A new algorithm for SEM critical dimension measurements for differentiating between lines and spaces in dense line/space patterns without tone dependence

2006 ◽  
Author(s):  
J. Matsumoto ◽  
Y. Ogiso ◽  
M. Sekine ◽  
T. Iwai ◽  
J. Whittey
Keyword(s):  
Critical Dimension ◽  
Dense Line ◽  
Line Space

scholarly journals Resist-Free Directed Self-Assembly Chemo-Epitaxy Approach for Line/Space Patterning

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2443
Author(s):  
Tommaso Giammaria ◽  
Ahmed Gharbi ◽  
Anne Paquet ◽  
Paul Nealey ◽  
Raluca Tiron
Keyword(s):  
Self Assembly ◽  
Silicon Oxide ◽  
Good Control ◽  
Critical Dimension ◽  
Semiconductor Technology ◽  
Line Edge Roughness ◽  
Neutral Layer ◽  
Edge Roughness ◽  
Chemical Pattern ◽  
Line Space

This work reports a novel, simple, and resist-free chemo-epitaxy process permitting the directed self-assembly (DSA) of lamella polystyrene-block-polymethylmethacrylate (PS-b-PMMA) block copolymers (BCPs) on a 300 mm wafer. 193i lithography is used to manufacture topographical guiding silicon oxide line/space patterns. The critical dimension (CD) of the silicon oxide line obtained can be easily trimmed by means of wet or dry etching: it allows a good control of the CD that permits finely tuning the guideline and the background dimensions. The chemical pattern that permits the DSA of the BCP is formed by a polystyrene (PS) guide and brush layers obtained with the grafting of the neutral layer polystyrene-random-polymethylmethacrylate (PS-r-PMMA). Moreover, data regarding the line edge roughness (LER) and line width roughness (LWR) are discussed with reference to the literature and to the stringent requirements of semiconductor technology.

Study on optimization of annular off-axis illumination using Taguchi method for 0.35 μm dense line/space

1997 ◽  
Vol 35 (1-4) ◽  
pp. 461-464
Author(s):  
Wen-an Loong ◽  
Jin-chi Tseng ◽  
Tzu-ching Chen ◽  
Chien-an Lung
Keyword(s):  
Taguchi Method ◽  
Dense Line ◽  
Line Space

Information capacity and bandwidth limitations in the SEM

1989 ◽  
Vol 47 ◽  
pp. 84-85
Author(s):  
D. C. Joy ◽  
R. D. Bunn
Keyword(s):  
Signal To Noise Ratio ◽  
Critical Dimension ◽  
Information Capacity ◽  
Acquisition Time ◽  
Signal To Noise ◽  
Sem Image ◽  
Probe Size ◽  
Minimum Number ◽  
Noise Ratio ◽  
Signal Channel

The information available from an SEM image is limited both by the inherent signal to noise ratio that characterizes the image and as a result of the transformations that it may undergo as it is passed through the amplifying circuits of the instrument. In applications such as Critical Dimension Metrology it is necessary to be able to quantify these limitations in order to be able to assess the likely precision of any measurement made with the microscope.The information capacity of an SEM signal, defined as the minimum number of bits needed to encode the output signal, depends on the signal to noise ratio of the image - which in turn depends on the probe size and source brightness and acquisition time per pixel - and on the efficiency of the specimen in producing the signal that is being observed. A detailed analysis of the secondary electron case shows that the information capacity C (bits/pixel) of the SEM signal channel could be written as :

Analysis of Retention Time Degradation Caused by Electrostatic Potential Variation between Adjacent Bit-Line and Adjacent Contact Node in DRAM

2016 ◽  
Author(s):  
Jungil Mok ◽  
Byungki Kang ◽  
Daesun Kim ◽  
Hongsun Hwang ◽  
Sangjae Rhee ◽  
...  
Keyword(s):  
Electric Field ◽  
Electrostatic Potential ◽  
Critical Dimension ◽  
Data Retention ◽  
Signal Line ◽  
Adjacent Node ◽  
Storage Node ◽  
Retention Characteristics ◽  
Node Voltage ◽  
The Relationship

Abstract Systematic retention failure related on the adjacent electrostatic potential is studied with sub 20nm DRAM. Unlike traditional retention failures which are caused by gate induced drain leakage or junction leakage, this failure is influenced by the combination of adjacent signal line and adjacent contact node voltage. As the critical dimension between adjacent active and the adjacent signal line and contact node is scaled down, the effect of electric field caused by adjacent node on storage node is increased gradually. In this paper, we will show that the relationship between the combination electric field of adjacent nodes and the data retention characteristics and we will demonstrate the mechanism based on the electrical analysis and 3D TCAD simulation simultaneously.

TEM Sample Preparation by Single-Sided Low-Energy Ion Beam Etching

2011 ◽  
Author(s):  
Liew Kaeng Nan ◽  
Lee Meng Lung
Keyword(s):  
Sample Preparation ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Critical Dimension ◽  
Low Energy ◽  
Ex Situ ◽  
Good Image Quality ◽  
Ion Beam Etching ◽  
Device Structures ◽  
Common Technique

Abstract Conventional FIB ex-situ lift-out is the most common technique for TEM sample preparation. However, the scaling of semiconductor device structures poses great challenge to the method since the critical dimension of device becomes smaller than normal TEM sample thickness. In this paper, a technique combining 30 keV FIB milling and 3 keV ion beam etching is introduced to prepare the TEM specimen. It can be used by existing FIBs that are not equipped with low-energy ion beam. By this method, the overlapping pattern can be eliminated while maintaining good image quality.

Investigation of the Process of Plasma Through Etching of HkMG Stack of Nanotransistor with a 32-nm Critical Dimension

2018 ◽  
Vol 47 (5) ◽  
pp. 44-50
Author(s):  
A. Myakonkikh ◽  
◽  
K. Kuvaev ◽  
A. Tatarintsev ◽  
N. Orlikovskii ◽  
...  
Keyword(s):  
Critical Dimension

Anastigmatic design of imaging spectrometer with varied line-space convex grating

2020 ◽  
Vol 28 (10) ◽  
pp. 2103-2111
Author(s):  
Mei-hong ZHAO ◽  
◽  
Xin-yu WANG ◽  
Yan-xiu JIANG ◽  
Shuo YANG ◽  
...  
Keyword(s):  
Imaging Spectrometer ◽  
Line Space
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