Novel method of under-etch defect detection for contact layers based on Si substrate using optic wafer inspection tools

2007 ◽  
Author(s):  
Byoung-Ho Lee ◽  
Jin-Seo Choi ◽  
Soo-Bok Chin ◽  
Do-Hyun Cho ◽  
Chang-Lyong Song
Keyword(s):  
Defect Detection ◽  
Si Substrate ◽  
Wafer Inspection ◽  
Novel Method

A universal defect detection approach for various types of fabrics based on the Elo-rating algorithm of the integral image

2019 ◽  
Vol 89 (21-22) ◽  
pp. 4766-4793 ◽  
Author(s):  
Xuejuan Kang ◽  
Erhu Zhang
Keyword(s):  
Defect Detection ◽  
Detection Rate ◽  
Threshold Value ◽  
Detection Time ◽  
Integral Image ◽  
High Detection Rate ◽  
Detection Approach ◽  
Fabric Defect ◽  
Novel Method ◽  
Dyed Fabric

In order to overcome the shortcoming that a fabric defect detection method can only fit into a certain type of fabric, this paper presents a novel method by integrating the idea of the integral image into the Elo-rating algorithm (IIER), which can detect the defects of various types of fabric speedily. Firstly, the golden sub-blocks are extracted from defect-free images. The whole images are divided into many sub-blocks, and the integral images of these sub-blocks are obtained. Next, the R sub-blocks are randomly selected from these integral sub-blocks, and each block is assigned an initial Elo point. Afterwards, the R sub-blocks are matched against all sub-blocks and the Elo points are updated after each competition. Finally, regions with bright defects accumulate high Elo points and regions with dark defects accumulate low Elo points. Thus, the threshold value image can be obtained by thresholding the final Elo points, in which white, gray and black regions correspond to bright, dark-defect and defect-free regions, respectively. The performance of the proposed method is evaluated on databases of three categories of fabric, namely raw fabric, yarn-dyed fabric and patterned fabric. The experimental results show that the IIER is a universal algorithm, which has high detection rate for different types of fabrics; in particular, the average correct detection rate can reach 100% for dot-patterned fabric. In addition, the detection time can be significantly reduced comparing with the Elo-rating algorithm (ER). Particularly for star-patterned fabric, the average detection time per image is 24.18 seconds less than the ER.

Preparation of high-density TiO2 nanodots on Si substrate by a novel method

2008 ◽  
Vol 62 (12-13) ◽  
pp. 1965-1968 ◽  
Author(s):  
Ming Luo ◽  
Kui Cheng ◽  
Wenjian Weng ◽  
Chenlu Song ◽  
Piyi Du ◽  
...  
Keyword(s):  
High Density ◽  
Si Substrate ◽  
Novel Method

scholarly journals Surface Defect System for Long Product Manufacturing Using Differential Topographic Images

Sensors ◽  
2020 ◽  
Vol 20 (7) ◽  
pp. 2142
Author(s):  
F.J. delaCalle Herrero ◽  
Daniel F. García ◽  
Rubén Usamentiaga
Keyword(s):  
Defect Detection ◽  
Surface Defect ◽  
International Standards ◽  
Surface Inspection ◽  
High Speeds ◽  
Surface Defect Detection ◽  
Inspection Systems ◽  
Product Manufacturing ◽  
Novel Method ◽  
Very High

Current industrial products must meet quality requirements defined by international standards. Most commercial surface inspection systems give qualitative detections after a long, cumbersome and very expensive configuration process made by the seller company. In this paper, a new surface defect detection method is proposed based on 3D laser reconstruction. The method compares the long products, scan by scan, with their desired shape and produces differential topographic images of the surface at very high speeds. This work proposes a novel method where the values of the pixels in the images have a direct translation to real-world dimensions, which enables a detection based on the tolerances defined by international standards. These images are processed using computer vision techniques to detect defects and filter erroneous detections using both statistical distributions and a multilayer perceptron. Moreover, a systematic configuration procedure is proposed that is repeatable and can be performed by the manufacturer. The method has been tested using train track rails, which reports better results than two photometric systems including one commercial system, in both defect detection and erroneous detection rate. The method has been validated using a surface inspection rail pattern showing excellent performance.

Growth of epitaxial ZnO thin film by oxidation of epitaxial ZnS thin films on Si(111)

2001 ◽  
Vol 15 (28n30) ◽  
pp. 3861-3864
Author(s):  
A. Miyake ◽  
H. Kominami ◽  
T. Aoki ◽  
H. Tatsuoka ◽  
H. Kuwabara ◽  
...  
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Epitaxial Films ◽  
Driving Voltage ◽  
Zno Thin Film ◽  
Si Substrate ◽  
Ultraviolet Emission ◽  
Near Ultraviolet ◽  
Novel Method ◽  
First Time

The growth of epitaxial ZnO thin film on Si substrate by the oxidation of epitaxial ZnS film is a novel method and we are reporting this first time. The merits of the use of Si substrate are to make driving voltage in LED lower and less expensive than sapphire substrate. In this study, the epitaxial ZnO thin film could be successfully grown on the Si substrate. The epitaxial films showed a strong near ultraviolet emission peaked at around 3.32 eV at room temperature under 325 nm excitation.

scholarly journals Image Wafer Inspection based on Template Matching

2020 ◽  
Author(s):  
Massimiliano Barone
Keyword(s):  
Defect Detection ◽  
Template Matching ◽  
Physical Space ◽  
Visual Quality ◽  
Layout Design ◽  
Wafer Inspection ◽  
Prior Art ◽  
Matching Technique ◽  
Wafer Manufacturing

This paper presents a template matching technique for detecting defects in VLSI wafer images. This method is based on traditional techniques of image analysis and image registration, but it combines the prior art of image wafer inspection in a new way, using prior knowledge like the design layout of VLSI wafer manufacturing process. This technique requires a golden template of the patterned wafer image under inspection which is obtained from the wafer image itself mixed to the layout design schemes. First a mapping between physical space and pixel space is needed. Then a template matching is applied for a more accurate alignment between wafer device and template. Finally, a segmented comparison is used for finding out possible defects. Results of the proposed method are presented in terms of visual quality of defect detection, any misalignment at topology level and number of correctly detected defective devices.

Sign in / Sign up

Export Citation Format

Share Document