Optical property of non-uniform Er doped and Yb:Er co-doped waveguide amplifiers

2005 ◽  
Author(s):  
Qi Song ◽  
ChengRen Li ◽  
ShuFeng Li ◽  
ChangLie Song ◽  
JianYong Li ◽  
...  
Keyword(s):  
Optical Property ◽  
Waveguide Amplifiers ◽  
Er Doped ◽  
Co Doped

Er-doped and Er, Yb co-doped oxyfluoride glasses and glass–ceramics, structural and optical properties

2011 ◽  
Vol 33 (11) ◽  
pp. 1630-1637 ◽  
Author(s):  
Radosław Lisiecki ◽  
Elżbieta Augustyn ◽  
Witold Ryba-Romanowski ◽  
Michał Żelechower
Keyword(s):  
Optical Properties ◽  
Glass Ceramics ◽  
Structural And Optical Properties ◽  
Oxyfluoride Glasses ◽  
Er Doped ◽  
Co Doped

Selective co-doped erbium Ti:LiNbO 3 waveguide amplifiers

2010 ◽  
Author(s):  
Rafael Salas-Montiel ◽  
Mehmet E. Solmaz ◽  
Wee Chong Tan ◽  
Xiaomin Song ◽  
William T. Snider ◽  
...  
Keyword(s):  
Waveguide Amplifiers ◽  
Co Doped

Optical property of the co-doped La and Mg BiFeO3 films fabricated by sol-gel method

2011 ◽  
Author(s):  
Lin Peng ◽  
Hongmei Deng ◽  
Jianjun Tian ◽  
Huan Deng ◽  
Pingxiong Yang ◽  
...  
Keyword(s):  
Optical Property ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
Co Doped

Thermoelectric Properties of Er-doped InGaN Alloys for High Temperature Applications

2011 ◽  
Vol 1325 ◽  
Author(s):  
K. Aryal ◽  
I. W. Feng ◽  
B. N. Pantha ◽  
J. Li ◽  
J. Y. Lin ◽  
...  
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Er Doped ◽  
Organic Chemical Vapor Deposition ◽  
Co Doped ◽  
Ingan Alloys ◽  
Temperature Applications

ABSTRACTThermoelectric (TE) properties of erbium-silicon co-doped InxGa1-xN alloys (InxGa1-xN: Er + Si, 0≤x≤0.14), grown by metal organic chemical vapor deposition, have been investigated. It was found that doping of InGaN alloys with Er atoms of concentration, N[Er] larger than 5x1019 cm-3, has substantially reduced the thermal conductivity, κ, in low In content InGaN alloys. It was observed that κ decreases as N[Er] increases in Si co-doped In0.10Ga0.90N alloys. A room temperature ZT value of ~0.05 was obtained in In0.14Ga0.86N: Er + Si, which is much higher than that obtained in un-doped InGaN with similar In content. Since low In content InGaN is stable at high temperatures, these Er+Si co-doped InGaN alloys could be promising TE materials for high temperature applications.

Optical properties of Er in Er-doped Zn/sub 2/Si/sub 0.5/Ge/sub 0.5/O/sub 4/ waveguide amplifiers

2005 ◽  
Vol 23 (3) ◽  
pp. 1342-1349 ◽  
Author(s):  
S. Banerjee ◽  
C.C. Baker ◽  
A.J. Steckl ◽  
D. Klotzkin
Keyword(s):  
Optical Properties ◽  
Waveguide Amplifiers ◽  
Er Doped
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