Thin-film fullerenes for organic field-effect transistors and complementary digital logic circuits

2005 ◽  
Author(s):  
Joshua Haddock ◽  
Benoit Domercq ◽  
Bernard Kippelen
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Logic Circuits ◽  
Digital Logic ◽  
Organic Field Effect Transistors

scholarly journals DNA adsorption measured with ultra-thin film organic field effect transistors

2009 ◽  
Vol 24 (9) ◽  
pp. 2935-2938 ◽  
Author(s):  
P. Stoliar ◽  
E. Bystrenova ◽  
S.D. Quiroga ◽  
P. Annibale ◽  
M. Facchini ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Dna Adsorption ◽  
Ultra Thin Film

Vertically Stacked Complementary Organic Field-Effect Transistors and Logic Circuits Fabricated by Inkjet Printing

2016 ◽  
Vol 2 (7) ◽  
pp. 1600046 ◽  
Author(s):  
Jimin Kwon ◽  
Yasunori Takeda ◽  
Kenjiro Fukuda ◽  
Kilwon Cho ◽  
Shizuo Tokito ◽  
...  
Keyword(s):  
Inkjet Printing ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Logic Circuits ◽  
Organic Field Effect Transistors

Enhanced Mobility of Organic Field-Effect Transistors with Epitaxially Grown C60 Film by in-situ Heat Treatment of the Organic Dielectric

2005 ◽  
Vol 871 ◽  
Author(s):  
Th. B. Singh ◽  
N. Marjanovic ◽  
G. J. Matt ◽  
S. Günes ◽  
N. S. Sariciftci ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Fields ◽  
Field Effect ◽  
Film Growth ◽  
Field Effect Transistors ◽  
Growth Conditions ◽  
Initial Growth ◽  
Organic Field Effect Transistors ◽  
Enhanced Mobility ◽  
High Electric Fields

AbstractElectron mobilities were studied as a function of thin-film growth conditions in hot wall epitaxially grown C60 based field-effect transistors. Mobilities in the range of ∼ 0.5 to 6 cm2/Vs are obtained depending on the thin-film morphology arising from the initial growth conditions. Moreover, the field-effect transistor current is determined by the morphology of the film at the interface with the dielectric, while the upper layers are less relevant to the transport. At high electric fields, a non-linear transport has been observed. This effect is assigned to be either because of the dominance of the contact resistance over the channel resistance or because of the gradual move of the Fermi level towards the band edge as more and more empty traps are filled due to charge injection.

scholarly journals Investigation on the Sensing Properties of Organic Field Effect Transistors Using P3HT

2020 ◽  
Author(s):  
Silpa S. Prasad ◽  
Divya G ◽  
Sindhu S ◽  
Shreekrishna Kumar K
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Xrd Pattern ◽  
Humidity Sensing ◽  
Morphological Studies ◽  
Sensing Applications ◽  
Crystalline Nature ◽  
Effect Transistor

The humidity sensing behavior and the properties of P3HT based thin film organic field effect transistor (OFET) has been reported. Layers with (Au)/P3HT/SiO2/(Au) are coated and OFET is fabricated. The XRD pattern of thin films are plotted which shows an orientation of (100) indicating its crystalline nature. The morphological studies report the presence of dreg like structures that can absorb water molecules from a humid environment which can be used in humidity sensing applications.

Sign in / Sign up

Export Citation Format

Share Document