980-nm-pumped Er-doped LiNbO/sub 3/ waveguide amplifiers: a comparison with 1484-nm pumping

1996 ◽  
Vol 2 (2) ◽  
pp. 367-372 ◽  
Author(s):  
C.-H. Huang ◽  
L. McCaughan
Keyword(s):  
Waveguide Amplifiers ◽  
Er Doped

Optical properties of Er in Er-doped Zn/sub 2/Si/sub 0.5/Ge/sub 0.5/O/sub 4/ waveguide amplifiers

2005 ◽  
Vol 23 (3) ◽  
pp. 1342-1349 ◽  
Author(s):  
S. Banerjee ◽  
C.C. Baker ◽  
A.J. Steckl ◽  
D. Klotzkin
Keyword(s):  
Optical Properties ◽  
Waveguide Amplifiers ◽  
Er Doped

Modeling of Er-doped ion-exchanged glass waveguide amplifiers

1997 ◽  
Author(s):  
Seppo Honkanen ◽  
Juha-Pekka Laine ◽  
Tomoko Ohtsuki ◽  
Ari Tervonen ◽  
Nasser Peyghambarian
Keyword(s):  
Waveguide Amplifiers ◽  
Glass Waveguide ◽  
Er Doped

Modelling the output statistics of Er-doped LiNbO3 curved waveguide amplifiers

1999 ◽  
Vol 46 (6) ◽  
pp. 1017-1030 ◽  
Author(s):  
N. N. Puscas ◽  
B. Wacogne ◽  
A. Ducariu ◽  
B. Grappe
Keyword(s):  
Waveguide Amplifiers ◽  
Er Doped ◽  
Curved Waveguide

Optical property of non-uniform Er doped and Yb:Er co-doped waveguide amplifiers

2005 ◽  
Author(s):  
Qi Song ◽  
ChengRen Li ◽  
ShuFeng Li ◽  
ChangLie Song ◽  
JianYong Li ◽  
...  
Keyword(s):  
Optical Property ◽  
Waveguide Amplifiers ◽  
Er Doped ◽  
Co Doped

A High Index Contrast Silicon Oxynitride Materials Platform for Er-doped Microphotonic Amplifiers

2004 ◽  
Vol 817 ◽  
Author(s):  
Sajan Saini ◽  
Jessica G. Sandland ◽  
Anat Eshed ◽  
Daniel K. Sparacin ◽  
Luca Dal Negro ◽  
...  
Keyword(s):  
Low Noise ◽  
Silicon Oxynitride ◽  
High Index ◽  
Index Of Refraction ◽  
Scattering Loss ◽  
Host System ◽  
Waveguide Amplifiers ◽  
Index Contrast ◽  
High Index Contrast ◽  
Er Doped

AbstractEr-based optical amplification continues to be the ideal low noise, WDM crosstalk free, broadband candidate for waveguide amplifiers. Design analysis of the applicability of Er-Doped Waveguide Amplifiers (EDWAs) for micron-scale integrated photonics in a planar lightwave circuit concludes: (i) an >80× increase in gain efficiency, and (ii) a >40×increase in device shrink can be realized, for a high index contrast EDWA (with a core-cladding index difference of δn=0.1↔0.7), compared to a conventional Er-doped fiber amplifier. The materials challenge now is to establish a robust materials system which meets this high index difference design requirement while simultaneously leveraging the capability of silicon (Si) processing: a host platform for EDWAs must be found which can integrate with Si Microphotonics. Silicon nitride (Si3N4), silicon oxide (SiO2) and a miscible silicon oxynitride alloy (SiON) of the two meet this materials challenge. We present the results of reactive and conventional magnetron sputtering based materials characterization for this high index host system. Room temperature and 4 K photo-luminescence studies for annealed samples show the reduction of non-radiative de-excitation centers while maintaining an amorphous host structure. Atomic force microscopy shows less than 1 nm peak-to-peak roughness in deposited films. Prism coupler measurements show a reliable reproducibility of host index of refraction with waveguide scattering loss <2 dB/cm. We conclude that the SiON host system forms an optimal waveguide core for an SiO2-clad EDWA. Initial gain measurements show a gain coefficient of approximately 3.9 dB/cm.

Er-Doped Optical Waveguide Amplifiers in X-Cut Lithium Niobate by Selective Codiffusion

2010 ◽  
Vol 22 (6) ◽  
pp. 362-364 ◽  
Author(s):  
Rafa Salas-Montiel ◽  
Mehmet E. Solmaz ◽  
Ohannes Eknoyan ◽  
Christi K. Madsen
Keyword(s):  
Lithium Niobate ◽  
Optical Waveguide ◽  
Waveguide Amplifiers ◽  
Er Doped
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