Conductance fluctuations in doped hydrogenated amorphous silicon

1993 ◽  
Vol 47 (19) ◽  
pp. 12578-12589 ◽  
Author(s):  
C. E. Parman ◽  
N. E. Israeloff ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Conductance Fluctuations ◽  
Hydrogenated Amorphous

Non-Gaussian 1 / f Noise and Conductance Fluctuations in Hydrogenated Amorphous Silicon

1992 ◽  
Vol 258 ◽  
Author(s):  
C. E. Parman ◽  
N. E. Israeloff ◽  
J. Kakalios
Keyword(s):  
Spectral Analysis ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Current Fluctuations ◽  
Noise Power ◽  
Effective Volume ◽  
Conductance Fluctuations ◽  
Cooperative Dynamics ◽  
Non Gaussian ◽  
Hydrogenated Amorphous

ABSTRACTStatistical analysis of the 1/f noise power spectrum of co-planar current fluctuations in n-type doped hydrogenated amorphous silicon (a-Si:H) find that the noise arises from a small number of correlated fluctuators. The noise power displays a complicated time dependence with the noise power changing in both magnitude and as a function of frequency. Spectral analysis of these noise power fluctuations display an approximate 1/f frequency dependence. These results are surprising given the effective volume (∼10-7 cm3) of the sample, and indicate that cooperative dynamics govern conductance fluctuations in a-Si:H.

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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