ◽  
Metal Structures ◽  
Metal Insulator Metal ◽  
Erbium Doped ◽  
Doped Silicon

Light emission from erbium-doped nanocrystalline silicon/silicon dioxide layers under strong optical excitation

2005 ◽  
Author(s):  
Pavel K. Kashkarov ◽  
Olga A. Shalygina ◽  
Denis M. Zhigunov ◽  
Dmitri A. Sapun ◽  
Sergei A. Teterukov ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Light Emission ◽  
Optical Excitation ◽  
Nanocrystalline Silicon ◽  
Erbium Doped ◽  
Silicon Silicon

Light Emission From Erbium Doped Si1-x XGe1Heterostructures

1998 ◽  
Vol 533 ◽  
Author(s):  
J H Evans-Freeman ◽  
A T Naveed ◽  
M Q Huda ◽  
A R eaker ◽  
D C oughton ◽  
...  
Keyword(s):  
Quantum Well ◽  
Concentration Profile ◽  
Light Emission ◽  
Forward Bias ◽  
Silicon Layer ◽  
Spatial Location ◽  
Detailed Mechanism ◽  
Erbium Doped ◽  
Er Doped

AbstractUHVCVD-grown SiO.s 7Ge0.13/Si heterostructures have been implanted with erbium, and photoluminescence and electroluminescence centred on 1.54ýim have been studied. Implantation conditions were chosen so that the erbium concentration profile was flat over the spatial location of the SiGe quantum well region. We demonstrate that the technology of implantation and regrowth is feasible even when Si/SiGe interfaces are present. We have obtained more intense photoluminescence from erbium implanted SiGe heterostructures than that from a silicon layer implanted with a higher erbium dose. We report forward bias electroluminescence from the Er doped SiGe/Si heterostructures; the photoluminescence and electroluminescence from these structures demonstrates that the detailed mechanism of excitation is different from the Er:Si case.

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