Characterization of thin films and bulk materials for DUV optical components

2006 ◽  
Author(s):  
Sven Schröder ◽  
Mathias Kamprath ◽  
Angela Duparré
1995 ◽  
Vol 61 (3) ◽  
pp. 253-261 ◽  
Author(s):  
O.W. K�ding ◽  
H. Skurk ◽  
A.A. Maznev ◽  
E. Matthias

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 651
Author(s):  
Bruno Magalhaes ◽  
Stefan Engelhardt ◽  
Christian Molin ◽  
Sylvia E. Gebhardt ◽  
Kornelius Nielsch ◽  
...  

Substantial efforts are dedicated worldwide to use lead-free materials for environmentally friendly processes in electrocaloric cooling. Whereas investigations on bulk materials showed that Na0.5Bi0.5TiO3 (NBT)-based compounds might be suitable for such applications, our aim is to clarify the feasibility of epitaxial NBT-based thin films for more detailed investigations on the correlation between the composition, microstructure, and functional properties. Therefore, NBT-based thin films were grown by pulsed laser deposition on different single crystalline substrates using a thin epitaxial La0.5Sr0.5CoO3 layer as the bottom electrode for subsequent electric measurements. Structural characterization revealed an undisturbed epitaxial growth of NBT on lattice-matching substrates with a columnar microstructure, but high roughness and increasing grain size with larger film thickness. Dielectric measurements indicate a shift of the phase transition to lower temperatures compared to bulk samples as well as a reduced permittivity and increased losses at higher temperatures. Whereas polarization loops taken at −100 °C revealed a distinct ferroelectric behavior, room temperature data showed a significant resistive contribution in these measurements. Leakage current studies confirmed a non-negligible conductivity between the electrodes, thus preventing an indirect characterization of the electrocaloric properties of these films.


1995 ◽  
Vol 61 (3) ◽  
pp. 253-261 ◽  
Author(s):  
O. W. K�ding ◽  
H. Skurk ◽  
A. A. Maznev ◽  
E. Matthias

Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.


2017 ◽  
Vol 137 (1) ◽  
pp. 46-47
Author(s):  
Takeshi Kohno ◽  
Masato Mihara ◽  
Ataru Tanabe ◽  
Takashi Abe ◽  
Masanori Okuyama ◽  
...  

2011 ◽  
Vol E94-C (2) ◽  
pp. 157-163 ◽  
Author(s):  
Masakazu MUROYAMA ◽  
Ayako TAJIRI ◽  
Kyoko ICHIDA ◽  
Seiji YOKOKURA ◽  
Kuniaki TANAKA ◽  
...  

2018 ◽  
Vol 14 (2) ◽  
pp. 221-234
Author(s):  
Ahmed Namah Mohamed ◽  
◽  
Jafer Fahdel Odah ◽  
Haider Tawfiq Naeem

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