Dynamical Percolation Model of Conductance Fluctuations in Hydrogenated Amorphous Silicon

1995 ◽  
Vol 75 (11) ◽  
pp. 2192-2195 ◽  
Author(s):  
Lisa M. Lust ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Percolation Model ◽  
Conductance Fluctuations ◽  
Hydrogenated Amorphous ◽  
Dynamical Percolation

Telegraph Noise as A Probe of Microscopic Hydrogen Motion in Amorphous Silicon

1995 ◽  
Vol 377 ◽  
Author(s):  
Lisa M. Lust ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Diffusion Processes ◽  
Switching Noise ◽  
Resistor Network ◽  
Network Support ◽  
Conductance Fluctuations ◽  
Telegraph Noise ◽  
Current Filaments ◽  
Hydrogenated Amorphous ◽  
Dynamical Percolation

ABSTRACTTime traces of conductance fluctuations in the co-planar current of hydrogenated amorphous silicon (a-Si:H) display sharp jumps between discrete resistance levels, termed random telegraph switching noise (RTSN). Measurements of the temperature dependence and effects of light soaking of the RTSN in n-type doped a-Si:H are reported. The rise times between the two level fluctuators yield activation energies and attempt to hop frequencies for microscopic hydrogen motion which agree with those obtained from NMR experiments. Computer simulations of a dynamical percolation random resistor network support the suggestion that the RTSN arises from local diffusion processes altering the conductance of inhomogeneous current filaments.

Conductance fluctuations in doped hydrogenated amorphous silicon

1993 ◽  
Vol 47 (19) ◽  
pp. 12578-12589 ◽  
Author(s):  
C. E. Parman ◽  
N. E. Israeloff ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Conductance Fluctuations ◽  
Hydrogenated Amorphous

Non-Gaussian 1 / f Noise and Conductance Fluctuations in Hydrogenated Amorphous Silicon

1992 ◽  
Vol 258 ◽  
Author(s):  
C. E. Parman ◽  
N. E. Israeloff ◽  
J. Kakalios
Keyword(s):  
Spectral Analysis ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Current Fluctuations ◽  
Noise Power ◽  
Effective Volume ◽  
Conductance Fluctuations ◽  
Cooperative Dynamics ◽  
Non Gaussian ◽  
Hydrogenated Amorphous

ABSTRACTStatistical analysis of the 1/f noise power spectrum of co-planar current fluctuations in n-type doped hydrogenated amorphous silicon (a-Si:H) find that the noise arises from a small number of correlated fluctuators. The noise power displays a complicated time dependence with the noise power changing in both magnitude and as a function of frequency. Spectral analysis of these noise power fluctuations display an approximate 1/f frequency dependence. These results are surprising given the effective volume (∼10-7 cm3) of the sample, and indicate that cooperative dynamics govern conductance fluctuations in a-Si:H.

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous
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