scholarly journals Investigation on the Sensing Properties of Organic Field Effect Transistors Using P3HT

2020 ◽  
Author(s):  
Silpa S. Prasad ◽  
Divya G ◽  
Sindhu S ◽  
Shreekrishna Kumar K
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Xrd Pattern ◽  
Humidity Sensing ◽  
Morphological Studies ◽  
Sensing Applications ◽  
Crystalline Nature ◽  
Effect Transistor

The humidity sensing behavior and the properties of P3HT based thin film organic field effect transistor (OFET) has been reported. Layers with (Au)/P3HT/SiO2/(Au) are coated and OFET is fabricated. The XRD pattern of thin films are plotted which shows an orientation of (100) indicating its crystalline nature. The morphological studies report the presence of dreg like structures that can absorb water molecules from a humid environment which can be used in humidity sensing applications.

scholarly journals DNA adsorption measured with ultra-thin film organic field effect transistors

2009 ◽  
Vol 24 (9) ◽  
pp. 2935-2938 ◽  
Author(s):  
P. Stoliar ◽  
E. Bystrenova ◽  
S.D. Quiroga ◽  
P. Annibale ◽  
M. Facchini ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Dna Adsorption ◽  
Ultra Thin Film

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

A One-Micrometer Channel Length α-Si Thin-Film Field-Effect Transistor

1984 ◽  
Vol 33 ◽  
Author(s):  
Z. Yaniv ◽  
G. Hansell ◽  
M. Vijan ◽  
V. Cannella
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Liquid Crystal Displays ◽  
Channel Length ◽  
Large Area ◽  
Short Channel ◽  
Threshold Voltages ◽  
Effect Transistor ◽  
Si Thin Film

ABSTRACTA new method of fabricating short channel α-Si TFTs has been developed. One-micrometer channel length α-Si thin-film field effect transistors have been fabricated and tested. Threshold voltages as low as 1.9V and field-effect mobilities as high as 1 cm 2/V-sec are reported. These devices were fabricated by techniques compatible with the production of large area liquid crystal displays.

Enhanced Mobility of Organic Field-Effect Transistors with Epitaxially Grown C60 Film by in-situ Heat Treatment of the Organic Dielectric

2005 ◽  
Vol 871 ◽  
Author(s):  
Th. B. Singh ◽  
N. Marjanovic ◽  
G. J. Matt ◽  
S. Günes ◽  
N. S. Sariciftci ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Fields ◽  
Field Effect ◽  
Film Growth ◽  
Field Effect Transistors ◽  
Growth Conditions ◽  
Initial Growth ◽  
Organic Field Effect Transistors ◽  
Enhanced Mobility ◽  
High Electric Fields

AbstractElectron mobilities were studied as a function of thin-film growth conditions in hot wall epitaxially grown C60 based field-effect transistors. Mobilities in the range of ∼ 0.5 to 6 cm2/Vs are obtained depending on the thin-film morphology arising from the initial growth conditions. Moreover, the field-effect transistor current is determined by the morphology of the film at the interface with the dielectric, while the upper layers are less relevant to the transport. At high electric fields, a non-linear transport has been observed. This effect is assigned to be either because of the dominance of the contact resistance over the channel resistance or because of the gradual move of the Fermi level towards the band edge as more and more empty traps are filled due to charge injection.

scholarly journals Self-Assemble Monolayer Dependent Field Effect Transistor’s Performance Based On Tetracene Single-Crystal

2013 ◽  
Vol 25 (2) ◽  
pp. 194-199 ◽  
Author(s):  
Md. Minarul Islam
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Chemical Society ◽  
Gate Insulator ◽  
Organic Field Effect Transistors ◽  
Crystal Field Effect ◽  
Effect Transistor ◽  
Self Assemble Monolayer

Organic field effect transistors with an active layer based on the tetracene single-crystal were fabricated. It was found that organosilane self-assemble monolayer (SAM) modified device with tetracene single-crystals gave higher mobility and on/off ratio rather than untreated device. SAM modified tetracene single-crystal transistors with parylene gate insulator showed the highest mobility of 0.66 cm2 V-1 s-1 and high on/off ratio of ~104. This finding demonstrates that SAM treatment decrease the charge leakage between source and drain which help to decrease the off current with greater extent and increase the on current slightly of the tetracene single-crystal field-effect transistors. Journal of Bangladesh Chemical Society, Vol. 25(2), 194-199, 2012 DOI: http://dx.doi.org/10.3329/jbcs.v25i2.15086

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