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Type-II 450-550 nm InGaN-GaNAs for quantum well active region lasers and light emitters on GaN
Mapping Intimacies
◽
10.1117/12.646174
◽
2006
◽
Author(s):
Ronald A. Arif
◽
Yik-Khoon Ee
◽
Nelson Tansu
Keyword(s):
Active Region
◽
Quantum Well
◽
Type Ii
◽
Light Emitters
Download Full-text
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10.1063/1.4721411
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Photovoltaic Detector Based on Type II Heterostructure with Deep AlSb/InAsSb/AlSb Quantum Well in the Active Region for the Mid-Infrared Spectral Range
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10.1088/1742-6596/461/1/012026
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pp. 012026
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...
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Quantum Well
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Spectral Range
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Type Ii
◽
Mid Infrared
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Infrared Spectral Range
◽
Infrared Spectral
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Photovoltaic detector based on type II heterostructure with deep AlSb/InAsSb/AlSb quantum well in the active region for the midinfrared spectral range
Semiconductors
◽
10.1134/s1063782611020138
◽
2011
◽
Vol 45
(2)
◽
pp. 248-252
◽
Cited By ~ 5
Author(s):
M. P. Mikhailova
◽
I. A. Andreev
◽
K. D. Moiseev
◽
E. V. Ivanov
◽
G. G. Konovalov
◽
...
Keyword(s):
Active Region
◽
Quantum Well
◽
Spectral Range
◽
Type Ii
◽
Photovoltaic Detector
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Type-I and type-II interband transitions in CdSe/ZnTe quantum well structures
Solid State Communications
◽
10.1016/s0038-1098(98)00349-4
◽
1998
◽
Vol 108
(4)
◽
pp. 205-209
◽
Cited By ~ 14
Author(s):
J Haetty
◽
E.H Lee
◽
H Luo
◽
A Petrou
◽
J Warnock
Keyword(s):
Quantum Well
◽
Type I
◽
Type Ii
◽
Interband Transitions
◽
Quantum Well Structures
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Electron-phonon interaction and electron mobility in quantum-well type-II PbTe/PbS structures
Semiconductors
◽
10.1134/1.1187461
◽
1998
◽
Vol 32
(6)
◽
pp. 665-667
Author(s):
V. V. Bondarenko
◽
V. V. Zabudskii
◽
F. F. Sizov
Keyword(s):
Quantum Well
◽
Electron Mobility
◽
Type Ii
◽
Phonon Interaction
◽
Electron Phonon Interaction
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(In)GaAsN-based type-II “W” quantum-well lasers for emission at λ=1.55 μm
Applied Physics Letters
◽
10.1063/1.1616193
◽
2003
◽
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◽
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◽
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I. Vurgaftman
◽
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◽
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◽
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Quantum Well
◽
Quantum Well Lasers
◽
Type Ii
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Sidewall Recombination Velocity in GaInAsP/InP Quantum-Well Lasers with Wire-like Active Region Fabricated by Wet-Chemical Etching and Organo-Metallic Vapor-Phase-Epitaxial Regrowth
Japanese Journal of Applied Physics
◽
10.1143/jjap.37.6569
◽
1998
◽
Vol 37
(Part 1, No. 12A)
◽
pp. 6569-6574
◽
Cited By ~ 6
Author(s):
Munehisa Tamura
◽
Takashi Kojima
◽
Toshikazu Ando
◽
Nobuhiro Nunoya
◽
Shigeo Tamura
◽
...
Keyword(s):
Active Region
◽
Quantum Well
◽
Vapor Phase
◽
Chemical Etching
◽
Quantum Well Lasers
◽
Epitaxial Regrowth
◽
Wet Chemical
◽
Wet Chemical Etching
◽
Recombination Velocity
◽
Metallic Vapor
Download Full-text
Effect of subband mixing on exciton binding energies in type-II quantum-well structures
Physical Review B
◽
10.1103/physrevb.45.14380
◽
1992
◽
Vol 45
(24)
◽
pp. 14380-14383
◽
Cited By ~ 6
Author(s):
J. Cen
◽
K. K. Bajaj
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Quantum Well
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◽
Type Ii
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Eight-band k·p modeling of InAs/InGaAsSb type-II W-design quantum well structures for interband cascade lasers emitting in a broad range of mid infrared
Journal of Applied Physics
◽
10.1063/1.4843076
◽
2013
◽
Vol 114
(22)
◽
pp. 223519
◽
Cited By ~ 19
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◽
G. Sęk
◽
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Keyword(s):
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Type Ii
◽
Mid Infrared
◽
Quantum Well Structures
◽
Interband Cascade Lasers
◽
Cascade Lasers
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Red-shift in the InGaAsP/GaInP active region using impurity free vacancy diffusion induced quantum well intermixing
Journal of Alloys and Compounds
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10.1016/j.jallcom.2015.05.033
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Vol 644
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pp. 398-403
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Cited By ~ 4
Author(s):
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◽
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◽
Ruijuan Sun
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◽
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◽
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Keyword(s):
Active Region
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Quantum Well
◽
Red Shift
◽
Vacancy Diffusion
◽
Quantum Well Intermixing
◽
Free Vacancy
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