Effect of nanosecond and femtosecond pulse duration of laser processing of thin biodegradable polymeric film

2004 ◽  
Author(s):  
K. S. Tiaw ◽  
P. S. Tan ◽  
Ming Hui Hong ◽  
Z. B. Wang ◽  
Swee H. Teoh
Keyword(s):  
Pulse Duration ◽  
Laser Processing ◽  
Femtosecond Pulse ◽  
Polymeric Film

Femtosecond pulse duration as a tool for controlling high fluence of laser filament in air

2009 ◽  
Author(s):  
Elena P. Silaeva ◽  
Oleg V. Tverskoy ◽  
Valerii P. Kandidov
Keyword(s):  
Pulse Duration ◽  
Femtosecond Pulse ◽  
High Fluence

Pulse duration and energy density influence on laser processing of metals with short and ultrashort pulses

2005 ◽  
Author(s):  
Ronan Le Harzic ◽  
Detlef Breitling ◽  
S. Sommer ◽  
Christian Fohl ◽  
S. Valette ◽  
...  
Keyword(s):  
Energy Density ◽  
Pulse Duration ◽  
Laser Processing ◽  
Ultrashort Pulses

Long-Pulse Duration Excimer Laser Processing in the Fabrication of High Performance Polysilicon TFTs for Large Area Electronics

2001 ◽  
Vol 685 ◽  
Author(s):  
E. Fogarassy ◽  
B. Prévot ◽  
S. de Unamuno ◽  
C. Prat ◽  
D. Zahorski ◽  
...  
Keyword(s):  
Pulse Duration ◽  
Excimer Laser ◽  
Laser Processing ◽  
High Performance ◽  
Microstructural Analysis ◽  
Neutral Atmosphere ◽  
Large Area ◽  
Electrical Stress ◽  
Si Films ◽  
Long Pulse

AbstractIn this work, was investigated both numerically and experimentally, the excimer laser processing of a-Si films deposited on SiO2-coated glass substrates, using the very large area (∼ 20 cm2) and long pulse duration (200 ns) excimer source from SOPRA Company. Experiments were carried out in air or in neutral atmosphere, using both the single- and multi-shot mode. From the microstructural analysis of the laser irradiated area the formation of a large-grained material through the so-called SLG regime was evidenced. In addition, the application of a multi-shot process was demonstrated to be very efficient to prepare uniform polysilicon layers with enlarged grain sizes (up to 1.5 µm after 20 shots). Finally, poly-Si TFTs prepared in the optimized conditions (multi-shot, neutral ambience) exibited field effect mobilities up to 235 cm2/V.s (for N-type) and 84 cm2/V.s (for P-type), with fairly uniform device characteristics over large area and excellent stability under electrical stress.

Femtosecond pulse duration measurements utilizing an ultrafast nonlinearity of nickel

1998 ◽  
Vol 147 (1-3) ◽  
pp. 148-152 ◽  
Author(s):  
P.J. Bennett ◽  
A. Malinowski ◽  
B.D. Rainford ◽  
I.R. Shatwell ◽  
Yu.P. Svirko ◽  
...  
Keyword(s):  
Pulse Duration ◽  
Femtosecond Pulse
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