Heating of biological tissue by laser irradiation: theoretical model

1992 ◽  
Vol 31 (7) ◽  
pp. 1417 ◽  
Author(s):  
A. M. Sagi-Dolev
1993 ◽  
Author(s):  
E. Duco Jansen ◽  
Ravi K. Chundru ◽  
Salim A. Samanani ◽  
Todd A. Tibbetts ◽  
Ashley J. Welch

1985 ◽  
Vol 5 (2) ◽  
pp. 75-82 ◽  
Author(s):  
R. Marchesini ◽  
S. Andreola ◽  
H. Emanuelli ◽  
E. Melloni ◽  
A. Schiroli ◽  
...  

1978 ◽  
Vol 17 (24) ◽  
pp. 3948 ◽  
Author(s):  
T. Halldórsson ◽  
J. Langerholc

1988 ◽  
Vol 129 ◽  
Author(s):  
Masahiro Kawasaki ◽  
Hiroyasu Sato ◽  
Gen Inoue

Pulsed laser irradiation at 248 nm can ablate Si atoms from an Si wafer. The mechanism of this photoablation has been examined by laser-induced fluorescence analysis of the Si products. The Si atoms are measured to leave the wafer surface with averaged translational energy of 2.5 kcal/mol. The distribution of translational energy is well described by the theoretical model for non-cascade ablation processes.


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