Characterization of extreme ultraviolet (EUV) emission from xenon generated using a compact plasma-discharge source for lithography applications

2005 ◽  
Author(s):  
H. Merabet ◽  
R. Bista ◽  
C. Schubert ◽  
S. Fuelling ◽  
R. Bruch ◽  
...  
1993 ◽  
Vol 62 (1-3) ◽  
pp. 564-569 ◽  
Author(s):  
F. Davanloo ◽  
T.J. Lee ◽  
J.H. You ◽  
H. Park ◽  
C.B. Collins

1997 ◽  
Vol 22 (1) ◽  
pp. 34 ◽  
Author(s):  
M. A. Klosner ◽  
H. A. Bender ◽  
W. T. Silfvast ◽  
J. J. Rocca

2002 ◽  
Vol 74 (20) ◽  
pp. 5327-5332 ◽  
Author(s):  
Barnes ◽  
Roger Sperline ◽  
M. Bonner Denton ◽  
Charles J. Barinaga ◽  
David Koppenaal ◽  
...  

2000 ◽  
Vol 39 (17) ◽  
pp. 2941 ◽  
Author(s):  
Patrick Naulleau ◽  
Kenneth A. Goldberg ◽  
Eric M. Gullikson ◽  
Jeffrey Bokor

2007 ◽  
Vol 121-123 ◽  
pp. 885-888
Author(s):  
C.H. Zhang ◽  
S. Katsuki ◽  
J.G. Shi ◽  
H. Horita ◽  
T. Namihira ◽  
...  

In the development of our Z-pinch plasma EUV source, xenon (Xe) is used for the background gas discharges, and a solid tin (Sn) rod is used as target material due to its potential of high convention efficiency (CE) from input electric energy to EUV radiation [1, 2]. The Z-pinch plasma was driven by pulsed current with amplitude of 30 kA and pulse duration of 110 ns. Pinhole imaging, EUV spectrograph and in-band EUV energy monitor were used to characterize the EUV emission from the Z-pinch discharge. The experimental analyses have demonstrated the CE was as high as 3% [3].


2017 ◽  
Vol 20 (suppl 2) ◽  
pp. 60-68 ◽  
Author(s):  
Fernando Ribeiro Oliveira ◽  
Fernanda Steffens ◽  
Poincyana Sonaly Bessa de Holanda ◽  
José Heriberto Oliveira do Nascimento ◽  
Katia Nicolau Matsui ◽  
...  

2013 ◽  
Vol 88 (3) ◽  
Author(s):  
David Gauthier ◽  
Benoît Mahieu ◽  
Giovanni De Ninno
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