Femtosecond-pulse laser processing of metallic and semiconducting thin films

1995 ◽  
Author(s):  
Joerg Krueger ◽  
Wolfgang Kautek
Keyword(s):  
Thin Films ◽  
Pulse Laser ◽  
Laser Processing ◽  
Femtosecond Pulse ◽  
Femtosecond Pulse Laser ◽  
Semiconducting Thin Films

Femtosecond Pulse Laser Damage in Thin Films

2007 ◽  
Author(s):  
Mark Mero ◽  
Jianhua Liu ◽  
Ali J. Sabbah ◽  
Benjamin Clapp ◽  
Jayesh Jasapara ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulse Laser ◽  
Femtosecond Pulse ◽  
Laser Damage ◽  
Femtosecond Pulse Laser

scholarly journals Effect of oxygen pressure on the optical properties of ZnO/Si(100) thin films deposited by femtosecond pulse laser

2009 ◽  
Vol 58 (4) ◽  
pp. 2785
Author(s):  
Yang Yi-Fa ◽  
Li Yu-Hua ◽  
Long Hua ◽  
Lu Pei-Xiang ◽  
Yang Guang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pulse Laser ◽  
Oxygen Pressure ◽  
Femtosecond Pulse ◽  
Femtosecond Pulse Laser ◽  
Effect Of Oxygen

2D reproduction of the face on the Turin Shroud by infrared femtosecond pulse laser processing

2019 ◽  
Vol 58 (9) ◽  
pp. 2158 ◽  
Author(s):  
C. Donnet ◽  
J. Granier ◽  
G. Vergé ◽  
Y. Bleu ◽  
S. Reynaud ◽  
...  
Keyword(s):  
Pulse Laser ◽  
Laser Processing ◽  
Femtosecond Pulse ◽  
Femtosecond Pulse Laser ◽  
The Face

Femtosecond pulse laser processing of TiN on silicon

2000 ◽  
Vol 154-155 ◽  
pp. 659-663 ◽  
Author(s):  
J. Bonse ◽  
P. Rudolph ◽  
J. Krüger ◽  
S. Baudach ◽  
W. Kautek
Keyword(s):  
Pulse Laser ◽  
Laser Processing ◽  
Femtosecond Pulse ◽  
Femtosecond Pulse Laser

Characteristics Research of Gallium Arsenide Solar Cells under Femtosecond Laser Illumination

2014 ◽  
Vol 941-944 ◽  
pp. 575-579
Author(s):  
Si Xiao ◽  
Yi Tan Gao ◽  
Xiu Qin Tian ◽  
Jun He
Keyword(s):  
Gallium Arsenide ◽  
Solar Cells ◽  
Femtosecond Laser ◽  
Pulse Laser ◽  
Conversion Efficiency ◽  
Femtosecond Pulse ◽  
Damage Threshold ◽  
Laser Illumination ◽  
Femtosecond Pulse Laser ◽  
Continuous Waves

Femtosecond laser with ultrashort pulse (≤35fs) is used to investigate the damage threshold and light-to-electric conversion efficiency of gallium arsenide solar cells. Different from nanosecond or picosecond lasers, the damage threshold of the solar cell illuminated by femtosecond laser is slightly higher than that under the illumination of continuous-waves laser with the same wavelength. Because the thermal non-equilibrium effect becomes obvious, heat conduction phenomenon no longer obeys the law of Fourier, when the heating pulse time of femtosecond laser is equal to or shorter than the electron-phonon coupling time. The photovoltaic properties of gallium arsenide solar cells under femtosecond pulse laser illumination are measured. The device shows better short circuit current and the light-to-electric conversion efficiency under femtosecond pulse laser than that under continuous-waves laser of the same wavelength.

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