Atomic force and near-field scanning microscopy of solid zFP538 films

2005 ◽  
Author(s):  
Nadya N. Zubova ◽  
Artem A. Astafyev ◽  
Andrew N. Petrukhin ◽  
Oleg M. Sarkisov ◽  
Alexander P. Savitsky
Keyword(s):  
Near Field ◽  
Scanning Microscopy ◽  
Atomic Force ◽  
Near Field Scanning

Photoconductive NSOM for mapping optoelectronic phases in nanostructures

Nanophotonics ◽  
2014 ◽  
Vol 3 (1-2) ◽  
pp. 19-31 ◽  
Author(s):  
Anshuman J. Das ◽  
Ravichandran Shivanna ◽  
K.S. Narayan
Keyword(s):  
Near Field ◽  
Functional Materials ◽  
Scanning Microscopy ◽  
Local Excitation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Local Current ◽  
Scanning Optical Microscopy ◽  
Microscopy Techniques ◽  
Current Monitoring

AbstractThe advent of optically functional materials with low-intensive processing methods is accompanied by a growing need for high resolution imaging to probe the inherent inhomogeneities in the underlying microstructure. Atomic force microscopy based techniques are typically utilized for imaging the surface of organic thin films, quantum dots and other nanomaterials with ultrahigh resolution. Several modes like conductive, Kelvin, electrostatic amongst others have been particularly successful in imaging the local current, potential and charge distribution of variety of systems. However, the functionality of photoconduction in these materials cannot be directly imaged by these modes alone. There is a requirement for a local excitation source or collection arrangement that is compatible with scanning microscopy techniques followed by a current monitoring mechanism. Near-field scanning optical microscopy (NSOM) possesses all the advantages of scanning microscopy and is capable of local excitation that overcomes the diffraction limit faced by conventional optical microscopes. Additionally, NSOM can be carried out on actual photoconductive two terminal and three terminal device structures to image local optoelectronic properties. In this review, we present the various geometries that have been demonstrated to perform photoconductive NSOM (p-NSOM). We highlight a representative set of important results and discuss the implications of photocurrent imaging in macroscopic device performance.

Characterization of Uniformity and Reproducibility of Photoresist Nanomasks Fabricated by Near-Field Scanning Optical Nanolithography

2006 ◽  
Vol 6 (11) ◽  
pp. 3647-3651 ◽  
Author(s):  
Sangjin Kwon ◽  
Youngmo Jeong ◽  
Sungho Jeong
Keyword(s):  
Silicon Substrate ◽  
Near Field ◽  
Pattern Transfer ◽  
Contact Mode ◽  
Positive Photoresist ◽  
Atomic Force ◽  
Optical Nanolithography ◽  
Nanochannel Array ◽  
Near Field Scanning

The uniformity and reproducibility of the photoresist nanopatterns fabricated using near-field scanning optical nanolithography (NSOL) are investigated. The nanopatterns could be used as nanomasks for pattern transfer on a silicon wafer. In the NSOL process, uniform patterning with high reproducibility is essential for reliable transfer of the mask patterns on a silicon substrate. Using an aperture type cantilever nanoprobe operated at contact mode and a positive photoresist, various nanopatterns are produced on thin photoresist layer coated on the silicon substrate. The size and shape variations of thereby produced patterns are investigated using atomic force microscope to determine their uniformity and reproducibility. It is demonstrated that the NSOL-produced photoresist nanomasks can be successfully applied for silicon pattern transfer by fabricating a silicon nanochannel array.

Resolution and degrees of freedom in near-field scanning microscopy

1995 ◽  
Author(s):  
Guiying Wang ◽  
Zhihua Ding ◽  
Zhifeng Fan ◽  
ZhiJiang Wang
Keyword(s):  
Degrees Of Freedom ◽  
Near Field ◽  
Scanning Microscopy ◽  
Near Field Scanning

Atomic-force-regulated near-field scanning optical microscope

1992 ◽  
Author(s):  
Ricardo Toledo-Crow ◽  
Yue Chen ◽  
Mehdi Vaez-Iravani
Keyword(s):  
Near Field ◽  
Optical Microscope ◽  
Atomic Force ◽  
Near Field Scanning
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