Long-term 193-nm laser irradiation of thin-film-coated CaF2 in the presence of H2O

2005 ◽  
Author(s):  
V. Liberman ◽  
M. Switkes ◽  
M. Rothschild ◽  
S. T. Palmacci ◽  
J. H. Sedlacek ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Irradiation ◽  
193 Nm

Photoreactions in Polyalkylsilynes Induced by ArF-Laser Irradiation

1990 ◽  
Vol 204 ◽  
Author(s):  
R. R. Kunz ◽  
P. A. Bianconi ◽  
M. W. Horn ◽  
D. A. Smith ◽  
C. A. Freed
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Irradiation ◽  
Alkyl Group ◽  
Optical Components ◽  
X Ray ◽  
Oxygen Coordination ◽  
Bond Scission ◽  
Deep Uv ◽  
193 Nm

ABSTRACTPhotoreactions in polyalkylsilyne thin films induced by ArFlaser (193 nm) irradiation have been examined. Photoexcitation of the σ-conjugated Si-network at 193 nm (6.42 eV) results in Si-Si bond scission and alkyl-group desorption when irradiated in a vacuum. In addition to these processes, efficient (up to 7% quantum efficiency) insertion of oxygen into the Si backbone occurs when the irradiation is performed in air, resulting in the formation of a siloxane. Both infrared and X-ray photoelectron spectroscopies indicate a higher oxygen coordination about the Si atoms in the oxidized product than observed for linear polysilanes. This higher oxygen coordination indicates a siloxane network. The polysilynes have been demonstrated as deep UV photoresists and may have additional applications as precursors for thin film or binary optical components.

Achieving over 4% efficiency for SnS/CdS thin-film solar cells by improving the heterojunction interface quality

2020 ◽  
Vol 8 (39) ◽  
pp. 20658-20665 ◽  
Author(s):  
Jae Yu Cho ◽  
SeongYeon Kim ◽  
Raju Nandi ◽  
Junsung Jang ◽  
Hee-Sun Yun ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Vapor Transport ◽  
Thin Film Solar Cells ◽  
Interface Quality ◽  
Heterojunction Solar Cells ◽  
Term Stability ◽  
Long Term Stability ◽  
Cds Thin Film

The highest efficiency of 4.225% for vapor-transport-deposited SnS absorber/CdS heterojunction solar cells with good long-term stability over two years is achieved.

scholarly journals Improvement of the long-term stability of ZnSnO thin film transistors by tungsten incorporation using a solution-process method

RSC Advances ◽  
2018 ◽  
Vol 8 (37) ◽  
pp. 20990-20995 ◽  
Author(s):  
Xiang Yang ◽  
Shu Jiang ◽  
Jun Li ◽  
Jian-Hua Zhang ◽  
Xi-Feng Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Solution Process ◽  
Solution Technique ◽  
Term Stability ◽  
Long Term Stability ◽  
Process Method

In this paper, W-doped ZnSnO (WZTO) thin films and TFT devices are successfully fabricated by a wet-solution technique.

A Low-Range Drift-Free Bio-compatible Pressure Sensor Based on P(VDF-TrFE) Piezoelectric Thin Film

2009 ◽  
Vol 1222 ◽  
Author(s):  
Xiaoyang Li ◽  
Timothy Reissman ◽  
Fan Yu ◽  
Edwin C. Kan
Keyword(s):  
Thin Film ◽  
Blood Pressure ◽  
Pressure Sensor ◽  
Equivalent Circuit Model ◽  
Swelling Pressure ◽  
Pressure Monitoring ◽  
Sensing Element ◽  
Piezoelectric Resonance ◽  
Piezoelectric Thin Film

AbstractA low-range pressure sensor (0-100kPa) based on the P(VDF-TrFE) piezoelectric thin film is proposed, where the long-term drift is eliminated by operating near the piezoelectric resonance. The pressure sensor is designed for blood pressure and tissue swelling pressure monitoring. The poled 50μm±1μm P(VDF-TrFE) copolymer film is used as the sensing element, with all fabrication and assembly materials biocompatible. A modified Butterworth-Van Dyke (BVD) [1] equivalent circuit model is used to characterize the sensor behavior. The pressure sensor exhibits negligible drift in weeks of operation. The device shows a sensitivity of 0.038MHz/kPa resonance frequency shift under stress, which leads to a maximum readout change of 1.1%/kPa in the present setup.

Long-term 193-nm laser-induced degradation of fused silica and calcium fluoride

1999 ◽  
Author(s):  
Vladimir Liberman ◽  
Mordechai Rothschild ◽  
Jan H. C. Sedlacek ◽  
Ray S. Uttaro ◽  
Allen K. Bates ◽  
...  
Keyword(s):  
Calcium Fluoride ◽  
Fused Silica ◽  
193 Nm

Bonding of LINBO3 thin film on Si substrate using laser irradiation

2015 ◽  
Author(s):  
Hiroki Kawano ◽  
Ryo Takigawa ◽  
Hiroshi Ikenoue ◽  
Tanemasa Asano
Keyword(s):  
Thin Film ◽  
Laser Irradiation ◽  
Si Substrate

Argon laser irradiation of the semicircular canal in two patients with benign paroxysmal positional vertigo

2002 ◽  
Vol 116 (9) ◽  
pp. 723-725 ◽  
Author(s):  
Yasuya Nomura
Keyword(s):  
Laser Irradiation ◽  
Benign Paroxysmal Positional Vertigo ◽  
Semicircular Canals ◽  
Argon Laser ◽  
Laser Device ◽  
Positional Vertigo ◽  
Long Term Follow Up ◽  
Paroxysmal Positional Vertigo

The results of long-term follow-up after surgical treatment of two patients with intractable benign paroxysmal positional vertigo are reported. Argon laser irradiation of the blue-lined posterior and lateral semicircular canals in one patient, and of only the posterior canal in the other was performed seven and six years ago, respectively. Argon laser irradiation was carried out 10 times in succession three mm along the canal to occlude it. The power applied each time was 1.5.W on the dial of the laser device for 0.5.sec. Relief of vertigo was noted on the second post-irradiation day. There has been no recurrence of vertigo in these patients.

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