Conductance fluctuations in free-standing hydrogenated amorphous silicon nanoparticles

2005 ◽  
Author(s):  
Thomas J. Belich ◽  
Zhe Shen ◽  
Charlie P. Blackwell ◽  
Stephen A. Campbell ◽  
James Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Silicon Nanoparticles ◽  
Hydrogenated Amorphous Silicon ◽  
Free Standing ◽  
Conductance Fluctuations ◽  
Amorphous Silicon Nanoparticles ◽  
Hydrogenated Amorphous

Energetic characteristics of hydrogenated amorphous silicon nanoparticles

2021 ◽  
pp. 133140
Author(s):  
Feiyu Xu ◽  
Giorgio Nava ◽  
Prithwish Biswas ◽  
Isabelle Dulalia ◽  
Haiyang Wang ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Nanoparticles ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Silicon Nanoparticles ◽  
Hydrogenated Amorphous

Conductance fluctuations in doped hydrogenated amorphous silicon

1993 ◽  
Vol 47 (19) ◽  
pp. 12578-12589 ◽  
Author(s):  
C. E. Parman ◽  
N. E. Israeloff ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Conductance Fluctuations ◽  
Hydrogenated Amorphous

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

2008 ◽  
Vol 1066 ◽  
Author(s):  
C. Blackwell ◽  
Xiaodong Pi ◽  
U. Kortshagen ◽  
J. Kakalios
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Silicon Nanoparticles ◽  
Volume Fraction ◽  
Hydrogenated Amorphous Silicon ◽  
Dark Conductivity ◽  
Hydrogen Binding ◽  
Doping Effects ◽  
Structural And Electronic Properties ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon films containing silicon nanocrystalline inclusions (a/nc-Si:H) that have been n-type doped have been synthesized using a dual-plasma co-deposition system. We report the structural and electronic properties of n-type doped a/nc-Si:H as a function of phosphine doping level and nanocrystalline concentration. The volume fraction of nanocrystals in the doped a/nc-Si:H thin films is measured using Raman spectroscopy, and the hydrogen binding configurations are characterized using infra-red absorption spectroscopy. In undoped a/nc-Si:H, the inclusion of low and moderate nanocrystalline concentrations results in an increase in the dark conductivity, compared to a-Si:H films grown without nanocrystalline inclusions. In contrast, the addition of even a low concentration of silicon nanoparticles in doped a/nc-Si:H thin films leads to a decrease in the dark conductivity and photoconductivity, compared to pure a-Si:H films.

scholarly journals Anomalous crystallization of hydrogenated amorphous silicon during fast heating ramps

2005 ◽  
Vol 20 (2) ◽  
pp. 277-281 ◽  
Author(s):  
J. Farjas ◽  
J. Serra-Miralles ◽  
P. Roura ◽  
E. Bertran ◽  
P. Roca i Cabarrocas
Keyword(s):  
Amorphous Silicon ◽  
Silicon Nanoparticles ◽  
Hydrogenated Amorphous Silicon ◽  
Crystallization Rate ◽  
Crystallization Time ◽  
Heating Rates ◽  
Fast Heating ◽  
Crystallization Experiments ◽  
Constant Heating ◽  
Hydrogenated Amorphous

Thermal crystallization experiments carried out using calorimetry on several a-Si:H materials with different microstructures are reported. The samples were crystallized during heating ramps at constant heating rates up to 100 K/min. Under these conditions, crystallization takes place above 700 °C and progressively deviates from the standard kinetics. In particular, two crystallization processes were detected in conventional a-Si:H, which reveal an enhancement of the crystallization rate. At 100 K/min, such enhancement is consistent with a diminution of the crystallization time by a factor of 7. In contrast, no systematic variation of the resulting grain size was observed. Similar behavior was also detected in polymorphous silicon and silicon nanoparticles, thus showing that it is characteristic of a variety of hydrogenated amorphous silicon materials.

Non-Gaussian 1 / f Noise and Conductance Fluctuations in Hydrogenated Amorphous Silicon

1992 ◽  
Vol 258 ◽  
Author(s):  
C. E. Parman ◽  
N. E. Israeloff ◽  
J. Kakalios
Keyword(s):  
Spectral Analysis ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Current Fluctuations ◽  
Noise Power ◽  
Effective Volume ◽  
Conductance Fluctuations ◽  
Cooperative Dynamics ◽  
Non Gaussian ◽  
Hydrogenated Amorphous

ABSTRACTStatistical analysis of the 1/f noise power spectrum of co-planar current fluctuations in n-type doped hydrogenated amorphous silicon (a-Si:H) find that the noise arises from a small number of correlated fluctuators. The noise power displays a complicated time dependence with the noise power changing in both magnitude and as a function of frequency. Spectral analysis of these noise power fluctuations display an approximate 1/f frequency dependence. These results are surprising given the effective volume (∼10-7 cm3) of the sample, and indicate that cooperative dynamics govern conductance fluctuations in a-Si:H.

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