Analog and bipolar resistive switching in pn junction of n-type ZnO nanowires on p-type Si substrate

2013 ◽  
Vol 114 (6) ◽  
pp. 064502 ◽  
Author(s):  
Seung Chang Lee ◽  
Quanli Hu ◽  
Yoon-Jae Baek ◽  
Young Jin Choi ◽  
Chi Jung Kang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Zno Nanowires ◽  
Si Substrate ◽  
Bipolar Resistive Switching ◽  
Pn Junction ◽  
P Type

Size-Independent Unipolar and Bipolar Resistive Switching Behaviors in ZnO Nanowires

2019 ◽  
Vol 48 (6) ◽  
pp. 4057-4063 ◽  
Author(s):  
Oradee Srikimkaew ◽  
Sartanee Suebka ◽  
Panithan Sriborriboon ◽  
Narathon Khemasiri ◽  
Panita Kasamechonchung ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Zno Nanowires ◽  
Bipolar Resistive Switching

scholarly journals Effects of top electrode material in hafnium-oxide-based memristive systems on highly-doped Si

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Sueda Saylan ◽  
Haila M. Aldosari ◽  
Khaled Humood ◽  
Maguy Abi Jaoude ◽  
Florent Ravaux ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Hafnium Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Differential Resistance ◽  
Oxide Semiconductor ◽  
Bipolar Resistive Switching ◽  
Current Voltage ◽  
Device Structures ◽  
Memristive Systems ◽  
P Type

Abstract This work provides useful insights into the development of HfO2-based memristive systems with a p-type silicon bottom electrode that are compatible with the complementary metal–oxide–semiconductor technology. The results obtained reveal the importance of the top electrode selection to achieve unique device characteristics. The Ag/HfO2/Si devices have exhibited a larger memory window and self-compliance characteristics. On the other hand, the Au/HfO2/Si devices have displayed substantial cycle-to-cycle variation in the ON-state conductance. These device characteristics can be used as an indicator for the design of resistive-switching devices in various scenes such as, memory, security, and sensing. The current–voltage (I–V) characteristics of Ag/HfO2/Si and Au/HfO2/Si devices under positive and negative bias conditions have provided valuable information on the ON and OFF states of the devices and the underlying resistive switching mechanisms. Repeatable, low-power, and forming-free bipolar resistive switching is obtained with both device structures, with the Au/HfO2/Si devices displaying a poorer device-to-device reproducibility. Furthermore, the Au/HfO2/Si devices have exhibited N-type negative differential resistance (NDR), suggesting Joule-heating activated migration of oxygen vacancies to be responsible for the SET process in the unstable unipolar mode.

Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors

2018 ◽  
Vol 187-188 ◽  
pp. 134-138 ◽  
Author(s):  
S.V. Tikhov ◽  
A.N. Mikhaylov ◽  
A.I. Belov ◽  
D.S. Korolev ◽  
I.N. Antonov ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Resistive Switching ◽  
Si Substrate ◽  
Bipolar Resistive Switching ◽  
Mis Capacitors

scholarly journals Bipolar resistive switching in p-type Co3O4 nanosheets prepared by electrochemical deposition

2013 ◽  
Vol 8 (1) ◽  
pp. 36 ◽  
Author(s):  
Adnan Younis ◽  
Dewei Chu ◽  
Xi Lin ◽  
Jiunn Lee ◽  
Sean Li
Keyword(s):  
Electrochemical Deposition ◽  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
P Type

Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon

Nano Letters ◽  
2021 ◽  
Author(s):  
Mahmoud N. Almadhoun ◽  
Maximilian Speckbacher ◽  
Brian C. Olsen ◽  
Erik J. Luber ◽  
Sayed Youssef Sayed ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Gallium Oxide ◽  
Bipolar Resistive Switching ◽  
Type Silicon ◽  
P Type

Visible Electroluminescence from Pn Junction Type μc-Sic/ Porous Si / c-Si Structures

1992 ◽  
Vol 283 ◽  
Author(s):  
T. Futagi ◽  
T. Matsumoto ◽  
M. Katsuno ◽  
Y. Ohta ◽  
H. Mimura ◽  
...  
Keyword(s):  
Visible Light ◽  
Light Emission ◽  
Crystalline Silicon ◽  
Red Light ◽  
Si Substrate ◽  
Forward Current ◽  
Pn Junction ◽  
Silicon Carbon ◽  
P Type ◽  
Visible Light Emission

ABSTRACTWe have fabricated two kinds of n-type microcrystalline silicon carbon (μc-SiC) / porous silicon (PS) / p-type crystalline silicon (c-Si) pn junctions and demonstrated a visible light emission from them. We have observed three types of visible light emission; an uniform red light emission at a forward current above 12mA/cm2 for the pn junction using a 0.2–0.4 Qcm c-Si substrate, and a very weak white light emission at a forward current of about 90 mA/mm2 and a strong orange-red light emission at a forward current from 200 to 619 mA/mm2for the pn junction using a 3.5–4.5 Ωcm c-Si substrate.

Bipolar resistive switching with negative differential resistance effect in a Cu/BaTiO3/Ag device

2017 ◽  
Vol 19 (19) ◽  
pp. 11864-11868 ◽  
Author(s):  
L. J. Wei ◽  
Y. Yuan ◽  
J. Wang ◽  
H. Q. Tu ◽  
Y. Gao ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Resistive Switching ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Si Substrate ◽  
Bipolar Resistive Switching ◽  
Switching Behaviour ◽  
Negative Differential Resistance Effect

We demonstrate that a bipolar non-volatile resistive switching behaviour with negative differential resistance (NDR) effect is realized in a Cu/BaTiO3/Ag device, which was deposited on a Si substrate via magnetron sputtering equipment.

Effects of Annealing Temperature on Resistance Switching Properties of ZnMn2O4 Films Deposited by Magnetron Sputtering

2015 ◽  
Vol 778 ◽  
pp. 88-91
Author(s):  
Hua Wang ◽  
Zhi Da Li ◽  
Ji Wen Xu ◽  
Yu Pei Zhang ◽  
Ling Yang
Keyword(s):  
Magnetron Sputtering ◽  
Resistive Switching ◽  
Spinel Structure ◽  
Annealing Temperature ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Si Substrate ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching

ZnMn2O4films were fabricated on p-Si substrate by magnetron sputtering. The effects of annealing temperature on microstructure, resistance switching properties and endurance characteristics of ZnMn2O4films were investigated. The ZnMn2O4films with a structure of Ag/ZnMn2O4/p-Si exhibit bipolar resistive switching behavior. The results indicated that the annealing temperature has not changed its spinel structure, the bipolar resistance behavior and endurance characteristics, but the grain become more and more large, arranged closed and distributed evenly with the increase of annealing temperature from 450°C to 750°C. The ZnMn2O4films annealed at 600°C have the biggestRHRS/RLRSratio, the lowestVONandVOFF. TheRHRS/RLRSratios of all specimens maintain at about 103after successive 1000 switching cycles, which indicated that the Ag/ZnMn2O4/p-Si device has better endurance characteristics.

Bipolar resistive switching with self-rectifying behaviors in p-type AgCr1−xMgxO2 thin films

2019 ◽  
Vol 126 (8) ◽  
pp. 085702 ◽  
Author(s):  
C. H. Li ◽  
B. B. Yang ◽  
W. J. Hu ◽  
R. H. Wei ◽  
L. Hu ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
P Type
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